公开(公告)号：US20150050793A1

公开(公告)日：2015-02-19

申请号：US14286108

申请日：2014-05-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Jine PARK ,  Bo-Un YOON ,  Young-Sang YOUN ,  Jeong-Nam HAN ,  Kee-Sang KWON ,  Doo-Sung YUN ,  Byung-Kwon CHO ,  Ji-Hoon CHA

IPC: H01L29/66

CPC classification number: H01L29/66477 ,  H01L21/02063 ,  H01L21/31116 ,  H01L21/76804 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76897 ,  H01L29/41791 ,  H01L29/66553 ,  H01L29/66795 ,  H01L2221/1063

Abstract: A method for forming a trench includes etching an oxide layer to form a trench therein, conformally forming a first reaction layer along a surface of the trench, the first reaction layer including a first region on an upper portion of the trench and a second region on a lower portion of the trench, forming a barrier layer by reacting a first amount of etching gas with the first region of the first reaction layer, and etching the oxide layer on a lower portion of the second region by reacting a second amount of etching gas with the second region of the first reaction layer, the second amount of etching gas being greater than the first amount of etching gas.

Abstract translation: 一种用于形成沟槽的方法包括蚀刻氧化物层以在其中形成沟槽，沿着沟槽的表面共形形成第一反应层，第一反应层包括沟槽上部的第一区域和第二区域 沟槽的下部，通过使第一量的蚀刻气体与第一反应层的第一区域反应形成阻挡层，并且通过使第二量的蚀刻气体反应来蚀刻第二区域的下部的氧化物层 与第一反应层的第二区域相比，第二量的蚀刻气体大于第一量的蚀刻气体。

公开(公告)号：US20200227253A1

公开(公告)日：2020-07-16

申请号：US16561078

申请日：2019-09-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjine PARK ,  Byung-Kwon CHO ,  Jihoon JEONG ,  Youngtak KIM ,  Yongsun KO ,  Seulgee JEON

IPC: H01L21/02 ,  H01L21/67

Abstract: A supercritical drying apparatus and a method of drying a substrate, the apparatus including a drying chamber configured to receive a supercritical fluid and to dry a substrate; a chuck in the drying chamber, the chuck being configured to receive the substrate; and a particle remover in the drying chamber, the particle remover being configured to remove dry particles from the substrate by heating the substrate with radiant heat.

公开(公告)号：US20190096712A1

公开(公告)日：2019-03-28

申请号：US15978303

申请日：2018-05-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Jine PARK ,  Byung-Kwon CHO ,  Yong-Jhin CHO ,  Yong-Sun KO ,  Yeon-Jin GIL ,  Kwang-Wook LEE

IPC: H01L21/67 ,  H01L21/302 ,  H01L21/66

CPC classification number: H01L21/67092 ,  H01L21/302 ,  H01L21/6719 ,  H01L21/67253 ,  H01L22/12

Abstract: Disclosed are a supercritical process chamber and an apparatus having the same. The process chamber includes a body frame having a protrusion protruding in an upward vertical direction from a first surface of the body frame and a recess defined by the protrusion and the first surface of the body frame; a cover frame; a buffer chamber arranged between the body frame and the cover frame; and a connector. The buffer chamber includes an inner vessel detachably coupled to the body frame providing a chamber space in the recess and an inner cover detachably coupled to the cover frame. The inner cover is in contact with a first surface of the inner vessel enclosing the chamber space from surroundings. The connector couples the body frame and the cover frame having the buffer chamber arranged therebetween such that the enclosed chamber space is transformed into a process space in which the supercritical process is performed.

公开(公告)号：US20160359017A1

公开(公告)日：2016-12-08

申请号：US15239200

申请日：2016-08-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Jine PARK ,  Bo-Un YOON ,  Ha-Young JEON ,  Byung-Kwon CHO ,  Jeong-Nam HAN

IPC: H01L29/66 ,  H01L29/49 ,  H01L27/088 ,  H01L29/423 ,  H01L29/78 ,  H01L21/28

CPC classification number: H01L29/66545 ,  H01L21/28114 ,  H01L27/0886 ,  H01L29/42376 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7851

Abstract: A semiconductor device includes a gate spacer defining a trench. The trench includes a first part and a second part sequentially positioned on a substrate. An inner surface of the first part has a slope of an acute angle and an inner surface of the second part has a slope of a right angle or obtuse angle with respect to the substrate. A gate electrode fills at least a portion of the trench.

Abstract translation: 半导体器件包括限定沟槽的栅极间隔。 沟槽包括顺序地位于基板上的第一部分和第二部分。 第一部分的内表面具有锐角的斜面，并且第二部分的内表面具有相对于基底的直角或钝角的斜率。 栅电极填充沟槽的至少一部分。