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1.发明授权Optical element in semiconductor laser device having a diffraction grating and improved resonance characteristics 失效具有衍射光栅和改善的谐振特性的半导体激光器件中的光学元件
公开(公告)号：US4658403A
公开(公告)日：1987-04-14
申请号：US666979
申请日：1984-10-31
CPC分类号： H01S3/0675 , H01S5/10 , H01S5/12 , H01S5/1032 , H01S5/227 , H01S5/2275
摘要： The disclosure is directed to an improved semiconductor laser device which includes a first light deriving optical waveguide connected approximately perpendicularly to a light exit face at one side, a second light deriving optical waveguide connected approximately perpendicularly to another light exit face at the other side and having an optical axis different from that of the first light deriving optical waveguide, and a light emitting optical waveguide subjected to optical coupling with a periodical diffraction grating for optical resonance, and connected to end portions of the first and second light deriving optical waveguides within the semiconductor laser device.
摘要翻译： 本发明涉及一种改进的半导体激光器件，其包括大致垂直于一侧的光出射面连接的第一导光光波导，在另一侧大致垂直于另一光出射面连接的第二导光光波导，并具有 与第一导光光波导的光轴不同的光轴和与光谐振的周期性衍射光栅进行光耦合的发光光波导，并且连接到半导体内的第一和第二导光光波导的端部 激光装置。
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公开(公告)号：US4679200A
公开(公告)日：1987-07-07
申请号：US691917
申请日：1985-01-16
CPC分类号： H01S5/10 , H01S5/2232 , H01S2301/18 , H01S2301/185 , H01S5/2234
摘要： A semiconductor laser includes a current blocking layer formed on a substrate, a first cladding layer formed on the current blocking layer, an active layer formed on the first cladding layer, and a second cladding layer formed on the active layer. An indent is formed in the current blocking layer near the center of the laser element, and a V-shaped groove is formed in the current blocking layer across the indent. A gain guide structure is formed where the indent is formed, and an index guide structure is formed near the cleaved facet. A stable transverse mode laser emission is ensured without the influence of the return beam reflected from the disc surface, and the attendant mode competition noise is reduced.
摘要翻译： 半导体激光器包括形成在基板上的电流阻挡层，形成在电流阻挡层上的第一覆盖层，形成在第一覆盖层上的有源层和形成在有源层上的第二覆层。 在激光元件的中心附近的电流阻挡层中形成凹口，并且在电流阻挡层中形成跨越凹口的V形槽。 在形成凹口的地方形成增益引导结构，并且在切割面附近形成引导引导结构。 确保稳定的横模式激光发射，而不受来自盘表面反射的返回光束的影响，并且伴随模式的竞争噪声降低。
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公开(公告)号：US4901328A
公开(公告)日：1990-02-13
申请号：US380745
申请日：1989-07-17
CPC分类号： H01S5/24 , H01S5/028 , H01S5/1039 , H01S5/20
摘要： A V-channeled substrate inner strip (VSIS) semiconductor laser includes a p-Ga.sub.1-31 y Al.sub.y As active layer sandwiched between a P-Ga.sub.1-x Al.sub.x As first cladding layer and an n-Ga.sub.1-x Al.sub.x As second cladding layer. The AlAs mole fraction x of the first and second cladding layers is selected between about 0.45 and 0.52 in order to minimize the mode competition noise at an operating temperature. In a preferred form, the cavity length is longer than 300 .mu.m so as to minimize the occurrence of the mode competition noise at the operating temperature. Furthermore, the reflectivity R.sub.1 of the front facet and the reflectivity R.sub.2 of the rear facet are selected to satisfy the condition 0.1.ltoreq.ln(1/R.sub.1 .multidot.R.sub.2).ltoreq.1.
摘要翻译： V沟道衬底内条（VSIS）半导体激光器包括夹在P-Ga1-xAlxAs第一包层和n-Ga1-xAlxAs第二覆层之间的p-Ga1-31 yAlyAs有源层。 第一和第二包覆层的AlAs摩尔分数x在约0.45和0.52之间选择，以便使工作温度下的模式竞争噪声最小化。 在优选的形式中，空腔长度大于300μm，以便在工作温度下最小化模式竞争噪声的发生。 此外，选择前面的反射率R1和后面的反射率R2以满足条件0.1
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公开(公告)号：US4872174A
公开(公告)日：1989-10-03
申请号：US239301
申请日：1988-09-01
申请人： Sadayoshi Matsui , Mototaka Taneya , Mitsuhiro Matsumoto , Hiroyuki Hosoba , Haruhisa Takiguchi , Hiroaki Kudo
发明人： Sadayoshi Matsui , Mototaka Taneya , Mitsuhiro Matsumoto , Hiroyuki Hosoba , Haruhisa Takiguchi , Hiroaki Kudo
CPC分类号： H01S5/20 , H01S5/125 , H01S5/2232 , H01S5/12 , H01S5/32316 , H01S5/4031
摘要： A semiconductor laser device comprises a laminated crystal structure which includes a Ga.sub.1-y Al.sub.y As optical guiding layer and a Ga.sub.1-z Al.sub.z As (z>y) cladding layer in this sequence, the cladding layer is formed on both a Ga.sub.1-x Al.sub.2 As (0.ltoreq.x.ltoreq.0.1 and x
摘要翻译： 半导体激光器件包括依次包括Ga1-yAlyAs光导层和Ga1-zAlzAs（z> y）包覆层的层压晶体结构，在Ga 1-x Al 2 As（z） x <= 0.1和x
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公开(公告)号：US4853936A
公开(公告)日：1989-08-01
申请号：US181016
申请日：1988-04-13
申请人： Sadayoshi Matsui , Shinji Kaneiwa , Taiji Morimoto , Masahiro Yamaguchi , Mototaka Taneya , Mitsuhiro Matsumoto
发明人： Sadayoshi Matsui , Shinji Kaneiwa , Taiji Morimoto , Masahiro Yamaguchi , Mototaka Taneya , Mitsuhiro Matsumoto
CPC分类号： H01S5/10 , H01S5/24 , H01S5/1064
摘要： An index guided semiconductor laser device comprising a striped optical waveguide in the active layer, at least a part of the wavegide having continuous indentations at the interface between the waveguide and the outside of the waveguide, whereby only laser light of a high-order transverse mode is radiated from the waveguide to the outside of the waveguide and only laser light of the fundamental transverse mode is propagated within the waveguide.
摘要翻译： 一种折射率引导半导体激光器件，包括有源层中的带状光波导，波导的至少一部分在波导和波导外侧之间的界面处具有连续的凹陷，从而仅仅是高阶横模的激光 从波导辐射到波导的外部，并且只有基本横向模式的激光在波导内传播。
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6.发明授权Method for producing a semiconductor laser device having a buried heterostructure 失效一种具有掩埋异质结构的半导体激光器件的制造方法
公开(公告)号：US4692206A
公开(公告)日：1987-09-08
申请号：US830857
申请日：1986-02-19
CPC分类号： H01S5/227 , H01S5/2206 , H01S5/2275
摘要： A method for producing a semiconductor laser device having a buried heterostructure includes a multi-layered crystal structure, containing an active layer for laser oscillation, on a p-substrate, said multi-layered crystal structure having a striped mesa-portion, a p-n-p multi-layered structure surrounding said mesa-portion and a burying layer disposed on an upper face of said striped mesa-portion. The unique structure results in a heterojunction at each of both side faces of said active layer in said mesa-portion.
摘要翻译： 一种具有掩埋异质结构的半导体激光器件的制造方法包括在p型基板上含有激光振荡用活性层的多层结晶结构体，具有条状台面部的多层结晶结构体，pnp多 围绕所述台面部分的层状结构以及设置在所述条状台面部分的上表面上的掩埋层。 独特的结构在所述台面部分中的所述有源层的两个侧面的每一个处产生异质结。
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公开(公告)号：US4745616A
公开(公告)日：1988-05-17
申请号：US830864
申请日：1986-02-19
CPC分类号： H01S5/12
摘要： A semiconductor laser device comprising a GaAlAs first cladding layer, a Ga.sub.1-x Al.sub.x As (0.ltoreq.x.ltoreq.0.4) active layer for laser oscillation, an In.sub.1-y Ga.sub.y P.sub.1-z As.sub.z (z=2.04y-1.04, and 0.ltoreq.z.ltoreq.1) optical guiding layer with a diffraction grating thereon, a GaAlAs buffer layer disposed between said active layer and said optical guiding layer, and a GaAlAs second cladding layer, the width of the forbidden band of said buffer layer being greater than that of the active layer and smaller than that of the optical guiding layer.
摘要翻译： 包括GaAlAs第一包层，用于激光振荡的Ga1-xAlxAs（0≤x≤0.4）有源层，In1-yGayP1-zAsz（z = 2.04y-1.04和0）的半导体激光器件， = z 1）具有衍射光栅的光导层，设置在所述有源层和所述光导层之间的GaAlAs缓冲层和GaAlAs第二包层，所述缓冲层的禁带的宽度更大 比活性层的厚度小，而且比光导层的面积小。
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公开(公告)号：US4745615A
公开(公告)日：1988-05-17
申请号：US789787
申请日：1985-10-21
CPC分类号： H01S5/32308 , H01S5/12 , H01S5/3211
摘要： A semiconductor laser device for laser oscillation at a wavelength in the range of from 660 nm to 890 nm which includes an active layer of Ga.sub.1-x Al.sub.x As (0.ltoreq.x.ltoreq.0.4) or In.sub.1-y Ga.sub.y P.sub.1-z As.sub.z (0.51.ltoreq.y.ltoreq.1, 0.ltoreq.z.ltoreq.1, and z=2.04y-1.04) and a layer with a diffraction grating thereon of In.sub.1-y Ga.sub.y P.sub.1-z As (z=2.04y-1.04) which is adjacent to the active layer.
摘要翻译： 用于在660nm至890nm范围内的波长的激光振荡的半导体激光器件，其包括Ga1-xAlxAs（0≤x≤0.4）或In1-yGayP1-zAsz有效层（0.51 < = y 1 = 0,0 / z = 1，z = 2.04y-1.04）和其上具有In1-yGayP1-zAs（z = 2.04y-1.04）的衍射光栅的层，其相邻 到活动层。
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公开(公告)号：US4997747A
公开(公告)日：1991-03-05
申请号：US253811
申请日：1988-10-05
CPC分类号： H01S5/12 , G02B5/1857 , G02B5/32 , G02B6/124 , H01S5/124 , Y10S359/90
摘要： A method for the formation of a diffraction grating on a substrate using a holographic technique and an etching technique, wherein the periodicity of the pattern of the diffraction grating can be changed at will by a change of the light-path length of one of the two light fluxes from a holographic exposing system.
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公开(公告)号：US4908831A
公开(公告)日：1990-03-13
申请号：US314363
申请日：1989-02-22
CPC分类号： H01S5/24 , H01S5/227 , H01S5/0035 , H01S5/2235 , H01S5/2237 , H01S5/2275
摘要： A buried type semiconductor laser device comprising a multi-layered epitaxial growth crystal including a striped laser-oscillation operating area on a semiconductor substrate, wherein said laser-oscillation operating area contains a buffer layer having the same polarity as said substrate, an active layer and a cladding layer having a polarity different from that of said substrate, said laser-oscillation operation area being sandwiched between one part of the burying layer and another part of the burying layer, which are disposed on said substrate and which have a polarity different from that of said substrate, through said substrate or a diffusion region having an impurity with the same polarity as said substrate so as to electrically isolate said burying layer from said cladding layer, thereby maintaining ineffective current flowing from said cladding layer to said burying layer at a low level even when current injected into said device is increased.
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