公开(公告)号：US20160336215A1

公开(公告)日：2016-11-17

申请号：US15153509

申请日：2016-05-12

Applicant: Soitec

Inventor： Sebastien Mougel ,  Didier Masselin

IPC: H01L21/762 ,  H01L21/324 ,  H01L21/66

CPC classification number: H01L21/7624 ,  H01L21/324 ,  H01L21/67248 ,  H01L21/762 ,  H01L21/76254 ,  H01L22/20 ,  H01L27/1229 ,  H01L27/1266

Abstract: A calibration method for determining temperature set point corrections to be applied to the nominal temperature set points of each of the N heating zones of a heat treatment unit having L substrate locations, includes the following steps: establishing a sensitivity model linking variations of a substrate characteristic at each of M representative locations of the L locations to temperature set point variations applied in each of the N heating zones, the variations respectively reflecting differences with respect to a target characteristic and with respect to the nominal set points; executing the process in the heat treatment unit and on the basis of nominal set points; measuring the substrate characteristic at least at a representative measurement location of each heating zone of the unit to supply M measurements; and determining temperature set point corrections from the sensitivity model, the measurements and the target substrate characteristic.

Abstract translation: 用于确定施加到具有L个衬底位置的热处理单元的每个N个加热区的标称温度设定点的温度设定点校正的校准方法包括以下步骤：建立连接衬底特性变化的灵敏度模型 在L个位置的M个代表位置中的每一个对应于在每个N个加热区域中的温度设定点变化，所述变化分别反映相对于目标特性和相对于标称设定点的差异; 在热处理单元中并基于标称设定点执行该过程; 至少在单元的每个加热区的代表性测量位置测量衬底特性以提供M测量; 并从灵敏度模型，测量和目标衬底特性中确定温度设定点校正。

公开(公告)号：US09875914B2

公开(公告)日：2018-01-23

申请号：US14898937

申请日：2014-06-11

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Christophe Gourdel ,  Carole David ,  Sebastien Mougel ,  Xavier Schneider

IPC: H01L21/00 ,  H01L21/67 ,  H01L21/762 ,  H01L21/673 ,  H01L21/02 ,  H01L21/225 ,  H01L21/687

CPC classification number: H01L21/67017 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/2255 ,  H01L21/67098 ,  H01L21/67309 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/7624

Abstract: A process comprises the following steps: a) provision of a chamber suitable for receiving a plurality of structures, b) circulation of a gas stream in the chamber so that the chamber has a non-oxidizing atmosphere, c) heat treatment of the plurality of structures at a temperature above a threshold value above which the oxygen present in an oxide of a dielectric diffuses through an active layer reacts with semiconductor material of the active layer and produces a volatile material, the process being noteworthy in that the step b) is carried out so that the gas stream has a rate of circulation between the plurality of structures greater than the rate of diffusion of the volatile material into the gas stream.

公开(公告)号：US09805969B2

公开(公告)日：2017-10-31

申请号：US15153509

申请日：2016-05-12

Applicant: Soitec

Inventor： Sebastien Mougel ,  Didier Masselin

IPC: H01L21/762 ,  H01L21/324 ,  H01L21/66 ,  H01L27/12 ,  H01L21/67

CPC classification number: H01L21/7624 ,  H01L21/324 ,  H01L21/67248 ,  H01L21/762 ,  H01L21/76254 ,  H01L22/20 ,  H01L27/1229 ,  H01L27/1266

Abstract: A calibration method for determining temperature set point corrections to be applied to the nominal temperature set points of each of the N heating zones of a heat treatment unit having L substrate locations, includes the following steps: establishing a sensitivity model linking variations of a substrate characteristic at each of M representative locations of the L locations to temperature set point variations applied in each of the N heating zones, the variations respectively reflecting differences with respect to a target characteristic and with respect to the nominal set points; executing the process in the heat treatment unit and on the basis of nominal set points; measuring the substrate characteristic at least at a representative measurement location of each heating zone of the unit to supply M measurements; and determining temperature set point corrections from the sensitivity model, the measurements and the target substrate characteristic.

公开(公告)号：US20160372342A1

公开(公告)日：2016-12-22

申请号：US14898937

申请日：2014-06-11

Applicant: SOITEC

Inventor： Didier Landru ,  Oleg Kononchuk ,  Christophe Gourdel ,  Carole David ,  Sebastien Mougel ,  Xavier Schneider

IPC: H01L21/67 ,  H01L21/762 ,  H01L21/02 ,  H01L21/687 ,  H01L21/225

CPC classification number: H01L21/67017 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/2255 ,  H01L21/67098 ,  H01L21/67309 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/7624

Abstract: A process comprises the following steps: a) provision of a chamber suitable for receiving the plurality of structures, b) circulation of a gas stream in the chamber so that the chamber has a non-oxidizing atmosphere, c) heat treatment of the plurality of structures at a temperature above a threshold value above which the oxygen present in the oxide of the dielectric diffuses through the active layer reacts with the semiconductor material of the active layer and produces a volatile material, the process being noteworthy in that the step b) is carried out so that the gas stream has a rate of circulation between the plurality of structures greater than the rate of diffusion of the volatile material into the gas stream.

Abstract translation: 一种方法包括以下步骤：a）设置适于接收多个结构的室，b）将气流循环到室中，使得室具有非氧化气氛，c）多个 高于该阈值的结构，电介质的氧化物中存在的氧扩散通过有源层与活性层的半导体材料反应并产生挥发性材料，该过程值得注意的是步骤b）是 使得气流在多个结构之间的循环速率大于挥发性物质扩散到气流中的速率。