公开(公告)号：US20170301743A1

公开(公告)日：2017-10-19

申请号：US15453513

申请日：2017-03-08

Applicant: Samsung Display Co., LTD.

Inventor： Shin-Hyuk YANG ,  Kwang-Soo LEE ,  Doo-Hyun KIM ,  Jee-Hoon KIM

IPC: H01L27/32 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L27/3262 ,  H01L21/469 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/3265 ,  H01L29/40111 ,  H01L29/7869 ,  H01L2021/775 ,  H01L2227/323

Abstract: An organic light emitting display device includes a substrate, a buffer layer, an active layer, a gate insulation layer, a protective insulating layer, a gate electrode, an insulating interlayer, source and drain electrodes, and a sub-pixel structure. The buffer layer is disposed on the substrate. The active layer is disposed on the buffer layer, and has a source region, a drain region, and a channel region. The gate insulation layer is disposed in the channel region on the active layer. The protective insulating layer is disposed on the buffer layer, the source and drain regions of the active layer, and the gate insulation layer. The gate electrode is disposed in the channel region on the protective insulating layer. The insulating interlayer is disposed on the gate electrode. The source and drain electrodes are disposed on the insulating interlayer.

公开(公告)号：US20160190328A1

公开(公告)日：2016-06-30

申请号：US14832606

申请日：2015-08-21

Applicant: Samsung Display Co., Ltd.

Inventor： Shin-Hyuk YANG ,  Eun-Hyun KIM ,  Tae-Young KIM

IPC: H01L29/786 ,  H01L29/423 ,  G02F1/1343 ,  H01L27/32 ,  G02F1/1368 ,  H01L29/24 ,  H01L29/417

CPC classification number: H01L29/7869 ,  G02F1/134309 ,  G02F1/1368 ,  H01L27/3248 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78696

Abstract: A thin film transistor including a gate electrode disposed on a substrate, a channel overlapping the gate electrode, a source electrode electrically connected to the channel, and a drain electrode electrically connected to the channel and spaced apart from the source electrode. The channel includes a first channel layer contacting the source electrode and the drain electrode, and a second channel layer disposed on the first channel layer and spaced apart from the source electrode and the drain electrode.

Abstract translation: 一种薄膜晶体管，包括设置在基板上的栅电极，与栅电极重叠的沟道，与沟道电连接的源电极，以及与该沟道电连接并与源电极间隔开的漏电极。 沟道包括与源电极和漏极接触的第一沟道层，以及设置在第一沟道层上并与源电极和漏电极隔开的第二沟道层。

公开(公告)号：US20210151538A1

公开(公告)日：2021-05-20

申请号：US17159008

申请日：2021-01-26

Applicant: Samsung Display Co., LTD.

Inventor： Shin-Hyuk YANG ,  Kwang-Soo LEE ,  Doo-Hyun KIM ,  Jee-Hoon KIM

IPC: H01L27/32 ,  H01L21/477 ,  H01L21/469 ,  H01L21/28 ,  H01L27/12

Abstract: An organic light emitting display device includes a substrate, a buffer layer, an active layer, a gate insulation layer, a protective insulating layer, a gate electrode, an insulating interlayer, source and drain electrodes, and a sub-pixel structure. The buffer layer is disposed on the substrate. The active layer is disposed on the buffer layer, and has a source region, a drain region, and a channel region. The gate insulation layer is disposed in the channel region on the active layer. The protective insulating layer is disposed on the buffer layer, the source and drain regions of the active layer, and the gate insulation layer. The gate electrode is disposed in the channel region on the protective insulating layer. The insulating interlayer is disposed on the gate electrode. The source and drain electrodes are disposed on the insulating interlayer.

公开(公告)号：US20160254334A1

公开(公告)日：2016-09-01

申请号：US14817900

申请日：2015-08-04

Applicant: Samsung Display Co., Ltd.

Inventor： Shin-Hyuk YANG ,  Tae-Young KIM ,  Hye-Hyang PARK

IPC: H01L27/32 ,  H01L29/66 ,  H01L21/4757 ,  H01L29/423 ,  H01L21/477 ,  H01L29/786 ,  H01L29/24

CPC classification number: H01L27/3262 ,  H01L21/47576 ,  H01L21/477 ,  H01L27/3248 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2227/323

Abstract: An oxide semiconductor device includes a first insulation layer pattern and a second insulation layer pattern disposed on a substrate, an active layer disposed on the first and second insulation layer patterns, the active layer including a source region including the first insulation layer pattern, a drain region including the second insulation layer pattern, and a channel region disposed between the source and drain regions, a source electrode contacting the source region, and a drain electrode contacting the drain region.

Abstract translation: 氧化物半导体器件包括第一绝缘层图案和设置在基板上的第二绝缘层图案，设置在第一绝缘层图案和第二绝缘层图案上的有源层，有源层包括包含第一绝缘层图案的源极区域，漏极 包括第二绝缘层图案的区域和设置在源极和漏极区域之间的沟道区域，与源极区域接触的源极电极和与漏极区域接触的漏极电极。