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公开(公告)号:US20240178178A1
公开(公告)日:2024-05-30
申请号:US18522909
申请日:2023-11-29
Applicant: STMicroelectronics International N.V.
Inventor: Francesca DE VITI , Damian HALICKI , Giovanni GRAZIOSI , Michele DERAI
CPC classification number: H01L24/24 , H01L23/3121 , H01L24/19 , H01L24/25 , H01L25/16 , H01L2224/19 , H01L2224/24195 , H01L2224/2501 , H01L2924/1205
Abstract: An integrated circuit semiconductor dice has first and second opposed surfaces. First and second electrically conductive patterns extending at the first and second opposed surfaces provide electrical coupling to the semiconductor die. An electrical component, such as a capacitor, having a length transverse to the first and second opposed surfaces of the semiconductor die, extends bridge-like between the first and second opposed surfaces. Opposed electrical contact end terminals of the electrical component are coupled to the first and second electrically conductive patterns. The electrical component is thus electrically coupled to the semiconductor die via the first and second electrically conductive patterns at the first and second opposed surfaces.
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2.
公开(公告)号:US20240332033A1
公开(公告)日:2024-10-03
申请号:US18614936
申请日:2024-03-25
Applicant: STMicroelectronics International N.V.
Inventor: Michele DERAI , Guendalina CATALANO
CPC classification number: H01L21/561 , H01L21/78 , H01L23/3171 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/94 , H01L24/04 , H01L2224/0345 , H01L2224/03912 , H01L2224/0401 , H01L2224/05022 , H01L2224/05147 , H01L2224/05562 , H01L2224/05572 , H01L2224/05582 , H01L2224/05647 , H01L2224/05666 , H01L2224/11462 , H01L2224/11823 , H01L2224/11825 , H01L2224/13021 , H01L2224/13147 , H01L2224/13562 , H01L2224/13582 , H01L2224/13583 , H01L2224/13644 , H01L2224/13655 , H01L2224/13664 , H01L2224/16227 , H01L2224/94
Abstract: A “package-less” integrated circuit semiconductor device is produced by laminating first and second insulating films on opposed first and second surfaces of a semiconductor wafer having semiconductor dice integrated therein. Electrically conductive formations towards die pads of the semiconductor dice are provided in vias to the semiconductor wafer opened through the first insulating film laminated on the first surface of the semiconductor wafer. The semiconductor wafer provided with these electrically conductive formations is singulated at separation lines between neighboring semiconductor dice to produce individual semiconductor devices. Each device has: opposed first and second device surfaces having protective portions of the first and second insulating films laminated thereon, and side surfaces extending between the opposed first and second device surfaces, these side surfaces being left uncovered by the first and second insulating films.
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