Light emitting diode with low refractive index material layers to reduce light guiding effects

    公开(公告)号:US10096755B2

    公开(公告)日:2018-10-09

    申请号:US15051326

    申请日:2016-02-23

    Applicant: SORAA, INC.

    Abstract: A light-emitting diode (LED) for emitting emitted light having a particular wavelength, said LED comprising: (a) at least one n-doped layer; (b) at least one p-doped layer; (c) an active region comprising at least one layer of light-emitting material disposed between said at least one n-doped layer and said at least one p-doped layer, said active region having an average refractive index, calculated by averaging the LED's refractive index across the thickness of the active region; and (d) at least one low refractive index layer disposed within said particular wavelength of said active region, said at least one low refractive index layer having a refractive index below said average refractive index and a thickness sufficient to limit light being emitted into a guided mode of said active region to no more than 10% of said emitted light.

    Light emitting diodes with low refractive index material layers to reduce light guiding effects
    3.
    发明授权
    Light emitting diodes with low refractive index material layers to reduce light guiding effects 有权
    具有低折射率材料层的发光二极管,以减少导光效果

    公开(公告)号:US09269876B2

    公开(公告)日:2016-02-23

    申请号:US13787582

    申请日:2013-03-06

    Applicant: SORAA, INC.

    Abstract: Light emitting diodes including low refractive index layers for reducing guided light are disclosed. The light-emitting diodes include at least one n-doped layer, at least one p-doped layer, and an active region disposed between the at least one n-doped layer and the at least one p-doped layer. The active region comprises a light-emitting material. The light-emitting diode further comprises at least one low refractive index layer disposed in or around the active region.

    Abstract translation: 公开了包括用于减少引导光的低折射率层的发光二极管。 发光二极管包括至少一个n掺杂层,至少一个p掺杂层和设置在该至少一个n掺杂层和该至少一个p掺杂层之间的有源区。 有源区包括发光材料。 发光二极管还包括设置在有源区域中或周围的至少一个低折射率层。

Patent Agency Ranking