公开(公告)号：US20140370373A1

公开(公告)日：2014-12-18

申请号：US14475018

申请日：2014-09-02

Applicant: STMicroelectronics (Tours) SAS

Inventor： Patrick Hougron

IPC: B29C45/14 ,  B29D99/00 ,  H01M2/02

CPC classification number: B29C45/14336 ,  B29D99/0053 ,  B29L2031/3468 ,  H01M2/0207 ,  H01M2/0212 ,  H01M2/0215 ,  H01M2/026 ,  H01M2/0267 ,  H01M2/027 ,  H01M2/0275 ,  H01M2/0277 ,  H01M2/0404 ,  H01M10/0404 ,  H01M10/0436 ,  H01M2220/30

Abstract: A method for encapsulating a device, such as an battery, having two opposite and parallel main faces and a peripheral edge, wherein one main face includes an electrical contact zone, includes the steps of retaining the device within an injection chamber of a mold and injecting encapsulation material into the injection chamber to overmold an encapsulation block on the device. The injection chamber is configured to hold a portion of the device, adjacent its peripheral edge, so as to center the device within the injection chamber. The mold includes centering structures that at least partially cover the electrical contact zone. Opposite positioning studs protrude into the injection chamber and bear on the opposite main faces of the device. The resulting packaged device includes an overmolded encapsulation block enveloping the device except for portions covered by the centering structure.

Abstract translation: 一种用于封装诸如电池的装置的方法，其具有两个相对并且平行的主面和周边边缘，其中一个主面包括电接触区，包括以下步骤：将所述装置保持在模具的注射室内并注射 封装材料进入注射室以覆盖设备上的封装块。 注射室被构造成保持装置的一部分邻近其周边边缘，以使装置在注射室内居中。 模具包括至少部分地覆盖电接触区域的定心结构。 相对的定位柱突出到注射室中，并承载在装置的相对的主面上。 所得到的封装装置包括包覆成型的封装块，其包围该装置，除了由对中结构覆盖的部分。

公开(公告)号：US20130178017A1

公开(公告)日：2013-07-11

申请号：US13783529

申请日：2013-03-04

Applicant: STMicroelectronics (Tours) SAS

Inventor： Vincent Jarry ,  Patrick Hougron ,  Dominique Touzet ,  José Mendez

IPC: H01L21/683 ,  H01L21/78

CPC classification number: H01L21/683 ,  H01L21/67132 ,  H01L21/78 ,  Y10T29/41 ,  Y10T83/02 ,  Y10T225/393

Abstract: A method for manufacturing semiconductor chips from a semiconductor wafer, including the steps of: fastening, on a first support frame, a second support frame having outer dimensions smaller than the outer dimensions of the first frame and greater than the inner dimensions of the first frame; arranging the wafer on a surface of a film stretched on the second frame; carrying out wafer processing operations by using equipment capable of receiving the first frame; separating the second frame from the first frame and removing the first frame; and carrying out wafer processing operations by using equipment capable of receiving the second frame.

Abstract translation: 一种用于从半导体晶片制造半导体芯片的方法，包括以下步骤：在第一支撑框架上紧固外部尺寸小于第一框架的外部尺寸并大于第一框架的内部尺寸的第二支撑框架 ; 将晶片布置在在第二框架上延伸的膜的表面上; 通过使用能够接收第一帧的设备进行晶片处理操作; 将第二框架与第一框架分离并移除第一框架; 并通过使用能够接收第二帧的设备进行晶片处理操作。

公开(公告)号：US08772134B2

公开(公告)日：2014-07-08

申请号：US13783529

申请日：2013-03-04

Applicant: STMicroelectronics (Tours) SAS

Inventor： Vincent Jarry ,  Patrick Hougron ,  Dominique Touzet ,  José Mendez

IPC: H01L21/66 ,  B26D3/00

CPC classification number: H01L21/683 ,  H01L21/67132 ,  H01L21/78 ,  Y10T29/41 ,  Y10T83/02 ,  Y10T225/393

Abstract: A method for manufacturing semiconductor chips from a semiconductor wafer, including the steps of: fastening, on a first support frame, a second support frame having outer dimensions smaller than the outer dimensions of the first frame and greater than the inner dimensions of the first frame; arranging the wafer on a surface of a film stretched on the second frame; carrying out wafer processing operations by using equipment capable of receiving the first frame; separating the second frame from the first frame and removing the first frame; and carrying out wafer processing operations by using equipment capable of receiving the second frame.

Abstract translation: 一种用于从半导体晶片制造半导体芯片的方法，包括以下步骤：在第一支撑框架上紧固外部尺寸小于第一框架的外部尺寸并大于第一框架的内部尺寸的第二支撑框架 ; 将晶片布置在在第二框架上延伸的膜的表面上; 通过使用能够接收第一帧的设备进行晶片处理操作; 将第二框架与第一框架分离并移除第一框架; 并通过使用能够接收第二帧的设备进行晶片处理操作。