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    PHYSICALLY UNCLONABLE FUNCTION DEVICE
    1.
    发明申请
    PHYSICALLY UNCLONABLE FUNCTION DEVICE 有权

    公开(公告)号：US20220321124A1

    公开(公告)日：2022-10-06

    申请号：US17846362

    申请日：2022-06-22

    Applicant: STMicroelectronics (Rousset) SAS

    Inventor： Nicolas Borrel ,  Jimmy Fort ,  Mathieu Lisart

    IPC: H03K19/003 ,  H03F3/45 ,  H03K19/00 ,  H03K19/17736 ,  H03L7/097

    Abstract: A physically unclonable function device includes a set of diode-connected MOS transistors having a random distribution of respective threshold voltages. A first circuit is configured to impose, on each first transistor, a fixed respective gate voltage regardless of the value of a current flowing in this first transistor. A second circuit is configured to impose, on each second transistor, a fixed respective gate voltage regardless of the value of a current flowing in this second transistor. A current mirror stage is coupled between the first circuit and the second circuit and is configured to deliver the reference current from a sum of the currents flowing in the first transistors. A comparator is configured to deliver a signal whose level depends on a comparison between a first current obtained from a reference current based on the first transistors and a second current of the second transistors.

    Integrated circuit provided with decoys against reverse engineering and corresponding fabrication process
    2.
    发明授权
    Integrated circuit provided with decoys against reverse engineering and corresponding fabrication process 有权

    公开(公告)号：US11069628B2

    公开(公告)日：2021-07-20

    申请号：US16292958

    申请日：2019-03-05

    Applicant: STMicroelectronics (Rousset) SAS

    Inventor： Abderrezak Marzaki ,  Mathieu Lisart

    IPC: H01L23/02 ,  H01L23/00 ,  G06F21/87 ,  H04N19/44 ,  H01L27/02 ,  G06F21/75

    Abstract: An integrated circuit includes a first domain supplied with power at a first supply voltage. A first transistor comprising in the first domain includes a first gate region and a first gate dielectric region. A second domain is supply with power at a second supply voltage and includes a second transistor having a second gate region and a second gate dielectric region, the second gate region being biased at a voltage that is higher than the first supply voltage. The first and second gate dielectric regions have the same composition, wherein that composition configures the first transistor in a permanently turned off condition in response to a gate bias voltage lower than or equal to the first supply voltage. The second transistor is a floating gate memory cell transistor, with the second gate dielectric region located between the floating and control gates.

    Protected electronic integrated circuit chip
    3.
    发明授权
    Protected electronic integrated circuit chip 有权

    公开(公告)号：US10950559B2

    公开(公告)日：2021-03-16

    申请号：US16436747

    申请日：2019-06-10

    Applicant: STMicroelectronics (Rousset) SAS ,  STMicroelectronics (Research & Development) Limited

    Inventor： Mathieu Lisart ,  Bruce Rae

    IPC: H01L23/58 ,  H01L23/00

    Abstract: An electronic integrated circuit chip includes a semiconductor substrate with a front side and a back side. A first reflective shield is positioned adjacent the front side of the semiconductor substrate and a second reflective shield is positioned adjacent the back side of the semiconductor substrate. Photons are emitted by a photon source to pass through the semiconductor substrate and bounce off the first and second reflective shields to reach a photon detector at the front side of the semiconductor substrate. The detected photons are processed in order to determine whether to issue an alert indicating the existence of an attack on the electronic integrated circuit chip.

    Electromagnetic pulse detection
    8.
    发明授权
    Electromagnetic pulse detection 有权

    公开(公告)号：US11531049B2

    公开(公告)日：2022-12-20

    申请号：US17322140

    申请日：2021-05-17

    Applicant: STMicroelectronics (Rousset) SAS

    Inventor： Clement Champeix ,  Mathieu Dumont ,  Nicolas Borrel ,  Mathieu Lisart

    IPC: G01R29/08 ,  G06F21/55 ,  G06F21/75 ,  H01L23/00 ,  H01L23/66

    Abstract: An embodiment integrated circuit includes a first electromagnetic pulse detection device that comprises a first loop antenna formed in an interconnection structure of the integrated circuit, a first end of the first antenna being connected to a first node of application of a power supply potential and a second end of the antenna being coupled to a second node of application of the power supply potential, and a first circuit connected to the second end of the first antenna and configured to output a first signal representative of a comparison of a first current in the first antenna with a first threshold.

    Protected electronic integrated circuit chip
    9.
    发明授权
    Protected electronic integrated circuit chip 有权

    公开(公告)号：US11387197B2

    公开(公告)日：2022-07-12

    申请号：US17166156

    申请日：2021-02-03

    Applicant: STMicroelectronics (Rousset) SAS ,  STMicroelectronics (Research & Development) Limited

    Inventor： Mathieu Lisart ,  Bruce Rae

    IPC: H01L23/00

    Abstract: An electronic integrated circuit chip includes a semiconductor substrate with a front side and a back side. A first reflective shield is positioned adjacent the front side of the semiconductor substrate and a second reflective shield is positioned adjacent the back side of the semiconductor substrate. Photons are emitted by a photon source to pass through the semiconductor substrate and bounce off the first and second reflective shields to reach a photon detector at the front side of the semiconductor substrate. The detected photons are processed in order to determine whether to issue an alert indicating the existence of an attack on the electronic integrated circuit chip.

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