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    Semiconductor device including a data storage material pattern
    3.
    发明授权
    Semiconductor device including a data storage material pattern 有权

    公开(公告)号：US11217748B2

    公开(公告)日：2022-01-04

    申请号：US16807245

    申请日：2020-03-03

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Youngtak Kim ,  Sangjine Park ,  Wonjun Lee ,  Hyeyeong Seo ,  Jaeuk Shin

    IPC: H01L45/00

    Abstract: A semiconductor device, includes: a first conductive structure on a substrate; a second conductive structure on the first conductive structure; and a first memory cell structure between the first conductive structure and the second conductive structure, wherein the first memory cell structure includes: a switching material pattern on the first conductive structure; a data storage material pattern on the switching material pattern; and an upper conductive pattern on the data storage material pattern, wherein a first width of a lower region of the data storage material pattern is less than a first width of the switching material pattern, and wherein a first width of the upper conductive pattern is less than a width of an upper region of the data storage material pattern.

    Method of fabricating a three-dimentional semiconductor memory device
    7.
    发明授权
    Method of fabricating a three-dimentional semiconductor memory device 有权
    制造三维半导体存储器件的方法

    公开(公告)号：US08728893B2

    公开(公告)日：2014-05-20

    申请号：US13775453

    申请日：2013-02-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Byoungkeun Son ,  Jinho Kim ,  Hansoo Kim ,  Wonjun Lee ,  Daehyun Jang

    IPC: H01L21/336

    CPC classification number: H01L27/11551 ,  H01L27/11556 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/42336 ,  H01L29/42352 ,  H01L29/4236 ,  H01L29/66666 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7827 ,  H01L29/7889 ,  H01L29/7926

    Abstract: A method of fabricating a semiconductor memory device includes alternately and repeatedly stacking sacrificial layers and insulating layers on a substrate, forming an active pattern penetrating the sacrificial layers and the insulating layers, continuously patterning the insulating layers and the sacrificial layers to form a trench, removing the sacrificial layers exposed in the trench to form recess regions exposing a sidewall of the active pattern, forming an information storage layer on the substrate, forming a gate conductive layer on the information storage layer, such that the gate conductive layer fills the recess regions and defines an empty region in the trench, the empty region being surrounded by the gate conductive layer, and performing an isotropic etch process with respect to the gate conductive layer to form gate electrodes in the recess regions, such that the gate electrodes are separated from each other.

    Abstract translation: 一种制造半导体存储器件的方法包括在衬底上交替地和重复堆叠牺牲层和绝缘层，形成穿透牺牲层和绝缘层的有源图案，连续地图案化绝缘层和牺牲层以形成沟槽，去除 所述牺牲层暴露在所述沟槽中以形成暴露所述有源图案的侧壁的凹陷区域，在所述衬底上形成信息存储层，在所述信息存储层上形成栅极导电层，使得所述栅极导电层填充所述凹部区域， 在沟槽中限定空区域，空区域被栅极导电层包围，并且相对于栅极导电层执行各向同性蚀刻处理，以在凹陷区域中形成栅电极，使得栅电极与每个栅电极分离 其他。

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