公开(公告)号：US20220005850A1

公开(公告)日：2022-01-06

申请号：US17363345

申请日：2021-06-30

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Alain INARD ,  Marios BARLAS

IPC: H01L27/146 ,  H01L31/0232

Abstract: An optoelectronic device includes a photodiode. At least a portion of an active area of the photodiode is separated from a neighboring photodiode by a first wall including a conductive core and an insulating sheath and by a second optical insulation wall. The first wall and second optical insulation wall further extend parallel to each other and separate the active area from a memory area of the photodiode.

公开(公告)号：US20230290570A1

公开(公告)日：2023-09-14

申请号：US18176190

申请日：2023-02-28

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Marios BARLAS ,  Yannick LE FRIEC ,  Xavier FEDERSPIEL

IPC: H01G4/008 ,  H01G4/33 ,  H01G4/30 ,  H01G4/012 ,  H01G4/228

CPC classification number: H01G4/008 ,  H01G4/012 ,  H01G4/228 ,  H01G4/306 ,  H01G4/33

Abstract: A device includes a first layer, having a copper track located therein. The first layer is covered with a second layer including a cavity. The cavity exposes at least a portion of the track. The portion is covered with a third layer of titanium nitride doped with silicon.

公开(公告)号：US20220085084A1

公开(公告)日：2022-03-17

申请号：US17471049

申请日：2021-09-09

Applicant: STMICROELECTRONICS (RESEARCH & DEVELOPMENT) LIMITED ,  STMicroelectronics (Crolles 2) SAS

Inventor： Raul Andres BIANCHI ,  Marios BARLAS ,  Alexandre LOPEZ ,  Bastien MAMDY ,  Bruce RAE ,  Isobel NICHOLSON

IPC: H01L27/146

Abstract: The present disclosure relates to a pixel comprising: a photodiode comprising a portion of a substrate of a semiconductor material, extending vertically from a first face of the substrate to a second face of the substrate configured to receive light; a layer of a first material covering each of the lateral surfaces of the portion; a layer of a second material covering the portion on the side of the first face, first and second material having refractive indexes lower than that of the semiconductor material; and a diffractive structure disposed on a face of the photodiode on the side of the second face.

公开(公告)号：US20240339464A1

公开(公告)日：2024-10-10

申请号：US18744359

申请日：2024-06-14

Applicant: STMICROELECTRONICS (RESEARCH & DEVELOPMENT) LIMITED ,  STMicroelectronics (Crolles 2) SAS

Inventor： Raul Andres BIANCHI ,  Marios BARLAS ,  Alexandre LOPEZ ,  Bastien MAMDY ,  Bruce RAE ,  Isobel NICHOLSON

IPC: H01L27/146 ,  G02B5/18

CPC classification number: H01L27/14605 ,  H01L27/1462 ,  G02B5/18 ,  G02B5/1814 ,  G02B5/1819 ,  G02B5/1828 ,  G02B5/1842 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/1464

Abstract: The present disclosure relates to a pixel comprising: a photodiode comprising a portion of a substrate of a semiconductor material, extending vertically from a first face of the substrate to a second face of the substrate configured to receive light; a layer of a first material covering each of the lateral surfaces of the portion; a layer of a second material covering the portion on the side of the first face, first and second material having refractive indexes lower than that of the semiconductor material; and a diffractive structure disposed on a face of the photodiode on the side of the second face.

公开(公告)号：US20230335566A1

公开(公告)日：2023-10-19

申请号：US18175360

申请日：2023-02-27

Applicant: STMicroelectronics (Crolles 2) SAS ,  COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Marios BARLAS ,  Quentin ABADIE

IPC: H01L27/146

CPC classification number: H01L27/1461 ,  H01L27/14643 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14689 ,  G01S7/4816

Abstract: The present description concerns a manufacturing method comprising, for each photodetector of an array of photodetectors of a light sensor, a use of a mask obtained by directed self-assembly of a block copolymer to form, by a first etch step, at least one first structure on the side of a first surface of the photodetector intended to receive light.

公开(公告)号：US20230290813A1

公开(公告)日：2023-09-14

申请号：US18178333

申请日：2023-03-03

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Marios BARLAS

IPC: H01L27/08

CPC classification number: H01L28/60 ,  H01L27/0805

Abstract: A device includes at least one capacitor. The capacitor includes an assembly of two metal pads and at least two metal plates, each plate extending at least from one pad to the other, a first insulating layer conformally covering said assembly, a second conductive layer conformally covering the first layer.

公开(公告)号：US20230178479A1

公开(公告)日：2023-06-08

申请号：US18075087

申请日：2022-12-05

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Marios BARLAS ,  Pascal GOURAUD

IPC: H01L23/522 ,  H01L21/768

CPC classification number: H01L23/5226 ,  H01L21/76834 ,  H01L21/76897

Abstract: A method is presented for manufacturing an insulated conductive via. The via crosses a first stack of layers to reach a first layer. A first cavity is formed partially extending into the first stack of layers. A second stack of layers is formed over the first stack of layers and in the first cavity. The second stack of layers includes an etch stop layer and an insulating layer. A second cavity is then formed extending completely through first and second stacks of layers to reach the first layer. An insulating liner then covers the walls and bottom of the second cavity. The insulating liner is then anisotropically etched, and the second cavity is filled by a conductive material forming the core of the via.