公开(公告)号：US10896951B2

公开(公告)日：2021-01-19

申请号：US16545906

申请日：2019-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-bin Song ,  Hei-seung Kim ,  Mirco Cantoro ,  Sang-woo Lee ,  Min-hee Cho ,  Beom-yong Hwang

IPC: H01L29/06 ,  H01L29/786 ,  H01L29/22

Abstract: A semiconductor device includes a channel layer located on a substrate, the channel layer including a conductive oxide, a gate structure located on the channel layer, the gate structure including a gate electrode and gate spacers located on both sidewalls of the gate electrode, and source and drain regions located on both sides of the gate structure in recess regions having a first height from a top surface of the channel layer. The source and drain regions are configured to apply tensile stress to a portion of the channel layer located under the gate structure.

公开(公告)号：US20200150894A1

公开(公告)日：2020-05-14

申请号：US16532575

申请日：2019-08-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： SANG-KIL LEE ,  Chang-kyu Seol ,  Dae-hyun Kim ,  Jin-min Kim ,  Hei-seung Kim ,  Hyun-mog Park ,  Hyun-sik Park ,  Hak-yong Lee

IPC: G06F3/06 ,  G11C11/56 ,  H01L25/18

Abstract: A storage device including: a memory controller configured to output user data received from outside of the storage device in a write operation mode and receive read data in a read operation mode; and a memory device including a memory cell array and a random input and output (I/O) engine, the random I/O engine configured to encode the user data provided from the memory controller using a random I/O code, in the write operation mode, and to generate the read data by decoding internal read data read by a data I/O circuit from the memory cell array using the random I/O code, in the read operation mode.