公开(公告)号：US20160197192A1

公开(公告)日：2016-07-07

申请号：US14841559

申请日：2015-08-31

Applicant: Samsung Display Co., Ltd.

Inventor： Hyun Ju KANG ,  Dong Hee LEE ,  Gwang Min CHA ,  Sang Won SHIN ,  Sang Woo SOHN

IPC: H01L29/786 ,  H01L29/423 ,  H01L21/441 ,  H01L29/45 ,  H01L21/4763 ,  H01L29/66 ,  H01L29/417

CPC classification number: H01L29/66969 ,  H01L21/47635 ,  H01L21/76834 ,  H01L21/76852 ,  H01L21/76855 ,  H01L21/76867 ,  H01L23/53233 ,  H01L23/53238 ,  H01L27/1225 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/78618 ,  H01L29/7869

Abstract: A thin film transistor array panel that includes: a substrate; a gate electrode disposed on the substrate; a semiconductor layer disposed on the substrate; a gate insulating layer disposed between the gate electrode and the semiconductor layer; a source electrode disposed on the semiconductor layer and a drain electrode facing the source electrode; a metal oxide layer covering the source electrode and the drain electrode; and a passivation layer covering the source electrode, the drain electrode, and the metal oxide layer, wherein the source electrode and the drain electrode include a first material and a second material which is added to the first material and metal included in the metal oxide layer is formed by diffusing the second material.

Abstract translation: 一种薄膜晶体管阵列面板，包括：基板; 设置在所述基板上的栅电极; 设置在所述基板上的半导体层; 设置在所述栅极电极和所述半导体层之间的栅极绝缘层; 设置在半导体层上的源电极和面对源电极的漏电极; 覆盖源电极和漏电极的金属氧化物层; 以及覆盖所述源电极，所述漏电极和所述金属氧化物层的钝化层，其中所述源电极和所述漏极包括第一材料和第二材料，所述第一材料和第二材料被添加到所述第一材料中，并且所述金属包括在所述金属氧化物层中 通过扩散第二材料形成。

公开(公告)号：US20170162640A1

公开(公告)日：2017-06-08

申请号：US15237866

申请日：2016-08-16

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Dong Hee LEE ,  Hyun Ju KANG ,  Sang Won SHIN

IPC: H01L27/32

CPC classification number: H01L27/3262 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/518 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78645 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2227/323

Abstract: An exemplary embodiment of the present invention provides a thin film transistor array panel and an organic light emitting diode display including the same including a substrate, a semiconductor disposed on the substrate, a first gate insulation layer disposed on the semiconductor, and a first diffusion barrier layer disposed on the first gate insulation layer. A second diffusion barrier layer is disposed on a lateral surface of the first diffusion barrier layer. A first gate electrode is disposed on the first diffusion barrier layer. A source electrode and a drain electrode are connected to the semiconductor. The first diffusion barrier layer comprises a metal, and the second diffusion barrier layer comprises a metal oxide including the metal.

公开(公告)号：US20170152596A1

公开(公告)日：2017-06-01

申请号：US15243162

申请日：2016-08-22

Applicant: Samsung Display Co., Ltd.

Inventor： Sang Woo SOHN ,  Hyun Ju KANG ,  Chang Oh JEONG

IPC: C23C14/35 ,  H01J37/34

CPC classification number: C23C14/352 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/3417 ,  H01J37/3423 ,  H01J37/3441 ,  H01J37/3455

Abstract: A sputtering device includes a plurality of sputtering targets provided in a process chamber, a substrate holder facing the plurality of sputtering targets and configured to support a substrate, and a deposition mask disposed between the plurality of sputtering targets and the substrate, the deposition mask covering an end portion of the substrate. At least one of the plurality of sputtering targets has an arc shape that is convex toward the substrate and a remainder of the plurality of sputtering targets are flat facing toward the substrate.

公开(公告)号：US20170110299A1

公开(公告)日：2017-04-20

申请号：US15238377

申请日：2016-08-16

Applicant: Samsung Display Co., Ltd.

Inventor： Chang Oh JEONG ,  Hyun Eok SHIN ,  Hyun Ju KANG ,  Joon Yong PARK ,  Sang Woo SOHN ,  Sang Won SHIN ,  Dong Hee LEE

IPC: H01J37/34 ,  C23C14/34

CPC classification number: H01J37/3423 ,  C23C14/3407 ,  C23C14/3464 ,  H01J37/3417 ,  H01J37/3426 ,  H01J37/3429

Abstract: A sputtering apparatus includes a chamber, a target section disposed in the chamber, and a stage facing the target section. The target section includes a first target having a first diameter and a second target having a second diameter different from the first diameter. The first target and the second target each extend in a longitudinal direction and have a cylindrical shape, and the first and second diameters are respectively measured along a cross-section of corresponding first and second targets taken along a direction perpendicular to the longitudinal direction.

公开(公告)号：US20160197190A1

公开(公告)日：2016-07-07

申请号：US14754213

申请日：2015-06-29

Applicant: Samsung Display Co., Ltd.

Inventor： Dong Hee LEE ,  Sang Won SHIN ,  Hyun Ju KANG ,  Sang Woo SOHN ,  Chang Oh JEONG

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/417 ,  H01L27/12 ,  H01L29/40

CPC classification number: H01L29/7869 ,  H01L27/124 ,  H01L29/401 ,  H01L29/78696

Abstract: Provided is a thin film transistor panel including: a substrate; a gate electrode positioned on the substrate; a gate insulating layer positioned on the gate electrode; an oxide semiconductor positioned on the gate insulating layer and including an oxide layer; and a source electrode and a drain electrode positioned on the oxide semiconductor and facing each other based on a channel of the oxide semiconductor, in which the oxide layer overlaps the gate electrode and is positioned on the oxide semiconductor.

Abstract translation: 提供一种薄膜晶体管面板，包括：基板; 位于所述基板上的栅电极; 位于所述栅电极上的栅极绝缘层; 位于所述栅极绝缘层上且包括氧化物层的氧化物半导体; 以及位于所述氧化物半导体上的源电极和漏极，并且基于所述氧化物半导体的沟道彼此相对，所述氧化物层与所述栅电极重叠并位于所述氧化物半导体上。

公开(公告)号：US20170179262A1

公开(公告)日：2017-06-22

申请号：US15446858

申请日：2017-03-01

Applicant: Samsung Display Co., Ltd.

Inventor： Hyun Ju KANG ,  Dong Hee LEE ,  Gwang Min CHA ,  Sang Won SHIN ,  Sang Woo SOHN

IPC: H01L29/66 ,  H01L23/532 ,  H01L21/4763 ,  H01L27/12 ,  H01L29/786 ,  H01L29/417

CPC classification number: H01L29/66969 ,  H01L21/47635 ,  H01L21/76834 ,  H01L21/76852 ,  H01L21/76855 ,  H01L21/76867 ,  H01L23/53233 ,  H01L23/53238 ,  H01L27/1225 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/78618 ,  H01L29/7869

Abstract: A thin film transistor array panel that includes: a substrate; a gate electrode disposed on the substrate; a semiconductor layer disposed on the substrate; a gate insulating layer disposed between the gate electrode and the semiconductor layer; a source electrode disposed on the semiconductor layer and a drain electrode facing the source electrode; a metal oxide layer covering the source electrode and the drain electrode; and a passivation layer covering the source electrode, the drain electrode, and the metal oxide layer, wherein the source electrode and the drain electrode include a first material and a second material which is added to the first material and metal included in the metal oxide layer is formed by diffusing the second material.

公开(公告)号：US20160160340A1

公开(公告)日：2016-06-09

申请号：US14670403

申请日：2015-03-26

Applicant: Samsung Display Co., Ltd.

Inventor： Hyun Ju KANG ,  Sang Woo SOHN ,  Sang Won SHIN ,  Dong Hee LEE ,  Chang Oh JEONG

IPC: C23C14/04

CPC classification number: C23C14/044 ,  H01J37/34 ,  H01J37/3447

Abstract: The method of forming a layer using the sputtering device includes: placing a substrate within a chamber; depositing target particles emitted from a target, which faces the substrate, on the substrate using a sputtering process; and horizontally moving a plurality of shield rods, which are installed in a shield mask disposed between the substrate and the target and are separated from each other along a first direction, during the sputtering process.

Abstract translation: 使用溅射装置形成层的方法包括：将基板放置在室内; 使用溅射工艺将从面向衬底的靶发射的靶颗粒沉积在衬底上; 并且水平移动多个屏蔽杆，其安装在设置在基板和靶之间的屏蔽掩模中，并且在溅射过程期间沿着第一方向彼此分离。