公开(公告)号：US09983688B2

公开(公告)日：2018-05-29

申请号：US15073793

申请日：2016-03-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： A-Reum Ko ,  Hyun-Chul Kim

IPC: G06F3/02 ,  A45C11/00 ,  H04B1/3888 ,  G06F1/16 ,  H04M1/04

CPC classification number: G06F3/0202 ,  A45C11/00 ,  A45C2011/003 ,  G06F1/16 ,  G06F1/1626 ,  G06F1/1669 ,  G06F3/04886 ,  G06F2200/1633 ,  G06F2203/04803 ,  H04B1/3888 ,  H04M1/04 ,  H04M2250/18

Abstract: A protective cover may include a first cover part configured to be opened to expose a front surface of the electronic device and to be closed to conceal the front surface of the electronic device; a second cover part rotatably coupled to the first cover part and detachably arranged on a rear surface of the electronic device; and an input device detachably provided in the first cover part.

公开(公告)号：US09735824B2

公开(公告)日：2017-08-15

申请号：US14878506

申请日：2015-10-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： A-Reum Ko ,  Hyun-Chul Kim

IPC: H04B1/3877 ,  H04B1/3888 ,  G06F1/16

CPC classification number: H04B1/3877 ,  G06F1/1628 ,  G06F1/1632 ,  H04B1/3888

Abstract: A protection cover is provided, which includes a first cover that is foldable, a first electronic device being attachable to or detachable from the first cover; a second cover that is connected to the first cover so as to be foldable, a second electronic device being attachable to or detachable from the second cover; and a third cover that is connected to the first cover so as to be foldable.

公开(公告)号：US09287159B2

公开(公告)日：2016-03-15

申请号：US14751011

申请日：2015-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Chul Kim ,  Jae-Seok Kim ,  Chan-Hong Park

IPC: H01L29/78 ,  H01L21/762 ,  H01L27/108 ,  H01L29/423 ,  H01L21/285 ,  H01L21/311 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L21/76224 ,  H01L21/28556 ,  H01L21/31111 ,  H01L21/76232 ,  H01L27/10876 ,  H01L27/10891 ,  H01L29/401 ,  H01L29/4236 ,  H01L29/6653 ,  H01L29/66553 ,  H01L29/78

Abstract: A device isolation layer of the memory device includes a first insulation layer in a lower portion of a device isolation trench, a second insulation layer in an upper portion of the device isolation trench and a separation layer between the first insulation layer and the second insulation layer. First and second conductive fillers are in the first and second insulation layers and are separated by the separation layer.

Abstract translation: 存储器件的器件隔离层包括在器件隔离沟槽的下部中的第一绝缘层，器件隔离沟槽的上部中的第二绝缘层和第一绝缘层与第二绝缘层之间的分离层 。 第一和第二导电填料位于第一和第二绝缘层中，并被分离层分离。

公开(公告)号：US09772296B2

公开(公告)日：2017-09-26

申请号：US14460814

申请日：2014-08-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byung-Bok Kang ,  Seok-Min Kang ,  Bon-Ok Koo ,  Kyoung-Hwan Kim ,  Myung-Woo Kim ,  In-Gi Kim ,  Hyun-Chul Kim ,  Sung-Ki Roh ,  Gyung-Jin Min ,  Eun-Seok Lee ,  Jin-Suk Hong

IPC: G01N21/95 ,  G01N21/88

CPC classification number: G01N21/9501 ,  G01N21/8851 ,  G01N2021/8887

Abstract: In a method of inspecting a surface of a substrate, a first surface image of the substrate before loaded into a process chamber may be obtained. The first surface image may be processed to detect a defect on the surface of the substrate. Thus, the surfaces of all of the substrate may be inspected during a process may be performed without transferring the substrates.

公开(公告)号：US09136270B2

公开(公告)日：2015-09-15

申请号：US14027372

申请日：2013-09-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Chul Kim ,  Jae-Seok Kim ,  Chan-Hong Park

IPC: H01L29/78 ,  H01L27/108 ,  H01L29/423 ,  H01L21/762

CPC classification number: H01L21/76224 ,  H01L21/28556 ,  H01L21/31111 ,  H01L21/76232 ,  H01L27/10876 ,  H01L27/10891 ,  H01L29/401 ,  H01L29/4236 ,  H01L29/6653 ,  H01L29/66553 ,  H01L29/78

Abstract: A device isolation layer of the memory device includes a first insulation layer in a lower portion of a device isolation trench, a second insulation layer in an upper portion of the device isolation trench and a separation layer between the first insulation layer and the second insulation layer. First and second conductive fillers are in the first and second insulation layers and are separated by the separation layer.

Abstract translation: 存储器件的器件隔离层包括在器件隔离沟槽的下部中的第一绝缘层，器件隔离沟槽的上部中的第二绝缘层和第一绝缘层与第二绝缘层之间的分离层 。 第一和第二导电填料位于第一和第二绝缘层中，并被分离层分离。