公开(公告)号：US20240395845A1

公开(公告)日：2024-11-28

申请号：US18796684

申请日：2024-08-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Chul LEE ,  Beomsuk LEE ,  Minho JANG ,  Kwansik CHO

IPC: H01L27/146

Abstract: An image sensor includes a first chip including a pixel region, a pad region, and an optical black region interposed between the pixel region and the pad region, and a second chip being in contact with a first surface of the first chip and including circuits for driving the first chip. The first chip includes a first substrate, a device isolation portion disposed in the first substrate and defining unit pixels, an interlayer insulating layer interposed between the first substrate and the second chip, a connection wiring structure disposed in the interlayer insulating layer, and a connection contact plug disposed in the interlayer insulating layer and connecting the connection wiring structure to the device isolation portion in the optical black region. The image sensor further includes a conductive pad disposed in the first chip or the second chip.

公开(公告)号：US20190131340A1

公开(公告)日：2019-05-02

申请号：US16003339

申请日：2018-06-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changhwa KIM ,  JungHun KIM ,  Sang-Su PARK ,  Beomsuk LEE ,  Gang ZHANG ,  Jaesung HUR

IPC: H01L27/146 ,  H01L27/148 ,  H01L25/16 ,  G02B5/20 ,  H04N5/335

CPC classification number: H01L27/14647 ,  G02B5/20 ,  H01L25/167 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14665 ,  H01L27/14689 ,  H01L27/14812 ,  H04N5/335

Abstract: Disclosed is an image sensor including a substrate having a first surface and a second surface opposite to each other, a first photoelectric conversion region and a second photoelectric conversion region in the substrate, a through electrode between the first and second photoelectric conversion regions, an insulation structure on the second surface of the substrate, a first color filter and a second color filter respectively provided on the first and second photoelectric conversion regions, and a photoelectric conversion layer on the insulation structure and electrically connected to the through electrode. The through electrode include a first end adjacent to the first surface and a second end adjacent to the second surface. The first end has a non-planar shape.

公开(公告)号：US20240258352A1

公开(公告)日：2024-08-01

申请号：US18410259

申请日：2024-01-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongchan KIM ,  Byoungho KWON ,  Beomsuk LEE

IPC: H01L27/146

CPC classification number: H01L27/14629 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636

Abstract: An image sensor including a substrate including an active pixel region and a peripheral region surrounding the active pixel region; a metal layer on a peripheral region of the substrate; a lower reflective layer on the substrate and the metal layer; a resonance layer on the lower reflective layer; and an upper reflective layer on the resonance layer, wherein the resonance layer has a first thickness on the active pixel region in a vertical direction perpendicular to an upper surface of the substrate and a second thickness in the vertical direction on the peripheral region, and the first thickness is greater than the second thickness.

公开(公告)号：US20220271077A1

公开(公告)日：2022-08-25

申请号：US17668524

申请日：2022-02-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongchul LEE ,  Jinyoung KIM ,  Beomsuk LEE ,  Kwansik CHO ,  Hochul JI

IPC: H01L27/146

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface. The first surface includes an element isolation trench. An element isolation layer is arranged inside the element isolation trench. The element isolation layer defines an active region. A gate electrode is arranged on the first surface of the semiconductor substrate. An interlayer insulating layer is arranged on the first surface of the semiconductor substrate and covers the gate electrode. A ground contact is configured to penetrate the element isolation layer and the interlayer insulating layer and contacts the semiconductor substrate. A color filter is arranged on the second surface of the semiconductor substrate.

公开(公告)号：US20210175286A1

公开(公告)日：2021-06-10

申请号：US17034316

申请日：2020-09-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangchun PARK ,  Kwansik KIM ,  Hongki KIM ,  Sangsu PARK ,  Beomsuk LEE ,  Taeyon LEE ,  Gwideok Ryan LEE

IPC: H01L27/30 ,  H01L27/146 ,  H01L51/44

Abstract: An image sensor includes a first substrate having a first surface and a second surface opposite to the first surface. The first substrate includes an active pixel, region having a plurality of active pixels. A plurality of lower electrode structures is disposed on the second surface of the first substrate and corresponds to the plurality of active pixels, An upper electrode is disposed on the plurality of lower electrode structures. An organic photoelectric conversion layer is disposed between the plurality of lower electrode structures and the upper electrode. A second substrate is disposed on the first surface of the first substrate. A driving circuit configured to drive the plurality of active pixels is disposed on the second substrate. The plurality of lower electrode structures includes a first barrier layer, a reflective layer disposed on the first barrier layer and a second barrier layer disposed on the reflective layer.

公开(公告)号：US20200251521A1

公开(公告)日：2020-08-06

申请号：US16857839

申请日：2020-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang-Min LEE ,  Seokjin KWON ,  Hyeyun PARK ,  Beomsuk LEE ,  Dongmo IM

IPC: H01L27/146 ,  H04N5/374

Abstract: An image sensor includes a substrate having a first surface and a second surface opposite to each other, a first floating diffusion region provided in the substrate and being adjacent to the first surface, a through-electrode provided in the substrate and electrically connected to the first floating diffusion region, an insulating structure, a bottom electrode, a photoelectric conversion layer, and a top electrode sequentially stacked on the second surface, a color filter buried in the insulating structure, and a top contact plug penetrating the insulating structure to connect the bottom electrode to the through-electrode.

公开(公告)号：US20220149101A1

公开(公告)日：2022-05-12

申请号：US17377792

申请日：2021-07-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Chul LEE ,  Beomsuk LEE ,  Minho JANG ,  Kwansik CHO

IPC: H01L27/146

Abstract: An image sensor includes a first chip including a pixel region, a pad region, and an optical black region interposed between the pixel region and the pad region, and a second chip being in contact with a first surface of the first chip and including circuits for driving the first chip. The first chip includes a first substrate, a device isolation portion disposed in the first substrate and defining unit pixels, an interlayer insulating layer interposed between the first substrate and the second chip, a connection wiring structure disposed in the interlayer insulating layer, and a connection contact plug disposed in the interlayer insulating layer and connecting the connection wiring structure to the device isolation portion in the optical black region. The image sensor further includes a conductive pad disposed in the first chip or the second chip.

公开(公告)号：US20220139995A1

公开(公告)日：2022-05-05

申请号：US17577615

申请日：2022-01-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changhwa KIM ,  JungHun KIM ,  Sang-Su PARK ,  Beomsuk LEE ,  Gang ZHANG ,  Jaesung HUR

IPC: H01L27/146 ,  H01L27/148 ,  H04N5/335 ,  G02B5/20 ,  H01L25/16

Abstract: Disclosed is an image sensor including a substrate having a first surface and a second surface opposite to each other, a first photoelectric conversion region and a second photoelectric conversion region in the substrate, a through electrode between the first and second photoelectric conversion regions, an insulation structure on the second surface of the substrate, a first color filter and a second color filter respectively provided on the first and second photoelectric conversion regions, and a photoelectric conversion layer on the insulation structure and electrically connected to the through electrode. The through electrode include a first end adjacent to the first surface and a second end adjacent to the second surface. The first end has a non-planar shape.

公开(公告)号：US20200176504A1

公开(公告)日：2020-06-04

申请号：US16787408

申请日：2020-02-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changhwa KIM ,  JungHun KIM ,  Sang-Su PARK ,  Beomsuk LEE ,  Gang ZHANG ,  Jaesung HUR

IPC: H01L27/146 ,  H01L25/16 ,  G02B5/20 ,  H04N5/335 ,  H01L27/148

Abstract: Disclosed is an image sensor including a substrate having a first surface and a second surface opposite to each other, a first photoelectric conversion region and a second photoelectric conversion region in the substrate, a through electrode between the first and second photoelectric conversion regions, an insulation structure on the second surface of the substrate, a first color filter and a second color filter respectively provided on the first and second photoelectric conversion regions, and a photoelectric conversion layer on the insulation structure and electrically connected to the through electrode. The through electrode include a first end adjacent to the first surface and a second end adjacent to the second surface. The first end has a non-planar shape.