公开(公告)号：US20190086519A1

公开(公告)日：2019-03-21

申请号：US16194985

申请日：2018-11-19

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois Roy ,  Boris Rodrigues Goncalves ,  Marie Guillon ,  Yvon Cazaux ,  Benoit Giffard

IPC: G01S7/486 ,  H01L27/146 ,  G01S7/491 ,  H04N5/374

Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas.

公开(公告)号：US09917124B2

公开(公告)日：2018-03-13

申请号：US14919836

申请日：2015-10-22

Applicant: Commissariat à l'Energie Atomique et aux Energies Alternatives ,  STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics (GRENOBLE 2) SAS

Inventor： Yvon Cazaux ,  François Roy ,  Arnaud Laflaquiere ,  Marie Guillon

IPC: H01L27/146 ,  H01L27/148 ,  H01L27/12

CPC classification number: H01L27/14636 ,  H01L27/1203 ,  H01L27/14605 ,  H01L27/14614 ,  H01L27/1463

Abstract: An image sensor arranged inside and on top of a semi-conductor substrate having a front surface and a rear surface, the sensor including a plurality of pixels, each including: a photosensitive area, a reading area, and a storage area extending between the photosensitive area and the reading area; a vertical insulated electrode including an opening of transfer between the photosensitive area and the storage area; and at least one insulation element among the following: a) a layer of an insulating material extending under the surface of the photosensitive area and of the storage area and having its front surface in contact with the rear surface of the electrode; and b) an insulating wall extending vertically in the opening, or under the opening.

公开(公告)号：US10170513B2

公开(公告)日：2019-01-01

申请号：US15713639

申请日：2017-09-23

Applicant: Commissariat à l'Energie Atomique et aux Energies Alternatives ,  STMICROELECTRONICS (CROLLES 2) SAS ,  STMICROELECTRONICS (GRENOBLE 2) SAS

Inventor： Yvon Cazaux ,  François Roy ,  Marie Guillon ,  Arnaud Laflaquiere

IPC: H01L27/146 ,  H01L27/12

Abstract: An image sensor arranged inside and on top of a semi-conductor substrate having a front surface and a rear surface, the sensor including a plurality of pixels, each including: a photosensitive area, a reading area, and a storage area extending between the photosensitive area and the reading area; a vertical insulated electrode including an opening of transfer between the photosensitive area and the storage area; and at least one insulation element among the following: a) a layer of an insulating material extending under the surface of the photosensitive area and of the storage area and having its front surface in contact with the rear surface of the electrode; and b) an insulating wall extending vertically in the opening, or under the opening.

公开(公告)号：US10162048B2

公开(公告)日：2018-12-25

申请号：US15392032

申请日：2016-12-28

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois Roy ,  Boris Rodrigues ,  Marie Guillon ,  Yvon Cazaux ,  Benoit Giffard

IPC: G01S7/48 ,  H01L27/146 ,  H04N5/374 ,  G01S7/491 ,  G01S7/486

Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas.

公开(公告)号：US20170194368A1

公开(公告)日：2017-07-06

申请号：US15392032

申请日：2016-12-28

Applicant: STMicroelectronics (Crolles 2) SAS ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Francois Roy ,  Boris Rodrigues ,  Marie Guillon ,  Yvon Cazaux ,  Benoit Giffard

IPC: H01L27/146 ,  H04N5/374

CPC classification number: G01S7/4863 ,  G01S7/4914 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14625 ,  H01L27/1463 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14683 ,  H04N5/374

Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas.

公开(公告)号：US20170192090A1

公开(公告)日：2017-07-06

申请号：US15387883

申请日：2016-12-22

Applicant: STMicroelectronics (Crolles 2) SAS ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Francois Roy ,  Marie Guillon ,  Yvon Cazaux ,  Boris Rodrigues ,  Alexis Rochas

IPC: G01S7/486 ,  H01L27/146

CPC classification number: G01S7/4863 ,  G01S7/4914 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14625 ,  H01L27/1463 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14683 ,  H04N5/374

Abstract: A time-of-flight detection pixel includes a photosensitive area including a first doped layer and a charge collection area extending in the first doped layer. At least two charge storage areas extend from the charge collection area, each including a first well more heavily doped than the charge collection area and separated from the charge collection area by a first portion of the first doped layer which is coated with a gate. Each charge storage area is laterally delimited by two insulated conductive electrodes, extending parallel to each other and facing each other. A second heavily doped layer of opposite conductivity coats the pixel except for at each portion of the first doped layer coated with the gate.