Abstract:
A plasma-enhanced chemical vapor deposition device includes: a sprayer to spray a gas onto a substrate; a lift to support a mask including a pattern through which the gas to be sprayed by the sprayer passes, and to raise or lower the mask; and a susceptor to support the substrate on which the gas to be passed through the mask is to be deposited, and to raise or lower the substrate, wherein the susceptor includes a first ground to electrically contact the mask during a deposition process during which the gas is deposited on the substrate.
Abstract:
A deposition mask includes a metal mask body in which a deposition opening is defined; and a coating layer including aluminum oxynitride, on an outer surface of the metal mask body.
Abstract:
A plasma-enhanced chemical vapor deposition device includes: a sprayer to spray a gas onto a substrate; a lift to support a mask including a pattern through which the gas to be sprayed by the sprayer passes, and to raise or lower the mask; and a susceptor to support the substrate on which the gas to be passed through the mask is to be deposited, and to raise or lower the substrate, wherein the susceptor includes a first ground to electrically contact the mask during a deposition process during which the gas is deposited on the substrate.