公开(公告)号：US20150243356A1

公开(公告)日：2015-08-27

申请号：US14623300

申请日：2015-02-16

Applicant: STMICROELECTRONICS S.r.l. ,  STMICROELECTRONICS PTE LTD

Inventor： Antonino CONTE ,  Alberto Jose' DI MARTINO ,  Kailash KHAIRNAR

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C8/04 ,  G11C13/0004 ,  G11C13/0023 ,  G11C13/0026 ,  G11C13/0061 ,  G11C13/0097 ,  G11C2213/79

Abstract: A phase change non-volatile memory device has a memory array with a plurality of memory cells arranged in rows and columns, a column decoder and a row decoder designed to select columns, and, respectively, rows of the memory array during operations of programming of corresponding memory cells. A control logic, coupled to the column decoder and the row decoder, is designed to execute a sequential programming command, to control the column decoder and row decoder to select one column of the memory array and execute sequential programming operations on a desired block of memory cells belonging to contiguous selected rows of the selected column.

Abstract translation: 相变非易失性存储器件具有存储器阵列，其具有排列成行和列的多个存储器单元，列解码器和行解码器，被设计为在编程操作期间选择列以及分别存储器阵列的行 相应的存储单元。 耦合到列解码器和行解码器的控制逻辑被设计为执行顺序编程命令，以控制列解码器和行解码器来选择存储器阵列的一列并对期望的存储块执行顺序编程操作 属于所选列的连续选定行的单元格。

公开(公告)号：US20150212881A1

公开(公告)日：2015-07-30

申请号：US14597845

申请日：2015-01-15

Applicant: STMicroelectronics S.r.l. ,  STMicroelectronics Pte Ltd

Inventor： Antonino CONTE ,  Kailash KHAIRNAR

IPC: G06F11/10 ,  G11C29/52

CPC classification number: G06F11/1068 ,  G06F11/08 ,  G06F11/1048 ,  G11C13/0004 ,  G11C13/004 ,  G11C29/52 ,  G11C2013/0054

Abstract: A memory device may include memory cells. The method may include receiving a request of reading a selected data word associated with a selected code word stored with an error correction code, and reading a first code word representing a first version of the selected code word by comparing a state of each selected memory cell with a first reference. The method may include verifying the first code word, setting the selected code word according to the first code word in response to a positive verification, reading at least one second code word representing a second version of the selected code word, verifying the second code word, and setting the selected code word according to the second code word in response to a negative verification of the first code word and to a positive verification of the second code word.

Abstract translation: 存储器件可以包括存储器单元。 该方法可以包括：接收读取与通过纠错码存储的所选码字相关联的所选择的数据字的请求，以及通过比较所选择的存储单元的状态来读取表示所选码字的第一版本的第一代码字 第一个参考。 该方法可以包括验证第一代码字，响应于正验证，根据第一代码字设置所选择的代码字，读取表示所选代码字的第二版本的至少一个第二代码字，验证第二代码字 并且响应于第一代码字的否定验证和第二代码字的肯定验证，根据第二代码字设置所选择的代码字。