Display device
    2.
    发明授权
    Display device 有权
    显示设备

    公开(公告)号:US09075279B2

    公开(公告)日:2015-07-07

    申请号:US14086627

    申请日:2013-11-21

    Abstract: A display device includes a first substrate, a ground electrode disposed on the first substrate, a thin film transistor disposed on the first substrate, a first passivation layer disposed on the thin film transistor, a light blocking member, and a color filter disposed on the first passivation layer. A field generating electrode is disposed on the light blocking member and the color filter. The ground electrode is arranged on the first substrate in a matrix and is connected to a ground terminal.

    Abstract translation: 显示装置包括第一基板,设置在第一基板上的接地电极,设置在第一基板上的薄膜晶体管,设置在薄膜晶体管上的第一钝化层,遮光部件和布置在该第一基板上的滤色器 第一钝化层。 场致发生电极设置在遮光构件和滤色器上。 接地电极以矩阵形式布置在第一基板上并连接到接地端子。

    Liquid crystal display and method for manufacturing the same

    公开(公告)号:US10274789B2

    公开(公告)日:2019-04-30

    申请号:US15092911

    申请日:2016-04-07

    Abstract: A liquid crystal display (LCD) is provided, a liquid crystal display comprising: a first substrate and a second substrate that are opposite to each other; a liquid crystal layer arranged between the first substrate and the second substrate; a light blocking pattern including a first light blocking pattern and a second light blocking pattern arranged to extend along one direction on the first substrate; and a column spacer formed on the first light blocking pattern on the first substrate, wherein the light blocking pattern includes an open portion disposed between the first light blocking pattern and the second light blocking pattern, and formed to be spaced apart from the column spacer for a predetermined distance.

    THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    5.
    发明申请
    THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
    薄膜晶体管及其制造方法

    公开(公告)号:US20160197196A1

    公开(公告)日:2016-07-07

    申请号:US14800187

    申请日:2015-07-15

    Abstract: A thin film transistor is provided as follows. A first gate electrode and a second gate electrode are stacked on each other. A semiconductor layer is interposed between the first and second gate electrodes. A source electrode and a drain electrode are interposed between the semiconductor layer and the second gate electrode. A connection electrode connects electrically the first gate electrode and the second gate electrode. A first insulating film is interposed between the first gate electrode and the semiconductor layer. A second insulating film includes a first part interposed between the semiconductor layer and the second gate electrode and a second part interposed between the second gate electrode and the drain electrode. A third insulating film includes a first part interposed between the connection electrode and the second gate electrode.

    Abstract translation: 如下提供薄膜晶体管。 第一栅电极和第二栅电极彼此堆叠。 半导体层介于第一和第二栅电极之间。 源电极和漏电极插入在半导体层和第二栅电极之间。 连接电极电连接第一栅电极和第二栅电极。 第一绝缘膜介于第一栅电极和半导体层之间。 第二绝缘膜包括插入在半导体层和第二栅电极之间的第一部分和介于第二栅电极和漏电极之间的第二部分。 第三绝缘膜包括插入在连接电极和第二栅电极之间的第一部分。

    Liquid crystal display and method for manufacturing the same

    公开(公告)号:US10747066B2

    公开(公告)日:2020-08-18

    申请号:US16298830

    申请日:2019-03-11

    Abstract: A liquid crystal display (LCD) is provided. a liquid crystal display comprising: a first substrate and a second substrate that are opposite to each other; a liquid crystal layer arranged between the first substrate and the second substrate; a light blocking pattern including a first light blocking pattern and a second light blocking pattern arranged to extend along one direction on the first substrate; and a column spacer formed on the first light blocking pattern on the first substrate, wherein the light blocking pattern includes an open portion disposed between the first light blocking pattern and the second light blocking pattern, and formed to be spaced apart from the column spacer for a predetermined distance.

    DISPLAY DEVICE
    7.
    发明申请
    DISPLAY DEVICE 有权
    显示设备

    公开(公告)号:US20140285744A1

    公开(公告)日:2014-09-25

    申请号:US14086627

    申请日:2013-11-21

    Abstract: A display device includes a first substrate, a ground electrode disposed on the first substrate, a thin film transistor disposed on the first substrate, a first passivation layer disposed on the thin film transistor, a light blocking member, and a color filter disposed on the first passivation layer. A field generating electrode is disposed on the light blocking member and the color filter. The ground electrode is arranged on the first substrate in a matrix and is connected to a ground terminal.

    Abstract translation: 显示装置包括第一基板,设置在第一基板上的接地电极,设置在第一基板上的薄膜晶体管,设置在薄膜晶体管上的第一钝化层,遮光部件和布置在该第一基板上的滤色器 第一钝化层。 场致发生电极设置在遮光构件和滤色器上。 接地电极以矩阵形式布置在第一基板上并连接到接地端子。

    Liquid crystal display
    8.
    发明授权
    Liquid crystal display 有权
    液晶显示器

    公开(公告)号:US09575353B2

    公开(公告)日:2017-02-21

    申请号:US14250028

    申请日:2014-04-10

    Abstract: A liquid crystal display includes a first substrate, a gate line disposed on the first substrate, a data line disposed on the first substrate, a first passivation layer disposed on the gate line and the data line, a color filter disposed on the first passivation layer, a common electrode disposed on the color filter, a light blocking member disposed directly on or directly below the common electrode, a second passivation layer disposed on the common electrode and the light blocking member, and a pixel electrode disposed on the second passivation layer.

    Abstract translation: 液晶显示器包括第一基板,设置在第一基板上的栅极线,设置在第一基板上的数据线,设置在栅极线和数据线上的第一钝化层,设置在第一钝化层上的滤色器 设置在滤色器上的公共电极,直接设置在公共电极的正下方的遮光部件,设置在公共电极和遮光部件上的第二钝化层,以及配置在第二钝化层上的像素电极。

    Thin film transistor and method of manufacturing the same
    9.
    发明授权
    Thin film transistor and method of manufacturing the same 有权
    薄膜晶体管及其制造方法

    公开(公告)号:US09559210B2

    公开(公告)日:2017-01-31

    申请号:US14800187

    申请日:2015-07-15

    Abstract: A thin film transistor is provided as follows. A first gate electrode and a second gate electrode are stacked on each other. A semiconductor layer is interposed between the first and second gate electrodes. A source electrode and a drain electrode are interposed between the semiconductor layer and the second gate electrode. A connection electrode connects electrically the first gate electrode and the second gate electrode. A first insulating film is interposed between the first gate electrode and the semiconductor layer. A second insulating film includes a first part interposed between the semiconductor layer and the second gate electrode and a second part interposed between the second gate electrode and the drain electrode. A third insulating film includes a first part interposed between the connection electrode and the second gate electrode.

    Abstract translation: 如下提供薄膜晶体管。 第一栅电极和第二栅电极彼此堆叠。 半导体层介于第一和第二栅电极之间。 源电极和漏电极插入在半导体层和第二栅电极之间。 连接电极电连接第一栅电极和第二栅电极。 第一绝缘膜介于第一栅电极和半导体层之间。 第二绝缘膜包括插入在半导体层和第二栅电极之间的第一部分和介于第二栅电极和漏电极之间的第二部分。 第三绝缘膜包括插入在连接电极和第二栅电极之间的第一部分。

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