Abstract:
A sputtering apparatus includes a chamber, a target section disposed in the chamber, and a stage facing the target section. The target section includes a first target having a first diameter and a second target having a second diameter different from the first diameter. The first target and the second target each extend in a longitudinal direction and have a cylindrical shape, and the first and second diameters are respectively measured along a cross-section of corresponding first and second targets taken along a direction perpendicular to the longitudinal direction.
Abstract:
A thin film transistor array panel that includes: a substrate; a gate electrode disposed on the substrate; a semiconductor layer disposed on the substrate; a gate insulating layer disposed between the gate electrode and the semiconductor layer; a source electrode disposed on the semiconductor layer and a drain electrode facing the source electrode; a metal oxide layer covering the source electrode and the drain electrode; and a passivation layer covering the source electrode, the drain electrode, and the metal oxide layer, wherein the source electrode and the drain electrode include a first material and a second material which is added to the first material and metal included in the metal oxide layer is formed by diffusing the second material.
Abstract:
Provided is a display device including a first substrate including a pixel electrode provided for each pixel; and a second substrate facing the first substrate and including an insulating substrate, a light blocking member disposed along a boundary the pixel, and a common electrode disposed along the plurality of pixels; wherein the common electrode includes a first common electrode layer and a second common electrode layer, the first common electrode layer and the second common electrode layer including a transparent conductive material, wherein the first common electrode layer is disposed on one surface of the insulating substrate, wherein the light blocking member is disposed on the first common electrode layer, and wherein the second common electrode layer is disposed on the first common electrode layer and the light blocking member.
Abstract:
Provided is a thin film transistor panel including: a substrate; a gate electrode positioned on the substrate; a gate insulating layer positioned on the gate electrode; an oxide semiconductor positioned on the gate insulating layer and including an oxide layer; and a source electrode and a drain electrode positioned on the oxide semiconductor and facing each other based on a channel of the oxide semiconductor, in which the oxide layer overlaps the gate electrode and is positioned on the oxide semiconductor.
Abstract:
A cover window is disclosed that includes a planar surface part, side surface parts bent from a side surface of the planar side part, and curved surface parts bent from a curved surface of the planar surface part. The cover window includes: a base substrate corresponding to the planar surface part, the side surface parts, and the curved surface parts; and a light blocking layer disposed on the bottom of the base substrate. A rear surface of the base substrate, which corresponds to the curved surface parts, includes: a curved area having a curvature corresponding to the curved surface parts; and a tapered area having a tapered shape.
Abstract:
A thin film transistor array panel that includes: a substrate; a gate electrode disposed on the substrate; a semiconductor layer disposed on the substrate; a gate insulating layer disposed between the gate electrode and the semiconductor layer; a source electrode disposed on the semiconductor layer and a drain electrode facing the source electrode; a metal oxide layer covering the source electrode and the drain electrode; and a passivation layer covering the source electrode, the drain electrode, and the metal oxide layer, wherein the source electrode and the drain electrode include a first material and a second material which is added to the first material and metal included in the metal oxide layer is formed by diffusing the second material.
Abstract:
The method of forming a layer using the sputtering device includes: placing a substrate within a chamber; depositing target particles emitted from a target, which faces the substrate, on the substrate using a sputtering process; and horizontally moving a plurality of shield rods, which are installed in a shield mask disposed between the substrate and the target and are separated from each other along a first direction, during the sputtering process.
Abstract:
A light unit according to an exemplary embodiment includes a light source and an optical member transmitting and converting light emitted from the light source, where the optical member includes a light guide, a low refractive index layer disposed on the light guide and having a smaller refractive index than that of the light guide, and a wavelength conversion layer disposed on the low refractive index layer and including quantum dots, and the low refractive index layer includes a metal.
Abstract:
An exemplary embodiment of the present invention provides a thin film transistor array panel and an organic light emitting diode display including the same including a substrate, a semiconductor disposed on the substrate, a first gate insulation layer disposed on the semiconductor, and a first diffusion barrier layer disposed on the first gate insulation layer. A second diffusion barrier layer is disposed on a lateral surface of the first diffusion barrier layer. A first gate electrode is disposed on the first diffusion barrier layer. A source electrode and a drain electrode are connected to the semiconductor. The first diffusion barrier layer comprises a metal, and the second diffusion barrier layer comprises a metal oxide including the metal.