公开(公告)号：US08907427B2

公开(公告)日：2014-12-09

申请号：US13668376

申请日：2012-11-05

Applicant: STMicroelectronics, Inc

Inventor： John H Zhang

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC classification number: H01L21/823807 ,  H01L21/823842 ,  H01L29/1054 ,  H01L29/4232 ,  H01L29/517 ,  H01L29/66621 ,  H01L29/66651 ,  H01L29/7833

Abstract: A semiconductor device may include a substrate, source and drain regions in the substrate, a recessed epitaxial channel layer in the substrate between the source and drain regions, and a high-K gate dielectric layer overlying the recessed epitaxial channel layer. The semiconductor device may further include a gate electrode overlying the high-K gate dielectric layer, a dielectric cap layer in contact with top and sidewall portions of the gate electrode, the dielectric cap layer having a lower dielectric constant than the high-K gate dielectric layer, and source and drain contacts coupled to the source and drain regions.

Abstract translation: 半导体器件可以包括衬底，衬底中的源极和漏极区域，在源极和漏极区域之间的衬底中的凹陷的外延沟道层以及覆盖凹陷的外延沟道层的高K栅极电介质层。 半导体器件还可以包括覆盖高K栅极电介质层的栅电极，与栅电极的顶部和侧壁部分接触的电介质盖层，介电覆盖层具有比高K栅极电介质低的介电常数 层，以及耦合到源极和漏极区域的源极和漏极接触。

公开(公告)号：US11622707B2

公开(公告)日：2023-04-11

申请号：US16041140

申请日：2018-07-20

Applicant: STMicroelectronics, Inc.

Inventor： John H Zhang

IPC: A61B5/05 ,  H01L27/00 ,  A61B5/24 ,  A61B5/00 ,  G01N27/414 ,  B82Y30/00

Abstract: It is recognized that, because of its unique properties, graphene can serve as an interface with biological cells that communicate by an electrical impulse, or action potential. Responding to a sensed signal can be accomplished by coupling a graphene sensor to a low power digital electronic switch that is activatable by the sensed low power electrical signals. It is further recognized that low power devices such as tunneling diodes and TFETs are suitable for use in such biological applications in conjunction with graphene sensors. While tunneling diodes can be used in diagnostic applications, TFETs, which are three-terminal devices, further permit controlling the voltage on one cell according to signals received by other cells. Thus, by the use of a biological sensor system that includes graphene nanowire sensors coupled to a TFET, charge can be redistributed among different biological cells, potentially with therapeutic effects.

公开(公告)号：US09305997B1

公开(公告)日：2016-04-05

申请号：US14574855

申请日：2014-12-18

Applicant: STMICROELECTRONICS, INC.

Inventor： John H Zhang

IPC: H01L21/20 ,  H01L49/02 ,  H01L23/522 ,  H01L21/768

CPC classification number: H01L23/528 ,  H01L21/76802 ,  H01L21/76805 ,  H01L21/76816 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/5222 ,  H01L23/5223 ,  H01L23/5226 ,  H01L23/5228 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L27/0676 ,  H01L27/0682 ,  H01L27/0802 ,  H01L28/20 ,  H01L28/24 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for making a semiconductor device may include forming a first dielectric layer above a semiconductor substrate, forming a first trench in the first dielectric layer, filling the first trench with electrically conductive material, removing upper portions of the electrically conductive material to define a lower conductive member with a recess thereabove, forming a filler dielectric material in the recess to define a second trench. The method may further include filling the second trench with electrically conductive material to define an upper conductive member, forming a second dielectric layer over the first dielectric layer and upper conductive member, forming a first via through the second dielectric layer and underlying filler dielectric material to the lower conductive member, and forming a second via through the second dielectric layer to the upper conductive member.