公开(公告)号：US10295874B2

公开(公告)日：2019-05-21

申请号：US15395503

申请日：2016-12-30

Applicant: Samsung Display Co., Ltd.

Inventor： Dong Gun Oh ,  Sung Hoon Lim ,  Do Hyun Jung ,  Jean Ho Song ,  Hyeon Jun Lee

IPC: G02F1/1362 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/1368 ,  G02F1/1345

Abstract: A display device may include a switching device, a gate line, a data line, a pixel electrode, and an auxiliary line. The switching device includes a first electrode, a second electrode, and a third electrode. The gate line is electrically connected to the first electrode. The data line crosses the gate line in a plan view of the display device and is electrically connected to the second electrode. The pixel electrode is electrically connected to the third electrode. The auxiliary line is electrically connected through the first gate line to the first electrode and crosses the gate line in the plan view of the display device.

公开(公告)号：US09954044B2

公开(公告)日：2018-04-24

申请号：US14693517

申请日：2015-04-22

Applicant: Samsung Display Co., Ltd.

Inventor： Dong Gun Oh ,  Seunghyun Park ,  JiEun Lee ,  Cheol-Gon Lee ,  Woongki Jeon

IPC: H01L27/32 ,  G02F1/1368 ,  G02F1/1362 ,  H01L51/52

CPC classification number: H01L27/3262 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2201/40 ,  H01L27/3248 ,  H01L27/3276 ,  H01L51/5209 ,  H01L51/5225

Abstract: A display apparatus includes a first substrate including a channel-forming area, a second substrate facing the first substrate, a thin-film transistor disposed on the first substrate, a pixel electrode electrically connected to the thin-film transistor, a gate line disposed on the first substrate and electrically connected to the thin-film transistor, a data line electrically connected to the thin-film transistor and divided into at least two portions such that the channel-forming area is disposed between the two portions of the data line, and a connection portion electrically connecting the two portions of the data line to each other, in which the thin-film transistor includes a gate electrode branched from the gate line and overlapping the channel-forming area, a semiconductor pattern overlapping the gate electrode and contacting the two portions of the data line so that the channel-forming area is disposed in the semiconductor pattern, and a drain electrode electrically connected to the pixel electrode and overlapping the semiconductor pattern.

公开(公告)号：US09754977B2

公开(公告)日：2017-09-05

申请号：US15370445

申请日：2016-12-06

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Dong Gun Oh ,  Young Gu Kang ,  Sung In Ro ,  Jae Hak Lee ,  Sung Hoon Lim ,  Woong Ki Jeon

IPC: H01L21/8234 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L27/124 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/1262 ,  H01L29/66742 ,  H01L29/78648 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/7869

Abstract: A thin film transistor is provided as follows. A first gate electrode and a second gate electrode are stacked on each other. A semiconductor layer is interposed between the first and second gate electrodes. A source electrode and a drain electrode are interposed between the semiconductor layer and the second gate electrode. A connection electrode connects electrically the first gate electrode and the second gate electrode. A first insulating film is interposed between the first gate electrode and the semiconductor layer. A second insulating film includes a first part interposed between the semiconductor layer and the second gate electrode and a second part interposed between the second gate electrode and the drain electrode. A third insulating film includes a first part interposed between the connection electrode and the second gate electrode.

公开(公告)号：US09465270B2

公开(公告)日：2016-10-11

申请号：US14560018

申请日：2014-12-04

Applicant: Samsung Display Co., Ltd.

Inventor： Seung Hyun Park ,  Woong Ki Jeon ,  Sung In Ro ,  Dong Gun Oh

IPC: G02F1/136 ,  G02F1/1362 ,  G02F1/1343

CPC classification number: G02F1/137 ,  G02F1/133345 ,  G02F1/133512 ,  G02F1/133514 ,  G02F1/134309 ,  G02F1/134363 ,  G02F1/13439 ,  G02F1/136209 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133519 ,  G02F2001/136295 ,  G02F2201/121 ,  G02F2201/123 ,  G02F2201/40

Abstract: A liquid crystal display includes: a gate line including a gate electrode; a data line including a source electrode; a drain electrode; an organic layer on the gate and data lines and the drain electrode, and a first opening defined therein; a first electrode on the organic layer, and a second opening defined therein; and a passivation layer on the first electrode, and a contact hole defined therein exposing the drain electrode. An interval taken in a first direction between a first edge of the gate electrode, the first edge parallel to a second direction in which the gate line is extended and which is different than the first direction, and a second edge of the first electrode second opening, the second edge parallel to the second direction and adjacent to the gate electrode first edge is 0 micrometer to about 6 micrometers.

Abstract translation: 液晶显示器包括：栅极线，包括栅电极; 数据线，包括源电极; 漏电极; 栅极和数据线和漏极上的有机层和限定在其中的第一开口; 有机层上的第一电极和限定在其中的第二开口; 以及第一电极上的钝化层和限定在其中的接触孔，暴露出漏电极。 在栅电极的第一边缘，平行于栅极线延伸并且不同于第一方向的第二方向的第一边缘上的第一方向上的间隔，以及第一电极第二开口的第二边缘 平行于第二方向并且与栅电极第一边缘相邻的第二边缘为0微米至约6微米。

公开(公告)号：US09804468B2

公开(公告)日：2017-10-31

申请号：US15286697

申请日：2016-10-06

Applicant: Samsung Display Co., Ltd.

Inventor： Seung Hyun Park ,  Woong Ki Jeon ,  Sung In Ro ,  Dong Gun Oh

IPC: G02F1/136 ,  G02F1/137 ,  G02F1/1362 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/1335 ,  G02F1/1368

CPC classification number: G02F1/137 ,  G02F1/133345 ,  G02F1/133512 ,  G02F1/133514 ,  G02F1/134309 ,  G02F1/134363 ,  G02F1/13439 ,  G02F1/136209 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133519 ,  G02F2001/136295 ,  G02F2201/121 ,  G02F2201/123 ,  G02F2201/40

Abstract: A liquid crystal display includes: a gate line including a gate electrode; a data line including a source electrode; a drain electrode; an organic layer on the gate and data lines and the drain electrode, and a first opening defined therein; a first electrode on the organic layer, and a second opening defined therein; and a passivation layer on the first electrode, and a contact hole defined therein exposing the drain electrode. An interval taken in a first direction between a first edge of the gate electrode, the first edge parallel to a second direction in which the gate line is extended and which is different than the first direction, and a second edge of the first electrode second opening, the second edge parallel to the second direction and adjacent to the gate electrode first edge is 0 micrometer to about 6 micrometers.

公开(公告)号：US09559210B2

公开(公告)日：2017-01-31

申请号：US14800187

申请日：2015-07-15

Applicant: Samsung Display Co. Ltd.

Inventor： Dong Gun Oh ,  Young Gu Kang ,  Sung In Ro ,  Jae Hak Lee ,  Sung Hoon Lim ,  Woong Ki Jeon

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12

CPC classification number: H01L27/124 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/1262 ,  H01L29/66742 ,  H01L29/78648 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/7869

Abstract: A thin film transistor is provided as follows. A first gate electrode and a second gate electrode are stacked on each other. A semiconductor layer is interposed between the first and second gate electrodes. A source electrode and a drain electrode are interposed between the semiconductor layer and the second gate electrode. A connection electrode connects electrically the first gate electrode and the second gate electrode. A first insulating film is interposed between the first gate electrode and the semiconductor layer. A second insulating film includes a first part interposed between the semiconductor layer and the second gate electrode and a second part interposed between the second gate electrode and the drain electrode. A third insulating film includes a first part interposed between the connection electrode and the second gate electrode.

Abstract translation: 如下提供薄膜晶体管。 第一栅电极和第二栅电极彼此堆叠。 半导体层介于第一和第二栅电极之间。 源电极和漏电极插入在半导体层和第二栅电极之间。 连接电极电连接第一栅电极和第二栅电极。 第一绝缘膜介于第一栅电极和半导体层之间。 第二绝缘膜包括插入在半导体层和第二栅电极之间的第一部分和介于第二栅电极和漏电极之间的第二部分。 第三绝缘膜包括插入在连接电极和第二栅电极之间的第一部分。

公开(公告)号：US09063386B2

公开(公告)日：2015-06-23

申请号：US13875823

申请日：2013-05-02

Applicant: Samsung Display Co., Ltd.

Inventor： Sungin Ro ,  Seunghyun Park ,  Dong Gun Oh

IPC: G02F1/1333 ,  G02F1/1345 ,  G02F1/1362

CPC classification number: G02F1/136286 ,  G02F1/13458 ,  G02F1/136259

Abstract: A thin film transistor substrate a display area that includes pixels connected to gate lines and data lines crossing the gate lines, a non-display area disposed adjacent to the display area, data pads disposed in the non-display area and each being connected to a first end of a corresponding data line of the data lines, first transistors disposed in the non-display area and each being connected to a second end of the corresponding data line of the data lines, OS pads connected to the second end of the data lines, and repair lines disposed in the non-display area along a vicinity of the display area and arranged while interposing the first transistors therebetween. The OS pads are overlapped with the first transistors and the repair lines.

Abstract translation: 一种薄膜晶体管基板，包括连接到与栅极线交叉的栅极线和数据线的像素的显示区域，与显示区域相邻设置的非显示区域，设置在非显示区域中的每个都连接到 数据线的相应数据线的第一端，布置在非显示区域中的第一晶体管，并且每个连接到数据线的对应数据线的第二端，连接到数据线的第二端的OS焊盘 以及沿着显示区域的附近设置在非显示区域中的修复线，并且在其间插入第一晶体管时布置。 OS焊盘与第一晶体管和修复线重叠。