公开(公告)号：US12134556B2

公开(公告)日：2024-11-05

申请号：US17534286

申请日：2021-11-23

Applicant: STMICROELECTRONICS S.R.L. ,  STMicroelectronics International N.V.

Inventor： Enri Duqi ,  Lorenzo Baldo ,  Paolo Ferrari ,  Benedetto Vigna ,  Flavio Francesco Villa ,  Laura Maria Castoldi ,  Ilaria Gelmi

IPC: B81B7/00

Abstract: A semiconductor device includes: a substrate; a transduction microstructure integrated in the substrate; a cap joined to the substrate and having a first face adjacent to the substrate and a second, outer, face; and a channel extending through the cap from the second face to the first face and communicating with the transduction microstructure. A protective membrane made of porous polycrystalline silicon permeable to aeriform substances is set across the channel.

公开(公告)号：US20170313582A1

公开(公告)日：2017-11-02

申请号：US15651444

申请日：2017-07-17

Applicant: STMicroelectronics S.r.l.

Inventor： Matteo Perletti ,  Pietro Petruzza ,  Ilaria Gelmi ,  Laura Maria Castoldi

IPC: B81C1/00

CPC classification number: B81C1/00888 ,  B81B2201/0257 ,  B81B2207/012

Abstract: A transducer includes a first substrate and an integrated circuit coupled to the first substrate. A sensor is electrically coupled to the integrated circuit and includes a second substrate having a first surface and a second surface opposite the first surface. The second substrate has scribe boundaries defining an outer edge of the second substrate and a chamber extending from the first surface towards but not reaching the second surface. A chamber extends from the second surface to meet the chamber from first surface. Scribe trenches in the second surface at the scribe boundaries have a width from the scribe boundary towards the chamber extending from the second surface. A membrane extends over the first surface and over the chamber extending from first surface. A plate extends from the first surface of the second substrate over the membrane.

公开(公告)号：US10322931B2

公开(公告)日：2019-06-18

申请号：US15651444

申请日：2017-07-17

Applicant: STMicroelectronics S.r.l.

Inventor： Matteo Perletti ,  Pietro Petruzza ,  Ilaria Gelmi ,  Laura Maria Castoldi

IPC: B81C1/00

Abstract: A transducer includes a first substrate and an integrated circuit coupled to the first substrate. A sensor is electrically coupled to the integrated circuit and includes a second substrate having a first surface and a second surface opposite the first surface. The second substrate has scribe boundaries defining an outer edge of the second substrate and a chamber extending from the first surface towards but not reaching the second surface. A chamber extends from the second surface to meet the chamber from first surface. Scribe trenches in the second surface at the scribe boundaries have a width from the scribe boundary towards the chamber extending from the second surface. A membrane extends over the first surface and over the chamber extending from first surface. A plate extends from the first surface of the second substrate over the membrane.

公开(公告)号：US09731965B1

公开(公告)日：2017-08-15

申请号：US15087732

申请日：2016-03-31

Applicant: STMicroelectronics S.R.L.

Inventor： Matteo Perletti ,  Pietro Petruzza ,  Ilaria Gelmi ,  Laura Maria Castoldi

IPC: B81C1/00

CPC classification number: B81C1/00888 ,  B81B2201/0257 ,  B81B2207/012

Abstract: A method of forming semiconductor devices, such as capacitive type MEMS acoustic transducers, in a semiconductor includes forming a mask layer on a back surface of the semiconductor wafer and removing first etch portions of the mask layer and scribe trench portions of the mask layer. Each scribe trench portion is positioned in the mask layer to define a corresponding scribe boundary of a plurality of the semiconductor devices being formed in the semiconductor wafer. Etching the semiconductor wafer through the first etch portions and the scribe trench portions may be done simultaneously to form external back chambers and scribe trenches, respectively, in the semiconductor wafer. The semiconductor wafer is then cut along cutting lines in the scribe trenches to singulate individual MEMS acoustic transducers. The etching through the first and second etch portions and the scribe trench portions are dry etching of the semiconductor substrate in one embodiment.

公开(公告)号：US11945712B2

公开(公告)日：2024-04-02

申请号：US17320993

申请日：2021-05-14

Applicant: STMicroelectronics S.r.l.

Inventor： Giorgio Allegato ,  Lorenzo Corso ,  Ilaria Gelmi ,  Carlo Valzasina

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0051 ,  B81C1/00595 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C2201/0198

Abstract: A process for manufacturing a MEMS device includes forming a first structural layer of a first thickness on a substrate. First trenches are formed through the first structural layer, and masking regions separated by first openings are formed on the first structural layer. A second structural layer of a second thickness is formed on the first structural layer in direct contact with the first structural layer at the first openings and forms, together with the first structural layer, thick structural regions having a third thickness equal to the sum of the first and the second thicknesses. A plurality of second trenches are formed through the second structural layer, over the masking regions, and third trenches are formed through the first and the second structural layers by removing selective portions of the thick structural regions.