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1.发明授权Optical element in semiconductor laser device having a diffraction grating and improved resonance characteristics 失效具有衍射光栅和改善的谐振特性的半导体激光器件中的光学元件
公开(公告)号：US4658403A
公开(公告)日：1987-04-14
申请号：US666979
申请日：1984-10-31
CPC分类号： H01S3/0675 , H01S5/10 , H01S5/12 , H01S5/1032 , H01S5/227 , H01S5/2275
摘要： The disclosure is directed to an improved semiconductor laser device which includes a first light deriving optical waveguide connected approximately perpendicularly to a light exit face at one side, a second light deriving optical waveguide connected approximately perpendicularly to another light exit face at the other side and having an optical axis different from that of the first light deriving optical waveguide, and a light emitting optical waveguide subjected to optical coupling with a periodical diffraction grating for optical resonance, and connected to end portions of the first and second light deriving optical waveguides within the semiconductor laser device.
摘要翻译： 本发明涉及一种改进的半导体激光器件，其包括大致垂直于一侧的光出射面连接的第一导光光波导，在另一侧大致垂直于另一光出射面连接的第二导光光波导，并具有 与第一导光光波导的光轴不同的光轴和与光谐振的周期性衍射光栅进行光耦合的发光光波导，并且连接到半导体内的第一和第二导光光波导的端部 激光装置。
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公开(公告)号：US4679200A
公开(公告)日：1987-07-07
申请号：US691917
申请日：1985-01-16
CPC分类号： H01S5/10 , H01S5/2232 , H01S2301/18 , H01S2301/185 , H01S5/2234
摘要： A semiconductor laser includes a current blocking layer formed on a substrate, a first cladding layer formed on the current blocking layer, an active layer formed on the first cladding layer, and a second cladding layer formed on the active layer. An indent is formed in the current blocking layer near the center of the laser element, and a V-shaped groove is formed in the current blocking layer across the indent. A gain guide structure is formed where the indent is formed, and an index guide structure is formed near the cleaved facet. A stable transverse mode laser emission is ensured without the influence of the return beam reflected from the disc surface, and the attendant mode competition noise is reduced.
摘要翻译： 半导体激光器包括形成在基板上的电流阻挡层，形成在电流阻挡层上的第一覆盖层，形成在第一覆盖层上的有源层和形成在有源层上的第二覆层。 在激光元件的中心附近的电流阻挡层中形成凹口，并且在电流阻挡层中形成跨越凹口的V形槽。 在形成凹口的地方形成增益引导结构，并且在切割面附近形成引导引导结构。 确保稳定的横模式激光发射，而不受来自盘表面反射的返回光束的影响，并且伴随模式的竞争噪声降低。
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公开(公告)号：US4901328A
公开(公告)日：1990-02-13
申请号：US380745
申请日：1989-07-17
CPC分类号： H01S5/24 , H01S5/028 , H01S5/1039 , H01S5/20
摘要： A V-channeled substrate inner strip (VSIS) semiconductor laser includes a p-Ga.sub.1-31 y Al.sub.y As active layer sandwiched between a P-Ga.sub.1-x Al.sub.x As first cladding layer and an n-Ga.sub.1-x Al.sub.x As second cladding layer. The AlAs mole fraction x of the first and second cladding layers is selected between about 0.45 and 0.52 in order to minimize the mode competition noise at an operating temperature. In a preferred form, the cavity length is longer than 300 .mu.m so as to minimize the occurrence of the mode competition noise at the operating temperature. Furthermore, the reflectivity R.sub.1 of the front facet and the reflectivity R.sub.2 of the rear facet are selected to satisfy the condition 0.1.ltoreq.ln(1/R.sub.1 .multidot.R.sub.2).ltoreq.1.
摘要翻译： V沟道衬底内条（VSIS）半导体激光器包括夹在P-Ga1-xAlxAs第一包层和n-Ga1-xAlxAs第二覆层之间的p-Ga1-31 yAlyAs有源层。 第一和第二包覆层的AlAs摩尔分数x在约0.45和0.52之间选择，以便使工作温度下的模式竞争噪声最小化。 在优选的形式中，空腔长度大于300μm，以便在工作温度下最小化模式竞争噪声的发生。 此外，选择前面的反射率R1和后面的反射率R2以满足条件0.1
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公开(公告)号：US4872174A
公开(公告)日：1989-10-03
申请号：US239301
申请日：1988-09-01
申请人： Sadayoshi Matsui , Mototaka Taneya , Mitsuhiro Matsumoto , Hiroyuki Hosoba , Haruhisa Takiguchi , Hiroaki Kudo
发明人： Sadayoshi Matsui , Mototaka Taneya , Mitsuhiro Matsumoto , Hiroyuki Hosoba , Haruhisa Takiguchi , Hiroaki Kudo
CPC分类号： H01S5/20 , H01S5/125 , H01S5/2232 , H01S5/12 , H01S5/32316 , H01S5/4031
摘要： A semiconductor laser device comprises a laminated crystal structure which includes a Ga.sub.1-y Al.sub.y As optical guiding layer and a Ga.sub.1-z Al.sub.z As (z>y) cladding layer in this sequence, the cladding layer is formed on both a Ga.sub.1-x Al.sub.2 As (0.ltoreq.x.ltoreq.0.1 and x
摘要翻译： 半导体激光器件包括依次包括Ga1-yAlyAs光导层和Ga1-zAlzAs（z> y）包覆层的层压晶体结构，在Ga 1-x Al 2 As（z） x <= 0.1和x
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公开(公告)号：US4853936A
公开(公告)日：1989-08-01
申请号：US181016
申请日：1988-04-13
申请人： Sadayoshi Matsui , Shinji Kaneiwa , Taiji Morimoto , Masahiro Yamaguchi , Mototaka Taneya , Mitsuhiro Matsumoto
发明人： Sadayoshi Matsui , Shinji Kaneiwa , Taiji Morimoto , Masahiro Yamaguchi , Mototaka Taneya , Mitsuhiro Matsumoto
CPC分类号： H01S5/10 , H01S5/24 , H01S5/1064
摘要： An index guided semiconductor laser device comprising a striped optical waveguide in the active layer, at least a part of the wavegide having continuous indentations at the interface between the waveguide and the outside of the waveguide, whereby only laser light of a high-order transverse mode is radiated from the waveguide to the outside of the waveguide and only laser light of the fundamental transverse mode is propagated within the waveguide.
摘要翻译： 一种折射率引导半导体激光器件，包括有源层中的带状光波导，波导的至少一部分在波导和波导外侧之间的界面处具有连续的凹陷，从而仅仅是高阶横模的激光 从波导辐射到波导的外部，并且只有基本横向模式的激光在波导内传播。
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公开(公告)号：US5280493A
公开(公告)日：1994-01-18
申请号：US859587
申请日：1992-03-27
CPC分类号： B82Y20/00 , H01S5/341 , H01S5/1228 , H01S5/2059 , H01S5/2238 , H01S5/2272 , H01S5/343
摘要： A quantum wire laser comprises a first multi-layer structure which is formed on a substrate and includes at least one first quantum well layer sandwiched by barrier layers, a second multi-layer structure which is formed on a laminated cross-section of the first multi-layer structure and is obtained by successively laminating a first barrier layer having a band gap larger than that of the first quantum well layer, a second quantum well layer having a band gap nearly equal to that of the first quantum well layer, and a second barrier layer having a band gap larger than those of the first and second quantum well layers, wherein a region for confining electrons is disposed in at least one of regions in the vicinity of the first quantum well layer and the second quantum well layer.
摘要翻译： 量子线激光器包括形成在衬底上并包括被阻挡层夹在中间的至少一个第一量子阱层的第一多层结构，第二多层结构形成在第一多层结构的层叠横截面上 通过连续地层叠具有比第一量子阱层的带隙大的带隙的第一势垒层，具有与第一量子阱层的带隙几乎相等的带隙的第二量子阱层而获得的第二势垒层， 阻挡层的带隙大于第一和第二量子阱层的阻挡层，其中用于限制电子的区域设置在第一量子阱层和第二量子阱层附近的至少一个区域中。
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公开(公告)号：US5361271A
公开(公告)日：1994-11-01
申请号：US120277
申请日：1993-09-13
CPC分类号： H01S5/2231 , H01S5/2004 , H01S5/2205 , H01S5/2206 , H01S5/223 , H01S5/2232 , H01S5/32316
摘要： A semiconductor laser of the present invention includes: a semiconductor substrate, a multi-layered structure formed on the semiconductor substrate and a current and light confining section formed on the multi-layered structure, wherein the current and light confining section includes at least two multi-layered current and light confining portions each having a laser beam transmission layer and a laser beam absorption layer formed on the laser beam transmission layer, and at least one stripe groove which spatially separates the at least two current and light confining portions; wherein an equivalent refractive index in the multi-layered current and light confining portions with respect to a laser beam in a fundamental transverse mode is made smaller than that within the stripe groove; wherein the multi-layered structure includes an active layer, and the active layer has a region positioned below the stripe groove of the current and light confining section and regions positioned below a respective one of the multi-layered current and light confining portions; and wherein a optical confinement factor .GAMMA. of the active layer outside the stripe groove with respect to a laser beam in a guide mode is larger than that outside the stripe groove with respect to a laser beam in an anti-guide mode.
摘要翻译： 本发明的半导体激光器包括：半导体衬底，形成在半导体衬底上的多层结构和形成在多层结构上的电流和光限制部分，其中电流和光限制部分包括至少两个多重结构 - 每个具有形成在激光束透射层上的激光束透射层和激光束吸收层的电流和光限制部分以及空间上分离至少两个电流和光限制部分的至少一个条纹槽; 其中相对于基本横向模式的激光束的多层电流和光限制部分中的等效折射率小于条纹槽内的折射率; 其中所述多层结构包括有源层，并且所述有源层具有位于所述电流和光限制部分的条纹槽下面的区域和位于所述多层电流和光限制部分中的相应一个之下的区域; 并且其中在导向模式下相对于激光束在条纹槽外部的有源层的光限制因子GAMMA相对于反向导向模式中的激光束大于条纹槽外侧的光限制因子GAMMA。
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公开(公告)号：US4903274A
公开(公告)日：1990-02-20
申请号：US195742
申请日：1988-05-18
IPC分类号： H01S5/40
CPC分类号： H01S5/4068
摘要： A semiconductor laser array device comprising a substrate with a plurality of grooves and an active layer disposed over the substrate, resulting in optical waveguides within the active layer corresponding to the grooves, wherein the grooves are disposed over the entire area of the substrate and a means for preventing the injection of current into some of the grooves that are positioned outside of the central area of the substrate is disposed whereby the other grooves positioned in the central area of the substrate consitute a laser array portion of the semiconductor laser array device.
摘要翻译： 一种半导体激光器阵列器件，包括具有多个沟槽的衬底和设置在衬底上的有源层，从而产生与沟槽对应的有源层内的光波导，其中沟槽设置在衬底的整个区域上， 用于防止将电流注入到位于基板的中心区域外部的一些凹槽中，由此位于基板的中心区域中的其它凹槽构成半导体激光器阵列器件的激光器阵列部分。
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公开(公告)号：US4815088A
公开(公告)日：1989-03-21
申请号：US105638
申请日：1987-10-05
CPC分类号： H01S5/4068
摘要： A semiconductor laser array device with a waveguide structure comprising waveguides designed such that the widths thereof gradually increase from the center waveguide to the waveguides positioned at both sides of the array portions.
摘要翻译： 一种具有波导结构的半导体激光器阵列器件，其包括设计成使得其宽度从中心波导逐渐增加到位于阵列部分两侧的波导的波导。
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公开(公告)号：US4811351A
公开(公告)日：1989-03-07
申请号：US35477
申请日：1987-04-07
CPC分类号： H01S5/028 , G02B6/122 , H01S5/4068
摘要： A semiconductor laser array device comprising a substrate; an index-waveguiding area positioned on said substrate; a Fourier-converting area, which is adjacent to said waveguiding area and in which laser lights emitted with synchronized phases from said waveguiding area undergo the Fourier-conversion, positioned on said substrate; and a reflecting mirror, which is adjacent to said Fourier-converting area and by which said converted laser lights with a 0.degree.-phase shift mode are selectively reflected so as to be incident upon said waveguiding areas.
摘要翻译： 一种半导体激光器阵列器件，包括衬底; 位于所述基板上的折射率波导区域; 傅里叶变换区域，其邻近所述波导区域，并且其中来自所述波导区域的同步相位发射的激光经历傅里叶变换，位于所述基板上; 以及反射镜，其与所述傅立叶变换区域相邻，并且所述经转换的0°相移模式的激光被选择性地反射以入射到所述波导区域。
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