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    Gate driver and display device including the same
    4.
    发明授权
    Gate driver and display device including the same 有权

    公开(公告)号：US11521570B2

    公开(公告)日：2022-12-06

    申请号：US16809452

    申请日：2020-03-04

    Applicant: Samsung Display Co., Ltd.

    Inventor： Sung Hoon Lim ,  Kang Nam Kim ,  Seok Hwan Bang ,  Sung Hwan Won ,  Woo Geun Lee ,  Kyu Sik Cho ,  Soo Jung Chae

    IPC: G09G3/36

    Abstract: A gate driver for a display device includes: a clock signal line to transfer a clock signal; and a plurality of stages to sequentially output a gate signal based upon the clock signal in response to a carry signal. The plurality of stages include a plurality of thin film transistors, and at least one of the plurality of thin film transistors includes a thin film transistor including an oxide semiconductor. The at least one thin film transistor includes a first gate electrode and a second gate electrode disposed in different layers, the oxide semiconductor is disposed between the first gate electrode and the second gate electrode, and the first gate electrode and the second gate electrode are connected to receive a common voltage signal.

    Scan driver and display device having the same
    6.
    发明授权
    Scan driver and display device having the same 有权

    公开(公告)号：US11626060B2

    公开(公告)日：2023-04-11

    申请号：US17478825

    申请日：2021-09-17

    Applicant: Samsung Display Co., Ltd.

    Inventor： Kang Nam Kim ,  Sung Hoon Lim ,  Woo Geun Lee ,  Kyu Sik Cho ,  Jae Beom Choi

    IPC: G09G3/3266 ,  G09G3/20

    Abstract: A scan driver includes a plurality of stages. An nth (n is a natural number) stage among the stages includes: a first and a second input circuit for controlling a voltage of a first node in response to a carry signal of a previous stage and a next stage, respectively; a first output circuit for outputting an nth carry signal corresponding to a carry clock signal in response to the voltage of the first node; a second output circuit for outputting an nth scan and an nth sensing signal corresponding to a scan and a sensing clock signal, respectively, in response to the voltage of the first node; and a sampling circuit for storing the carry signal of the previous stage in response to a first select signal, and for supplying a control voltage to the first node in response to a second select signal and the stored carry signal.

    Thin film transistor and method of manufacturing the same
    7.
    发明授权
    Thin film transistor and method of manufacturing the same 有权
    薄膜晶体管及其制造方法

    公开(公告)号：US09559210B2

    公开(公告)日：2017-01-31

    申请号：US14800187

    申请日：2015-07-15

    Applicant: Samsung Display Co. Ltd.

    Inventor： Dong Gun Oh ,  Young Gu Kang ,  Sung In Ro ,  Jae Hak Lee ,  Sung Hoon Lim ,  Woong Ki Jeon

    IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12

    CPC classification number: H01L27/124 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/1262 ,  H01L29/66742 ,  H01L29/78648 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/7869

    Abstract: A thin film transistor is provided as follows. A first gate electrode and a second gate electrode are stacked on each other. A semiconductor layer is interposed between the first and second gate electrodes. A source electrode and a drain electrode are interposed between the semiconductor layer and the second gate electrode. A connection electrode connects electrically the first gate electrode and the second gate electrode. A first insulating film is interposed between the first gate electrode and the semiconductor layer. A second insulating film includes a first part interposed between the semiconductor layer and the second gate electrode and a second part interposed between the second gate electrode and the drain electrode. A third insulating film includes a first part interposed between the connection electrode and the second gate electrode.

    Abstract translation: 如下提供薄膜晶体管。 第一栅电极和第二栅电极彼此堆叠。 半导体层介于第一和第二栅电极之间。 源电极和漏电极插入在半导体层和第二栅电极之间。 连接电极电连接第一栅电极和第二栅电极。 第一绝缘膜介于第一栅电极和半导体层之间。 第二绝缘膜包括插入在半导体层和第二栅电极之间的第一部分和介于第二栅电极和漏电极之间的第二部分。 第三绝缘膜包括插入在连接电极和第二栅电极之间的第一部分。

    Liquid crystal display device and manufacturing method thereof
    8.
    发明授权
    Liquid crystal display device and manufacturing method thereof 有权

    公开(公告)号：US10303027B2

    公开(公告)日：2019-05-28

    申请号：US15483749

    申请日：2017-04-10

    Applicant: Samsung Display Co., Ltd

    Inventor： Duk Sung Kim ,  Seung Hyun Park ,  Jun Ho Song ,  Sung Hoon Lim

    IPC: G02F1/136 ,  G02F1/1368 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/1362

    Abstract: A liquid crystal display device comprising: a substrate; a gate line that is disposed on the substrate and extends in a first direction; a first insulating film that is disposed on the gate line; a semiconductor pattern that is disposed on the first insulating film; a first transparent electrode that is disposed on the semiconductor pattern, and has a first electrode and a second electrode being spaced apart from each other; a second insulating film that is disposed on the first transparent electrode and partially exposes the first electrode; a data line disposed on the second insulating film and extends in a second direction different from the first direction; a second transparent electrode that is disposed on the second insulating film and at least partially overlaps the second electrode; and a connecting electrode in direct contact with a portion of the exposed first electrode and the data line.

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