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公开(公告)号：US20230170351A1
公开(公告)日：2023-06-01
申请号：US18097664
申请日：2023-01-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seung Hyun Song , Yoon Suk Kim , Kyu Baik Chang , Ui Hui Kwon , Yo Han Kim , Jong Chol Kim , Chang Wook Jeong
IPC: H01L27/088 , H01L29/78 , H01L27/02 , H01L29/06 , H01L27/092
CPC classification number: H01L27/0886 , H01L29/785 , H01L27/0207 , H01L29/0649 , H01L27/0924 , H01L21/823821
Abstract: A semiconductor device includes a fin-type pattern extending in a first direction, a device isolation film surrounding the fin-type pattern, while exposing an upper portion of the fin-type pattern, a gate electrode extending on the device isolation film and the fin-type pattern in a second direction intersecting the first direction, a gate isolation film isolating the gate electrode in the second direction, and including a first material and on the device isolation film, an interlayer insulating film filling a side surface of the fin-type pattern and including a second material different from the first material.
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公开(公告)号：US11507801B2
公开(公告)日：2022-11-22
申请号：US16505155
申请日：2019-07-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： In Huh , Min Chul Park , Tae Ho Lee , Chang Wook Jeong , Chan Young Hwang
Abstract: A method for detecting defects in a semiconductor device includes pre-training a pre-trained convolutional neural network (CNN) model using a sampled clean data set extracted from a first data set; training a normal convolutional neural network model and a label-noise convolutional neural network model using first data of the first data set and the pre-trained convolutional neural network model. The method also includes outputting a first prediction result on whether second data of a second data set is good or bad using the second data and the normal convolutional neural network model; and outputting a second prediction result on whether second data is good or bad using the second data and the label-noise convolutional neural network model. The first prediction result is compared with the second prediction result to perform noise correction when there is a label difference. Third data created as results of the noise correction is added to the sampled clean data set. The normal convolutional neural network model and the label-noise convolutional neural network model are additionally using the sampled clean data set with the third data added.
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公开(公告)号：US20170162568A1
公开(公告)日：2017-06-08
申请号：US15370463
申请日：2016-12-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seung Hyun Song , Yoon Suk Kim , Kyu Baik Chang , Ui Hui Kwon , Yo Han Kim , Jong Chol Kim , Chang Wook Jeong
IPC: H01L27/088 , H01L27/02 , H01L29/06 , H01L29/78
CPC classification number: H01L27/0886 , H01L21/823431 , H01L21/823437 , H01L21/823481 , H01L21/823821 , H01L21/823828 , H01L21/823878 , H01L27/0207 , H01L27/0924 , H01L29/0649 , H01L29/785 , H01L29/7854
Abstract: A semiconductor device includes a fin-type pattern extending in a first direction, a device isolation film surrounding the fin-type pattern, while exposing an upper portion of the fin-type pattern, a gate electrode extending on the device isolation film and the fin-type pattern in a second direction intersecting the first direction, a gate isolation film isolating the gate electrode in the second direction, and including a first material and on the device isolation film, an interlayer insulating film filling a side surface of the fin-type pattern and including a second material different from the first material.
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公开(公告)号：US10950604B2
公开(公告)日：2021-03-16
申请号：US16908829
申请日：2020-06-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seung Hyun Song , Yoon Suk Kim , Kyu Baik Chang , Ui Hui Kwon , Yo Han Kim , Jong Choi Kim , Chang Wook Jeong
IPC: H01L27/088 , H01L29/78 , H01L27/02 , H01L29/06 , H01L27/092 , H01L21/8238 , H01L21/8234
Abstract: A semiconductor device includes a fin-type pattern extending in a first direction, a device isolation film surrounding the fin-type pattern, while exposing an upper portion of the fin-type pattern, a gate electrode extending on the device isolation film and the fin-type pattern in a second direction intersecting the first direction, a gate isolation film isolating the gate electrode in the second direction, and including a first material and on the device isolation film, an interlayer insulating film filling a side surface of the fin-type pattern and including a second material different from the first material.
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公开(公告)号：US11581311B2
公开(公告)日：2023-02-14
申请号：US17161950
申请日：2021-01-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seung Hyun Song , Yoon Suk Kim , Kyu Baik Chang , Ui Hui Kwon , Yo Han Kim , Jong Chol Kim , Chang Wook Jeong
IPC: H01L27/088 , H01L29/78 , H01L27/02 , H01L29/06 , H01L27/092 , H01L21/8238 , H01L21/8234
Abstract: A semiconductor device includes a fin-type pattern extending in a first direction, a device isolation film surrounding the fin-type pattern, while exposing an upper portion of the fin-type pattern, a gate electrode extending on the device isolation film and the fin-type pattern in a second direction intersecting the first direction, a gate isolation film isolating the gate electrode in the second direction, and including a first material and on the device isolation film, an interlayer insulating film filling a side surface of the fin-type pattern and including a second material different from the first material.
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Patent Agency Ranking
公开(公告)号：US20200321334A1
公开(公告)日：2020-10-08
申请号：US16908829
申请日：2020-06-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seung Hyun Song , Yoon Suk Kim , Kyu Baik Chang , Ui Hui Kwon , Yo Han Kim , Jong Chol Kim , Chang Wook Jeong
IPC: H01L27/088 , H01L29/78 , H01L27/02 , H01L29/06 , H01L27/092
Abstract: A semiconductor device includes a fin-type pattern extending in a first direction, a device isolation film surrounding the fin-type pattern, while exposing an upper portion of the fin-type pattern, a gate electrode extending on the device isolation film and the fin-type pattern in a second direction intersecting the first direction, a gate isolation film isolating the gate electrode in the second direction, and including a first material and on the device isolation film, an interlayer insulating film filling a side surface of the fin-type pattern and including a second material different from the first material.
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公开(公告)号：US10714473B2
公开(公告)日：2020-07-14
申请号：US16671478
申请日：2019-11-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seung Hyun Song , Yoon Suk Kim , Kyu Baik Chang , Ui Hui Kwon , Yo Han Kim , Jong Chol Kim , Chang Wook Jeong
IPC: H01L27/088 , H01L29/78 , H01L27/02 , H01L29/06 , H01L27/092 , H01L21/8238 , H01L21/8234
Abstract: A semiconductor device includes a fin-type pattern extending in a first direction, a device isolation film surrounding the fin-type pattern, while exposing an upper portion of the fin-type pattern, a gate electrode extending on the device isolation film and the fin-type pattern in a second direction intersecting the first direction, a gate isolation film isolating the gate electrode in the second direction, and including a first material and on the device isolation film, an interlayer insulating film filling a side surface of the fin-type pattern and including a second material different from the first material.
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公开(公告)号：US20200066720A1
公开(公告)日：2020-02-27
申请号：US16671478
申请日：2019-11-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seung Hyun Song , Yoon Suk Kim , Kyu Baik Chang , Ui Hui Kwon , Yo Han Kim , Jong Chol Kim , Chang Wook Jeong
IPC: H01L27/088 , H01L29/06 , H01L27/02 , H01L29/78 , H01L27/092
Abstract: A semiconductor device includes a fin-type pattern extending in a first direction, a device isolation film surrounding the fin-type pattern, while exposing an upper portion of the fin-type pattern, a gate electrode extending on the device isolation film and the fin-type pattern in a second direction intersecting the first direction, a gate isolation film isolating the gate electrode in the second direction, and including a first material and on the device isolation film, an interlayer insulating film filling a side surface of the fin-type pattern and including a second material different from the first material.
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公开(公告)号：US12229936B2
公开(公告)日：2025-02-18
申请号：US17721616
申请日：2022-04-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ho Joon Lee , Il Kwon Kim , Sang Gul Park , Chang Wook Jeong , Moon Hyun Cha , Sat Byul Kim
Abstract: Some example embodiments relate to a super resolution scanning electron microscope (SEM) image implementing device and/or a method thereof. Provided a super resolution scanning electron microscope (SEM) image implementing device comprising a processor configured to crop a low resolution SEM image to generate a first cropped image and a second cropped image, to upscale the first cropped image and the second cropped image to generate a first upscaled image and a second upscaled image, and to cancel noise from the first upscaled image and the second upscaled image to generate a first noise canceled image and a second noise canceled image.
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公开(公告)号：US20210151433A1
公开(公告)日：2021-05-20
申请号：US17161950
申请日：2021-01-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seung Hyun Song , Yoon Suk Kim , Kyu Baik Chang , Ui Hui Kwon , Yo Han Kim , Jong Chol Kim , Chang Wook Jeong
IPC: H01L27/088 , H01L29/78 , H01L27/02 , H01L29/06 , H01L27/092
Abstract: A semiconductor device includes a fin-type pattern extending in a first direction, a device isolation film surrounding the fin-type pattern, while exposing an upper portion of the fin-type pattern, a gate electrode extending on the device isolation film and the fin-type pattern in a second direction intersecting the first direction, a gate isolation film isolating the gate electrode in the second direction, and including a first material and on the device isolation film, an interlayer insulating film filling a side surface of the fin-type pattern and including a second material different from the first material.
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