公开(公告)号：US09660186B2

公开(公告)日：2017-05-23

申请号：US15175463

申请日：2016-06-07

Applicant: Samsung ELectronics Co., Ltd.

Inventor： Jinhye Bae ,  Wonjun Lee ,  Yoonsung Han ,  Hoon Han ,  Kyu-Man Hwang ,  Yongsun Ko

IPC: H01L21/00 ,  H01L43/12 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L21/66

CPC classification number: H01L43/12 ,  H01L22/12 ,  H01L27/101 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: Provided is a method of manufacturing a semiconductor device. The method of manufacturing the semiconductor device includes forming magneto tunnel layers, forming a hard mask on the magneto tunnel layers, etching the magneto tunnel layers to form a magneto tunnel junction, wherein etching by-products are formed on sidewalls of the magneto tunnel junction, performing chemical treatment on the etching by-products to convert the etching by-products into a chemical reactant; and inspecting the chemical reactant.

公开(公告)号：US10164173B2

公开(公告)日：2018-12-25

申请号：US15658780

申请日：2017-07-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyu-Man Hwang ,  Shi-Jung Kim ,  Mi-Lim Park ,  Jun-Soo Bae ,  Seung-Woo Lee

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/12

Abstract: Magnetic random access memory (MRAM) devices, and methods of manufacturing the same, include at least one first magnetic material pattern on a substrate, at least one second magnetic material pattern on the at least one first magnetic material pattern, and at least one tunnel barrier layer pattern between the at least one first magnetic material pattern and the at least one second magnetic material pattern. A width of a top surface of the at least one first magnetic material pattern may be less than a width of a bottom surface of the at least one second magnetic material pattern.