SUBSTRATE INSPECTION APPARATUS AND SUBSTRATE INSPECTION METHOD

    公开(公告)号:US20240175915A1

    公开(公告)日:2024-05-30

    申请号:US18203138

    申请日:2023-05-30

    CPC classification number: G01R31/2853 G01R31/287

    Abstract: In a substrate inspection method, a substrate is provided on a substrate stage, the substrate having internal wires and connection wires, the internal wires respectively provided between stacked insulating layers, the connection wires respectively extending from the internal wires and exposed to an upper surface of the substrate. An electric circuit of the internal wires in the substrate is modeled to generate a circuit model. AC power is applied to the substrate stage to obtain measured capacitance values of the internal wires through currents that are obtained from the connection wires. DC power is applied to the substrate stage to obtain measured resistance values of the internal wires through voltages that are obtained from the connection wires. Impedance values of the internal wires are calculated through the measured capacitance values and the measured resistance values. The impedance values and the circuit model are compared to determine reliability of the substrate.

    METHOD OF INSPECTING SEMICONDUCTOR DEVICE
    3.
    发明公开

    公开(公告)号:US20230266258A1

    公开(公告)日:2023-08-24

    申请号:US18113121

    申请日:2023-02-23

    CPC classification number: G01N23/2251 G01N2223/6116 G01N2223/646

    Abstract: A method of inspecting a semiconductor device includes charging an inspection region of a semiconductor device using a charging electron beam, and scanning the inspection region using a scanning electron beam. The charging of the inspection region includes dividing the inspection region into a charging region and a non-charging region, and charging the charging region using the charging electron beam. The scanning of the inspection region includes irradiating the scanning electron beam to the inspection region, and detecting secondary electrons emitted from the inspection region by the scanning electron beam.

    METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING SEMICONDUCTOR MEASUREMENT SYSTEM
    4.
    发明申请
    METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING SEMICONDUCTOR MEASUREMENT SYSTEM 有权
    使用半导体测量系统制造半导体器件的方法

    公开(公告)号:US20160027707A1

    公开(公告)日:2016-01-28

    申请号:US14794813

    申请日:2015-07-09

    CPC classification number: H01L22/12 H01L21/67173 H01L22/20

    Abstract: A method includes loading a substrate into a sensing chamber; while the substrate is in the sensing chamber, performing a spectral analysis of the substrate; transferring the substrate between the sensing chamber and a processing chamber coupled to the sensing chamber; processing the substrate in the processing chamber to form at least a first layer and/or pattern on the substrate; and based on at least the spectral analysis, determining whether a parameter resulting from the formation of first layer and/or pattern is satisfied.

    Abstract translation: 一种方法包括将衬底加载到感测室中; 同时衬底在感测室中,对衬底进行光谱分析; 在所述感测室和耦合到所述感测室的处理室之间传送所述衬底; 在所述处理室中处理所述衬底以在所述衬底上形成至少第一层和/或图案; 并且至少基于光谱分析,确定是否满足形成第一层和/或图案所引起的参数。

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