Abstract:
An X-ray detector includes a first circuit with an NPN-type bipolar transistor and a second circuit configured to compare a voltage at a terminal of the NPN-type bipolar transistor with a reference value substantially equal to a value of the terminal voltage which would occur when the first circuit has been exposed to a threshold quantity of X-rays.
Abstract:
The generation of a Hall voltage within a semiconductor film of an integrated Hall effect sensor uses the flow of a current within the semiconductor film when subjected to a magnetic field. The film is disposed on top of an insulating layer, referred to as buried layer, which is itself disposed on top of a carrier substrate containing a buried electrode that is situated under the insulating layer. A biasing voltage is applied to the buried electrode.
Abstract:
A voltage or current generator has a configurable temperature coefficient and includes a first voltage generator that generates a first voltage having a first negative temperature coefficient. A second voltage generator generates a second voltage having a second negative temperature coefficient different to the first negative temperature coefficient. A circuit generates an output level based on the difference between the first voltage scaled by a first scale factor and the second voltage scaled by a second scale factor.
Abstract:
A voltage or current generator has a configurable temperature coefficient and includes a first voltage generator that generates a first voltage having a first negative temperature coefficient. A second voltage generator generates a second voltage having a second negative temperature coefficient different to the first negative temperature coefficient. A circuit generates an output level based on the difference between the first voltage scaled by a first scale factor and the second voltage scaled by a second scale factor.
Abstract:
A chain of switches is connected between a first power supply line coupled to a first voltage and a second power supply line coupled to the sector. These switches are controllable by a control signal. The control signal is propagated from a first end of the first chain towards a second end of the first chain without control of the switches during this first propagation. The control signal is then propagated in the reverse direction from the second end towards the first end with a control of the switches during this second propagation starting from a group of at least one switch situated at the second end. There is a detection of the arrival of the control signal at the first end of the chain at the end of its propagation in the reverse direction.
Abstract:
A switched-mode power converter device includes an inductive element coupling a first node receiving an input voltage to a second node. A first transistor couples the second node to a third node generating an output voltage. A control circuit includes a first switch coupling the third node to a control terminal of the first transistor.
Abstract:
A chain of switches is connected between a first power supply line coupled to a first voltage and a second power supply line coupled to the sector. These switches are controllable by a control signal. The control signal is propagated from a first end of the first chain towards a second end of the first chain without control of the switches during this first propagation. The control signal is then propagated in the reverse direction from the second end towards the first end with a control of the switches during this second propagation starting from a group of at least one switch situated at the second end. There is a detection of the arrival of the control signal at the first end of the chain at the end of its propagation in the reverse direction.
Abstract:
The generation of a Hall voltage within a semiconductor film of an integrated Hall effect sensor uses the flow of a current within the semiconductor film when subjected to a magnetic field. The film is disposed on top of an insulating layer, referred to as buried layer, which is itself disposed on top of a carrier substrate containing a buried electrode that is situated under the insulating layer. A biasing voltage is applied to the buried electrode.