公开(公告)号：US09660186B2

公开(公告)日：2017-05-23

申请号：US15175463

申请日：2016-06-07

Applicant: Samsung ELectronics Co., Ltd.

Inventor： Jinhye Bae ,  Wonjun Lee ,  Yoonsung Han ,  Hoon Han ,  Kyu-Man Hwang ,  Yongsun Ko

IPC: H01L21/00 ,  H01L43/12 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L21/66

CPC classification number: H01L43/12 ,  H01L22/12 ,  H01L27/101 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: Provided is a method of manufacturing a semiconductor device. The method of manufacturing the semiconductor device includes forming magneto tunnel layers, forming a hard mask on the magneto tunnel layers, etching the magneto tunnel layers to form a magneto tunnel junction, wherein etching by-products are formed on sidewalls of the magneto tunnel junction, performing chemical treatment on the etching by-products to convert the etching by-products into a chemical reactant; and inspecting the chemical reactant.

公开(公告)号：US20220350253A1

公开(公告)日：2022-11-03

申请号：US17569556

申请日：2022-01-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： HYOJIN YUN ,  Seungwon Kim ,  Taeyoung Kim ,  Woojung Park ,  Jinhye Bae ,  Hyunseop Shin ,  Mintae Lee ,  Hoon Han ,  Moonyoung Kim ,  Moonchang Kim ,  Cheolmo Yang ,  Yunseok Choi

IPC: G03F7/42 ,  B08B3/04 ,  C11D3/04 ,  H01L21/02

Abstract: A photoresist-removing composition includes a polar organic solvent, an alkyl ammonium hydroxide, an aliphatic amine not including a hydroxy group, and a monovalent alcohol. To manufacture a semiconductor device, a photoresist pattern may be formed on a substrate, and the photoresist-removing composition may then be applied to the photoresist pattern. To manufacture a semiconductor package, a photoresist pattern including a plurality of via holes may be formed on a substrate. A plurality of conductive posts including a metal may be formed inside the plurality of via holes, and the photoresist pattern may be removed by applying a photoresist-removing composition of the inventive concept to the photoresist pattern. A semiconductor chip may be adhered to the substrate between the respective conductive posts.

公开(公告)号：US08853660B2

公开(公告)日：2014-10-07

申请号：US13668489

申请日：2012-11-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： JaeJong Han ,  Sungun Kwon ,  Jinhye Bae ,  Kongsoo Lee ,  Seong Hoon Jeong ,  Yoongoo Kang ,  Ho-Kyun An

IPC: H01L29/02

CPC classification number: H01L45/1233 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/2445 ,  H01L45/06 ,  H01L45/141

Abstract: Semiconductor devices include lower interconnections, upper interconnections crossing over the lower interconnections, selection components disposed at crossing points of the lower interconnections and the upper interconnections, respectively, and memory components disposed between the selection components and the upper interconnections. Each of the selection components may include a semiconductor pattern having a first sidewall and a second sidewall. The first sidewall of the semiconductor pattern may have a first upper width and a first lower width that is greater than the first upper width. The second sidewall of the semiconductor pattern may have a second upper width and a second lower width that is substantially equal to the second upper width.

Abstract translation: 半导体器件包括下互连，在下互连上交叉的上互连，分别设置在下互连和上互连的交叉点处的选择部件以及设置在选择部件和上互连之间的存储器部件。 每个选择部件可以包括具有第一侧壁和第二侧壁的半导体图案。 半导体图案的第一侧壁可以具有大于第一上部宽度的第一上部宽度和第一下部宽度。 半导体图案的第二侧壁可以具有基本上等于第二上部宽度的第二上部宽度和第二下部宽度。

公开(公告)号：US12044974B2

公开(公告)日：2024-07-23

申请号：US17569556

申请日：2022-01-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyojin Yun ,  Seungwon Kim ,  Taeyoung Kim ,  Woojung Park ,  Jinhye Bae ,  Hyunseop Shin ,  Mintae Lee ,  Hoon Han ,  Moonyoung Kim ,  Moonchang Kim ,  Cheolmo Yang ,  Yunseok Choi

IPC: G03F7/42 ,  B08B3/04 ,  C11D3/04 ,  H01L21/02

CPC classification number: G03F7/425 ,  B08B3/04 ,  C11D3/044 ,  H01L21/0206

Abstract: A photoresist-removing composition includes a polar organic solvent, an alkyl ammonium hydroxide, an aliphatic amine not including a hydroxy group, and a monovalent alcohol. To manufacture a semiconductor device, a photoresist pattern may be formed on a substrate, and the photoresist-removing composition may then be applied to the photoresist pattern. To manufacture a semiconductor package, a photoresist pattern including a plurality of via holes may be formed on a substrate. A plurality of conductive posts including a metal may be formed inside the plurality of via holes, and the photoresist pattern may be removed by applying a photoresist-removing composition of the inventive concept to the photoresist pattern. A semiconductor chip may be adhered to the substrate between the respective conductive posts.

公开(公告)号：US11380537B2

公开(公告)日：2022-07-05

申请号：US16265709

申请日：2019-02-01

Applicant: Samsung Electronics Co., Ltd. ,  Soulbrain Co., Ltd.

Inventor： Hoyoung Kim ,  Hyo-Sun Lee ,  Soojin Kim ,  Keonyoung Kim ,  Jinhye Bae ,  Hoon Han ,  Tae Soo Kwon ,  Jung Hun Lim

IPC: C11D3/04 ,  C11D3/30 ,  C11D3/44 ,  H01L21/02 ,  C11D7/26 ,  C11D7/08 ,  C11D7/32 ,  C11D11/00 ,  H01L21/683 ,  H01L23/00 ,  H01L21/304 ,  H01L21/306

Abstract: Embodiments of the inventive concepts provide a method of manufacturing a semiconductor device and a cleaning composition for an adhesive layer. The method includes preparing a semiconductor substrate to which an adhesive layer adheres, removing the adhesive layer from the semiconductor substrate, and applying a cleaning composition to the semiconductor substrate to remove a residue of the adhesive layer. The cleaning composition includes a solvent including a ketone compound and having a content that is equal to or greater than 40 wt % and less thaadminn 90 wt %, quaternary ammonium salt, and primary amine.

公开(公告)号：US10332740B2

公开(公告)日：2019-06-25

申请号：US15841946

申请日：2017-12-14

Applicant: Samsung Electronics Co., Ltd. ,  Soulbrain Co., Ltd.

Inventor： Hoyoung Kim ,  Hyo-Sun Lee ,  Soojin Kim ,  Keonyoung Kim ,  Jinhye Bae ,  Hoon Han ,  Tae Soo Kwon ,  Jung Hun Lim

IPC: H01L21/44 ,  H01L21/02 ,  C11D7/26 ,  C11D7/08 ,  C11D7/32 ,  C11D11/00 ,  H01L21/683 ,  H01L23/00 ,  H01L21/304 ,  H01L21/306

Abstract: Embodiments of the inventive concepts provide a method of manufacturing a semiconductor device and a cleaning composition for an adhesive layer. The method includes preparing a semiconductor substrate to which an adhesive layer adheres, removing the adhesive layer from the semiconductor substrate, and applying a cleaning composition to the semiconductor substrate to remove a residue of the adhesive layer. The cleaning composition includes a solvent including a ketone compound and having a content that is equal to or greater than 40 wt % and less than 90 wt %, quaternary ammonium salt, and primary amine.

公开(公告)号：US10038136B2

公开(公告)日：2018-07-31

申请号：US15350009

申请日：2016-11-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungyoon Chung ,  Jinhye Bae ,  Hyungjoon Kwon ,  Jongchul Park ,  Wonjun Lee

IPC: H01L43/02 ,  H01L43/12 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A method of manufacturing a semiconductor device may include forming a material layer on a substrate, performing a selective oxidation process to form a capping oxide layer on a first surface of the material layer, wherein a second surface of the material layer is not oxidized, and etching the material layer through the second surface to form a material pattern. An etch rate of the capping oxide layer is less than an etch rate of the material layer. A semiconductor device may include a lower electrode on a substrate, a data storage part on a top surface of the lower electrode, an upper electrode on the data storage part, and a capping oxide layer arranged on at least a portion of a top surface of the upper electrode. The capping oxide layer may include an oxide formed by oxidation of an upper surface of the upper electrode.

公开(公告)号：US20130146830A1

公开(公告)日：2013-06-13

申请号：US13668489

申请日：2012-11-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： JaeJong Han ,  Sungun Kwon ,  Jinhye Bae ,  Kongsoo Lee ,  Seong Hoon Jeong ,  Yoongoo Kang ,  Hy-Kyun An

IPC: H01L45/00 ,  H01L29/82 ,  H01L29/06

CPC classification number: H01L45/1233 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/2445 ,  H01L45/06 ,  H01L45/141

Abstract: Semiconductor devices include lower interconnections, upper interconnections crossing over the lower interconnections, selection components disposed at crossing points of the lower interconnections and the upper interconnections, respectively, and memory components disposed between the selection components and the upper interconnections. Each of the selection components may include a semiconductor pattern having a first sidewall and a second sidewall. The first sidewall of the semiconductor pattern may have a first upper width and a first lower width that is greater than the first upper width. The second sidewall of the semiconductor pattern may have a second upper width and a second lower width that is substantially equal to the second upper width.

Abstract translation: 半导体器件包括下互连，在下互连上交叉的上互连，分别设置在下互连和上互连的交叉点处的选择部件以及设置在选择部件和上互连之间的存储器部件。 每个选择部件可以包括具有第一侧壁和第二侧壁的半导体图案。 半导体图案的第一侧壁可以具有大于第一上部宽度的第一上部宽度和第一下部宽度。 半导体图案的第二侧壁可以具有基本上等于第二上部宽度的第二上部宽度和第二下部宽度。