公开(公告)号：US20230290786A1

公开(公告)日：2023-09-14

申请号：US18118391

申请日：2023-03-07

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Sebastien CREMER ,  Frederic MONSIEUR ,  Alain FLEURY ,  Sebastien HAENDLER

IPC: H01L27/12 ,  H01L21/762 ,  H01L23/48 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L27/1203 ,  H01L21/76264 ,  H01L23/481 ,  H01L23/528 ,  H01L23/53257

Abstract: A device includes an active semiconductor layer on top of and in contact with an insulating layer which overlies a semiconductor substrate. A transistor for the device includes a source region, a drain region, and a body region arranged in the active semiconductor layer. The body region of the transistor is electrically coupled to the semiconductor substrate using a conductive via that crosses through the insulating layer.

公开(公告)号：US20220013681A1

公开(公告)日：2022-01-13

申请号：US17486219

申请日：2021-09-27

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Charles BAUDOT ,  Sebastien CREMER ,  Nathalie VULLIET ,  Denis PELLISSIER-TANON

IPC: H01L31/109 ,  H01L31/18 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/105

Abstract: A photodiode includes an active area formed by intrinsic germanium. The active area is located within a cavity formed in a silicon layer. The cavity is defined by opposed side walls which are angled relative to a direction perpendicular to a bottom surface of the silicon layer. The angled side walls support epitaxial growth of the intrinsic germanium with minimal lattice defects.

公开(公告)号：US20210257507A1

公开(公告)日：2021-08-19

申请号：US17308651

申请日：2021-05-05

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Charles BAUDOT ,  Sebastien CREMER ,  Nathalie VULLIET ,  Denis PELLISSIER-TANON

IPC: H01L31/105 ,  H01L31/0232 ,  G02B6/12 ,  H01L31/028

Abstract: A vertical photodiode includes an active area. The contacting pads for the diode terminals are laterally shifted away from the active area so as to not be located above or below the active area. The active area is formed in a layer of semiconductor material by a lower portion of a germanium area that is intrinsic and an upper portion of the germanium area that is doped with a first conductivity type. The vertical photodiode is optically coupled to a waveguide formed in the layer of semiconductor material.

公开(公告)号：US20240097030A1

公开(公告)日：2024-03-21

申请号：US18190893

申请日：2023-03-27

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  STMicroelectronics (Crolles 2) SAS

Inventor： Sebastien CREMER ,  Tadeu MOTA FRUTUOSO ,  Xavier GARROS ,  Blandine DURIEZ

IPC: H01L29/78 ,  H01L21/265 ,  H01L21/266 ,  H01L21/84 ,  H01L27/12

CPC classification number: H01L29/7838 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/84 ,  H01L27/1203

Abstract: The present description concerns an electronic device comprising: —a silicon layer having a first surface and a second surface, —an insulating layer in contact with the first surface of the silicon layer, —at least one transistor comprising source, drain, and body regions arranged in the silicon layer, and a gate region topping the body region and comprising a gate portion laterally extending beyond the source and drain regions, the body region being continued by a body contact region not covered with the gate region, and a region of extension of the body region being located under the gate portion; the gate portion being less heavily doped than the rest of the gate region.

公开(公告)号：US20240096898A1

公开(公告)日：2024-03-21

申请号：US18190897

申请日：2023-03-27

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  STMicroelectronics (Crolles 2) SAS

Inventor： Tadeu MOTA FRUTUOSO ,  Xavier GARROS ,  Blandine DURIEZ ,  Sebastien CREMER

IPC: H01L27/12 ,  H01L21/84

CPC classification number: H01L27/1207 ,  H01L21/84

Abstract: The present description concerns an electronic device comprising: a silicon layer, an insulating layer in contact with a first surface of the silicon layer, a transistor comprising source, drain, and body regions arranged in the silicon layer, and a gate region topping the body region and comprising a gate portion laterally extending beyond the source and drain regions, the body region being continued by a body contact region not covered with the gate region, and a region of extension of the body region being located under the gate portion; the device further comprising, under the gate portion, a partial insulating trench in the silicon layer extending from a second surface of the silicon layer down to a depth smaller than the thickness of the silicon layer.

公开(公告)号：US20220320722A1

公开(公告)日：2022-10-06

申请号：US17701340

申请日：2022-03-22

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Sebastien CREMER

IPC: H01Q1/38 ,  H01Q1/22 ,  H01Q1/00

Abstract: The present disclosure relates to a method of making an electronic device comprising a first wafer including at least one trench and a second wafer, the second wafer being bonded, by hybrid bonding, to the first wafer, so as to form, at the level of the trench, at least one enclosed space, empty or gas-filled.

公开(公告)号：US20190280146A1

公开(公告)日：2019-09-12

申请号：US16294645

申请日：2019-03-06

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Charles BAUDOT ,  Sebastien CREMER ,  Nathalie VULLIET ,  Denis PELLISSIER-TANON

IPC: H01L31/109 ,  H01L31/028 ,  H01L31/0232 ,  H01L31/18

Abstract: A photodiode includes an active area formed by intrinsic germanium. The active area is located within a cavity formed in a silicon layer. The cavity is defined by opposed side walls which are angled relative to a direction perpendicular to a bottom surface of the silicon layer. The angled side walls support epitaxial growth of the intrinsic germanium with minimal lattice defects.

公开(公告)号：US20190280144A1

公开(公告)日：2019-09-12

申请号：US16292525

申请日：2019-03-05

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Charles BAUDOT ,  Sebastien CREMER ,  Nathalie VULLIET ,  Denis PELLISSIER-TANON

IPC: H01L31/105 ,  G02B6/12 ,  H01L31/0232

Abstract: A vertical photodiode includes an active area. The contacting pads for the diode terminals are laterally shifted away from the active area so as to not be located above or below the active area. The active area is formed in a layer of semiconductor material by a lower portion of a germanium area that is intrinsic and an upper portion of the germanium area that is doped with a first conductivity type. The vertical photodiode is optically coupled to a waveguide formed in the layer of semiconductor material.