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1.发明申请公开(公告)号：US20160104544A1
公开(公告)日：2016-04-14
申请号：US14854251
申请日：2015-09-15
Applicant: Samsung Electronics Co., LTD.
Inventor： Sebastian Schafer , Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Robert Beach , Zheng Duan
CPC classification number: G11C11/161 , G01K7/36 , G01R33/098 , G01R33/14 , G11C7/04 , G11C11/16 , G11C11/1695 , G11C29/50 , G11C2029/5002
Abstract: A method for measuring a temperature of magnetic junction switchable using spin transfer. The magnetic junction includes at least one magnetic layer. The method includes measuring a temperature variation of at least one magnetic characteristic for the magnetic layer(s) versus temperature. The method also includes measuring a bias variation in the magnetic characteristic versus an electrical bias for the magnetic junction. This measurement is performed such that spin transfer torque-induced variation(s) in the magnetic characteristic(s) are accounted for. The temperature versus the electrical bias for the magnetic junction is determined based on the temperature variation and the bias variation.
Abstract translation: 使用自旋转移测量可以切换的磁结温度的方法。 磁结包括至少一个磁性层。 该方法包括测量磁层对于温度的至少一个磁特性的温度变化。 该方法还包括测量磁特性相对于磁结的电偏压的偏差变化。 进行这种测量，使得考虑到磁特性中的自旋转矩扭矩引起的变化。 基于温度变化和偏差变化确定磁结的温度与电偏差。
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公开(公告)号：US20190273201A1
公开(公告)日：2019-09-05
申请号：US15968471
申请日：2018-05-01
Applicant: Samsung Electronics Co., LTD.
Inventor： Zheng Duan , Dmytro Apalkov , Vladimir Nikitin
Abstract: A magnetic junction, a memory using the magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes first and second reference layers, a main barrier layer having a first thickness, a free layer, an engineered secondary barrier layer and a second reference layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The main barrier layer is between the first reference layer and the free layer. The secondary barrier layer is between the free layer and the second reference layer. The engineered secondary barrier layer has a resistance, a second thickness less than the first thickness and a plurality of regions having a reduced resistance less than the resistance. The free and reference layers each has a perpendicular magnetic anisotropy energy and an out-of-plane demagnetization energy less than the perpendicular magnetic anisotropy energy.
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Patent Agency Ranking
公开(公告)号：US10276226B2
公开(公告)日：2019-04-30
申请号：US16005595
申请日：2018-06-11
Applicant: Samsung Electronics Co., LTD.
Inventor： Sebastian Schafer , Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Robert Beach , Zheng Duan
Abstract: A method for measuring a temperature of magnetic junction switchable using spin transfer. The magnetic junction includes at least one magnetic layer. The method includes measuring a temperature variation of at least one magnetic characteristic for the magnetic layer(s) versus temperature. The method also includes measuring a bias variation in the magnetic characteristic versus an electrical bias for the magnetic junction. This measurement is performed such that spin transfer torque-induced variation(s) in the magnetic characteristic(s) are accounted for. The temperature versus the electrical bias for the magnetic junction is determined based on the temperature variation and the bias variation.
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公开(公告)号：US10381550B1
公开(公告)日：2019-08-13
申请号：US15968471
申请日：2018-05-01
Applicant: Samsung Electronics Co., LTD.
Inventor： Zheng Duan , Dmytro Apalkov , Vladimir Nikitin
Abstract: A magnetic junction, a memory using the magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes first and second reference layers, a main barrier layer having a first thickness, a free layer, an engineered secondary barrier layer and a second reference layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The main barrier layer is between the first reference layer and the free layer. The secondary barrier layer is between the free layer and the second reference layer. The engineered secondary barrier layer has a resistance, a second thickness less than the first thickness and a plurality of regions having a reduced resistance less than the resistance. The free and reference layers each has a perpendicular magnetic anisotropy energy and an out-of-plane demagnetization energy less than the perpendicular magnetic anisotropy energy.
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公开(公告)号：US10297300B2
公开(公告)日：2019-05-21
申请号：US14854251
申请日：2015-09-15
Applicant: Samsung Electronics Co., LTD.
Inventor： Sebastian Schafer , Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Robert Beach , Zheng Duan
Abstract: A method for measuring a temperature of magnetic junction switchable using spin transfer. The magnetic junction includes at least one magnetic layer. The method includes measuring a temperature variation of at least one magnetic characteristic for the magnetic layer(s) versus temperature. The method also includes measuring a bias variation in the magnetic characteristic versus an electrical bias for the magnetic junction. This measurement is performed such that spin transfer torque-induced variation(s) in the magnetic characteristic(s) are accounted for. The temperature versus the electrical bias for the magnetic junction is determined based on the temperature variation and the bias variation.
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公开(公告)号：US20180294024A1
公开(公告)日：2018-10-11
申请号：US16005595
申请日：2018-06-11
Applicant: Samsung Electronics Co., LTD.
Inventor： Sebastian Schafer , Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Robert Beach , Zheng Duan
CPC classification number: G11C11/161 , G01K7/36 , G01R33/098 , G01R33/14 , G11C7/04 , G11C11/16 , G11C11/1695 , G11C29/50 , G11C2029/5002
Abstract: A method for measuring a temperature of magnetic junction switchable using spin transfer. The magnetic junction includes at least one magnetic layer. The method includes measuring a temperature variation of at least one magnetic characteristic for the magnetic layer(s) versus temperature. The method also includes measuring a bias variation in the magnetic characteristic versus an electrical bias for the magnetic junction. This measurement is performed such that spin transfer torque-induced variation(s) in the magnetic characteristic(s) are accounted for. The temperature versus the electrical bias for the magnetic junction is determined based on the temperature variation and the bias variation.
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7.发明申请公开(公告)号：US20190319182A1
公开(公告)日：2019-10-17
申请号：US16453854
申请日：2019-06-26
Applicant: Samsung Electronics Co., Ltd.
Inventor： Zheng Duan , Dmytro Apalkov , Vladimir Nikitin
Abstract: A magnetic junction, a memory using the magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes first and second reference layers, a main barrier layer, a free layer, an engineered secondary barrier layer and a second reference layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The main barrier layer is between the first reference layer and the free layer. The secondary barrier layer is between the free layer and the second reference layer. The engineered secondary barrier layer has a resistance and a plurality of regions having a reduced resistance less than the resistance. The free and reference layers each has a perpendicular magnetic anisotropy energy and an out-of-plane demagnetization energy less than the perpendicular magnetic anisotropy energy.
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