Abstract:
A semiconductor device including a first fin protruding on a substrate and extending in a first direction; a first gate electrode on the first fin, the first gate electrode intersecting the first fin; a first trench formed within the first fin at a side of the first gate electrode; a first epitaxial layer filling a portion of the first trench, wherein a thickness of the first epitaxial layer becomes thinner closer to a sidewall of the first trench; and a second epitaxial layer filling the first trench on the first epitaxial layer, wherein a boron concentration of the second epitaxial layer is greater than a boron concentration of the first epitaxial layer.
Abstract:
An electronic device is provided. The electronic device includes an input interface configured to receive first input information relating to a sharing content operation, a communication interface configured to receive second input information relating to the sharing content operation from at least one external electronic device, a memory configured to store at least one instruction relating to processing of the sharing content, and a processor electronically connected to the input interface, the communication interface, and the memory, where the processor, upon executing the least one instruction, is configured to determine collision occurrence possibility of the first input information and the second input information, and to apply a specified effect corresponding to the collision occurrence possibility.
Abstract:
An electronic device and method are disclosed. The electronic device includes a touchscreen, microphone, speaker, wireless communication circuit, processor and memory. The memory stores instructions executable by the processor to: receive a first user utterance through the microphone, transmit, by the wireless communication circuit, the received first user utterance to an external server through the wireless communication circuit, receive, by the wireless communication circuit, first text data generated by the external server using automatic speech recognition (ASR), when the first text data includes at least one pre-stored word, phrase, and sentence, identifying a plurality of tasks mapped to the at least one pre-stored word, phrase, and sentence, and execute the identified plurality of tasks using at least one of sequential execution or parallel execution.
Abstract:
An electronic apparatus is provided. The electronic apparatus includes a housing including a first plate facing a first direction and a second plate facing a second direction opposite to the first direction, a display exposed through the first plate, a first force sensor disposed inside the housing and disposed under the display, a second force sensor physically spaced apart from the first force sensor and adjacent to the second plate, a processor positioned inside the housing and electrically connected to the display, the first force sensor, and the second force sensor, and a memory electrically connected to the processor and positioned inside the housing.
Abstract:
An electronic device and method are disclosed herein. The electronic device includes a touchscreen, a wireless communication circuit, a microphone, a processor and memory storing instructions implementing the method, including: receiving a first user input including a request to perform a task, transmitting first data associated with the first user input to an external server, receiving a sequence of states executable to perform the task, detecting whether at least one first parameter is omitted from the first user input based on whether execution type information is received with the sequence of states, when the execution type information is received, displaying a graphical user interface (GUI) including at least one input field requesting input of the at least one first parameter, and when the execution type information is not received from the external server, executing a portion of the sequence of states to perform a portion of the task.
Abstract:
A semiconductor device including a first fin protruding on a substrate and extending in a first direction; a first gate electrode on the first fin, the first gate electrode intersecting the first fin; a first trench formed within the first fin at a side of the first gate electrode; a first epitaxial layer filling a portion of the first trench, wherein a thickness of the first epitaxial layer becomes thinner closer to a sidewall of the first trench; and a second epitaxial layer filling the first trench on the first epitaxial layer, wherein a boron concentration of the second epitaxial layer is greater than a boron concentration of the first epitaxial layer.
Abstract:
An electronic device is provided which includes an audio jack that receives an audio plug comprising a plurality of terminals and a plurality of insulating members arranged among the plurality of terminals, the audio plug comprises a plurality of contacts that are capable of contacting the plurality of terminals or the plurality of insulating members, a circuit that is electrically connected with the plurality of contacts and configured to send an audio signal to the audio plug, and a processor configured to control the circuit, wherein at least one of the plurality of contacts is electrically connected with a ground and is configured to contact one of the plurality of insulating members of the audio plug if the audio plug is matched with the audio jack.
Abstract:
Semiconductor devices are provided. The semiconductor devices include active fins including a buffer layer disposed on a substrate and a channel layer disposed on the buffer layer and having a first second lattice constant higher than a lattice constant of the buffer layer, a gate structure covering the channel layer and intersecting the active fins, sidewall spacers disposed on both sidewalls of the gate structure, and capping layers disposed to contact lower surfaces of the sidewall spacers and having a width substantially the same as a width of the lower surfaces of the sidewall spacers.