Micro-electro-mechanical device having two buried cavities and manufacturing process thereof

    公开(公告)号:US10676347B2

    公开(公告)日:2020-06-09

    申请号:US15866380

    申请日:2018-01-09

    Abstract: A micro-electro-mechanical device, comprising a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region facing the first buried cavity; a second cavity facing the first buried cavity; a decoupling trench extending from the monolithic body and separating the sensitive region from a peripheral portion of the monolithic body; a cap die, forming an ASIC, bonded to and facing the first face of the monolithic body; and a first gap between the cap die and the monolithic body. The device also comprises at least one spacer element between the monolithic body and the cap die; at least one stopper element between the monolithic body and the cap die; and a second gap between the stopper element and one between the monolithic body and the cap die. The second gap is smaller than the first gap.

    Process for manufacturing a MEMS pressure sensor, and corresponding MEMS pressure sensor

    公开(公告)号:US10578505B2

    公开(公告)日:2020-03-03

    申请号:US15958461

    申请日:2018-04-20

    Abstract: A process for manufacturing a MEMS pressure sensor having a micromechanical structure envisages: providing a wafer having a substrate of semiconductor material and a top surface; forming a buried cavity entirely contained within the substrate and separated from the top surface by a membrane suspended above the buried cavity; forming a fluidic-communication access for fluidic communication of the membrane with an external environment, set at a pressure the value of which has to be determined; forming, suspended above the membrane, a plate made of polysilicon, separated from the membrane by an empty space; and forming electrical-contact elements for electrical connection of the membrane and of the plate, which are designed to form the plates of a sensing capacitor, the value of capacitance of which is indicative of the value of pressure to be detected. A corresponding MEMS pressure sensor having the micromechanical structure is moreover described.

    INTEGRATED TRIAXIAL MAGNETOMETER OF SEMICONDUCTOR MATERIAL MANUFACTURED IN MEMS TECHNOLOGY
    9.
    发明申请
    INTEGRATED TRIAXIAL MAGNETOMETER OF SEMICONDUCTOR MATERIAL MANUFACTURED IN MEMS TECHNOLOGY 有权
    MEMS技术制造的半导体材料的集成三光子计

    公开(公告)号:US20140077798A1

    公开(公告)日:2014-03-20

    申请号:US13905006

    申请日:2013-05-29

    CPC classification number: G01R33/0286 G01R33/0005 G01R33/028 G01R33/038

    Abstract: Two suspended masses are configured so as to be flowed by respective currents flowing in the magnetometer plane in mutually transversal directions and are capacitively coupled to lower electrodes. Mobile sensing electrodes are carried by the first suspended mass and are capacitively coupled to respective fixed sensing electrodes. The first suspended mass is configured so as to be mobile in a direction transversal to the plane in presence of a magnetic field having a component in a first horizontal direction. The second suspended mass is configured so as to be mobile in a direction transversal to the plane in presence of a magnetic field having a component in a second horizontal direction, and the first suspended mass is configured so as to be mobile in a direction parallel to the plane and transversal to the current flowing in the first suspended mass in presence of a magnetic field having a component in a vertical direction.

    Abstract translation: 两个悬挂质量被配置为使得在相互横向上在磁力计平面中流动的相应电流流动,并且电容耦合到下电极。 移动感测电极由第一悬浮质量携带并且电容耦合到相应的固定感测电极。 第一悬挂质量被配置为在存在具有在第一水平方向上的分量的磁场的情况下在横向于平面的方向上是可移动的。 第二悬挂质量被配置为在存在具有在第二水平方向上的分量的磁场的情况下在横向于平面的方向上是可移动的,并且第一悬挂质量被配置为在平行于 并且在存在具有在垂直方向上的分量的磁场的情况下横向于在第一悬浮质量块中流动的电流。

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