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    VERTICAL GATE TRANSISTOR AND PIXEL STRUCTURE COMPRISING SUCH A TRANSISTOR
    3.
    发明申请
    VERTICAL GATE TRANSISTOR AND PIXEL STRUCTURE COMPRISING SUCH A TRANSISTOR 有权
    垂直栅极晶体管和包含这种晶体管的像素结构

    公开(公告)号：US20150279883A1

    公开(公告)日：2015-10-01

    申请号：US14660847

    申请日：2015-03-17

    Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

    Inventor： Jean-Robert MANOUVRIER ,  Pascal FONTENEAU ,  Xavier MONTAGNER

    IPC: H01L27/146 ,  H01L29/423

    CPC classification number: H01L27/14614 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L29/4236

    Abstract: The present disclosure relates to a photodiode comprising: a P-conductivity type substrate region, an electric charge collecting region for collecting electric charges appearing when a rear face of the substrate region receives light, the collecting region comprising an N-conductivity type region formed deep in the substrate region, an N-conductivity type read region formed in the substrate region, and an isolated transfer gate, formed in the substrate region in a deep isolating trench extending opposite a lateral face of the N-conductivity type region, next to the read region, and arranged for receiving a gate voltage to transfer electric charges stored in the collecting region toward the read region.

    Abstract translation: 本发明涉及一种光电二极管，包括：P导电型衬底区域，用于收集当衬底区域的后表面接收光时出现的电荷的电荷收集区域，所述收集区域包括形成深的N导电类型区域 在基板区域中，形成在基板区域中的N导电型读取区域和隔离的转移栅极，形成在与N导电型区域的侧面相反延伸的深隔离沟槽中的基板区域中， 并且被布置为接收栅极电压以将存储在收集区域中的电荷转移到读取区域。

    MOS TRANSISTOR ON SOI PROTECTED AGAINST OVERVOLTAGES
    4.
    发明申请
    MOS TRANSISTOR ON SOI PROTECTED AGAINST OVERVOLTAGES 有权
    防止过电压保护的SOI晶体管

    公开(公告)号：US20140015002A1

    公开(公告)日：2014-01-16

    申请号：US13921436

    申请日：2013-06-19

    Applicant: STMicroelectronics SA

    Inventor： Pascal FONTENEAU

    IPC: H01L29/749

    CPC classification number: H01L29/749 ,  H01L27/0262 ,  H01L27/0296 ,  H01L27/1203 ,  H01L27/1207

    Abstract: A MOS transistor protected against overvoltages formed in an SOI-type semiconductor layer arranged on an insulating layer itself arranged on a semiconductor substrate including a lateral field-effect control thyristor formed in the substrate at least partly under the MOS transistor, a field-effect turn-on region of the thyristor extending under at least a portion of a main electrode of the MOS transistor and being separated there-from by said insulating layer, the anode and the cathode of the thyristor being respectively connected to the drain and to the source of the MOS transistor, whereby the thyristor turns on in case of a positive overvoltage between the drain and the source of the MOS transistor.

    Abstract translation: 保护在被布置在绝缘层本身上的SOI型半导体层中形成的过电压的MOS晶体管，其本身布置在半导体衬底上，该半导体衬底包括至少部分地在MOS晶体管下方形成在衬底中的横向场效应控制晶闸管，场效应转 在所述晶体管的至少一部分在所述MOS晶体管的主电极的至少一部分延伸的区域之外，所述晶闸管的所述绝缘层，所述晶闸管的阳极和阴极分别连接到所述漏极和源极 MOS晶体管，从而在MOS晶体管的漏极和源极之间的正过电压的情况下晶闸管导通。

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