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    ELECTRONIC DEVICE USING ANTENNA
    1.
    发明申请
    ELECTRONIC DEVICE USING ANTENNA 有权
    使用天线的电子设备

    公开(公告)号：US20160065247A1

    公开(公告)日：2016-03-03

    申请号：US14842480

    申请日：2015-09-01

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Min Ho KIM ,  Sung Min LEE ,  Jong Pil LEE ,  Sung Chul PARK

    IPC: H04B1/00 ,  H04L12/911 ,  H01Q5/30

    CPC classification number: H04B1/0064 ,  H01Q5/30 ,  H04L5/001 ,  H04L47/827

    Abstract: An electronic device is provided, which includes an antenna; and a communication processor configured to transmit and receive a first signal corresponding to a first frequency band through the antenna, and to perform one of transmitting and receiving a second signal corresponding to a second frequency band through the antenna.

    Abstract translation: 提供一种电子设备，其包括天线; 以及通信处理器，被配置为通过天线发送和接收与第一频带相对应的第一信号，并且执行通过天线发送和接收对应于第二频带的第二信号之一。

    NITRIDE SEMICONDUCTOR LIGHT-EMITTTING DEVICE AND PROCESS FOR PRODUCING THE SAME
    3.
    发明申请
    NITRIDE SEMICONDUCTOR LIGHT-EMITTTING DEVICE AND PROCESS FOR PRODUCING THE SAME 审中-公开
    氮化物半导体发光器件及其制造方法

    公开(公告)号：US20140127848A1

    公开(公告)日：2014-05-08

    申请号：US14152980

    申请日：2014-01-10

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Dong Hyun CHO ,  Masayoshi KOIKE ,  Yuji IMAI ,  Min Ho KIM ,  Bang Won OH ,  Hun Joo HAHM

    IPC: H01L33/00

    CPC classification number: H01L33/0075 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647

    Abstract: Provided are a nitride semiconductor light-emitting device comprising a polycrystalline or amorphous substrate made of AlN; a plurality of dielectric patterns formed on the AlN substrate and having a stripe or lattice structure; a lateral epitaxially overgrown-nitride semiconductor layer formed on the AlN substrate having the dielectric patterns by Lateral Epitaxial Overgrowth; a first conductive nitride semiconductor layer formed on the nitride semiconductor layer; an active layer formed on the first conductive nitride semiconductor layer; and a second conductive nitride semiconductor layer formed on the active layer; and a process for producing the same.

    Abstract translation: 提供一种氮化物半导体发光器件，其包括由AlN制成的多晶或非晶衬底; 形成在所述AlN基板上并具有条纹或格子结构的多个电介质图案; 通过横向外延生长形成在具有电介质图案的AlN衬底上的侧向外延氮化半导体层; 形成在所述氮化物半导体层上的第一导电氮化物半导体层; 形成在所述第一导电氮化物半导体层上的有源层; 以及形成在所述有源层上的第二导电氮化物半导体层; 及其制造方法。

    IMAGE DATA PROCESSING DEVICE HAVING IMAGE SENSOR WITH SKEWED PIXEL STRUCTURE
    4.
    发明申请
    IMAGE DATA PROCESSING DEVICE HAVING IMAGE SENSOR WITH SKEWED PIXEL STRUCTURE 审中-公开
    具有镜像像素结构的图像传感器的图像数据处理装置

    公开(公告)号：US20150312492A1

    公开(公告)日：2015-10-29

    申请号：US14612900

    申请日：2015-02-03

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Min Ho KIM

    IPC: H04N5/349 ,  H04N5/374 ,  H04N5/378

    CPC classification number: H04N5/349 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14665 ,  H01L27/307 ,  H04N5/374 ,  H04N5/378 ,  H04N9/045

    Abstract: An image data processing device includes an image sensor which includes a first pixel disposed in a first layer and a second pixel which is disposed in a second layer and is partially overlapped with the first pixel to form an overlapped area, and is configured to output a first signal from the first pixel and a second signal from the second pixel; and an image signal processor configured to output a first data for the overlapped area using a ratio for the overlapped area between the first pixel and the second pixel and the first signal, and output a second data for the overlapped area using the ratio and the second signal.

    Abstract translation: 图像数据处理装置包括图像传感器，其包括设置在第一层中的第一像素和设置在第二层中并与第一像素部分重叠以形成重叠区域的第二像素，并且被配置为输出 来自第一像素的第一信号和来自第二像素的第二信号; 以及图像信号处理器，被配置为使用所述第一像素和所述第二像素之间的重叠区域的比率和所述第一信号来输出所述重叠区域的第一数据，并且使用所述比率输出所述重叠区域的第二数据，并且所述第二数据 信号。

    ELECTRONIC DEVICE FOR INCLUDING SIGNATURE IN ELECTRONIC DOCUMENT AND METHOD OF CONTROLLING THE SAME
    6.
    发明申请
    ELECTRONIC DEVICE FOR INCLUDING SIGNATURE IN ELECTRONIC DOCUMENT AND METHOD OF CONTROLLING THE SAME 审中-公开

    公开(公告)号：US20190058596A1

    公开(公告)日：2019-02-21

    申请号：US16009409

    申请日：2018-06-15

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Moon Soo CHANG ,  Kyu Won KIM ,  Min Ho KIM ,  Jong Hoon PARK ,  In Jun SON ,  Tae In AN ,  So Hyeon JEON ,  In Myung CHOI ,  Ji Yoon PARK ,  Dong Hyun YEOM

    IPC: H04L9/32 ,  H04L9/08

    Abstract: Disclosed is an electronic device. The electronic device comprising: a display including a touch screen; a biometric sensor; a communication circuit; a memory; and at least one processor electrically connected to the display, the biometric sensor, the memory, and the communication circuit, wherein the memory stores a plurality of instructions that, when executed, causes the processor to: receive an electronic document from at least one server using the communication circuit; obtain biometric information associated with a user using the biometric sensor; transmit the biometric information associated with the user to the at least one server through the communication circuit; obtain a signature of the user associated with the electronic document using the display; encrypt the obtained signature with specified data associated with the biometric information; and transmit the encrypted signature and at least one of the electronic document and identification information of the electronic document by using the communication circuit.

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    7.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开

    公开(公告)号：US20180198019A1

    公开(公告)日：2018-07-12

    申请号：US15678462

    申请日：2017-08-16

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jai Won JEAN ,  Min Ho KIM ,  Min Hwan KIM ,  Jang Mi KIM ,  Chul Min KIM ,  Jeong Wook LEE ,  Jae Deok JEONG ,  Yong Seok CHOI

    IPC: H01L33/06 ,  H01L33/32 ,  H01L33/00

    CPC classification number: H01L33/06 ,  H01L33/0025 ,  H01L33/12 ,  H01L33/325

    Abstract: A semiconductor light emitting device including a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, the active layer including at least one quantum well layer and at least one quantum barrier layer that are alternately stacked and form a multiple quantum well structure; at least one border layer in contact with the first conductivity-type semiconductor layer and interposed between the first conductivity-type semiconductor layer and the active layer, the at least one border layer having a band gap energy that decreases in a direction away from the first conductivity-type semiconductor layer; and at least one growth blocking layer interposed between the active layer and the border layer, the at least one growth blocking layer having a band gap energy equal to a band gap energy of the at least one quantum barrier layer.

    IMAGE SENSOR CHIPS
    10.
    发明申请
    IMAGE SENSOR CHIPS 有权
    图像传感器

    公开(公告)号：US20140104473A1

    公开(公告)日：2014-04-17

    申请号：US14051993

    申请日：2013-10-11

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Tae Chan KIM ,  Min Ho KIM ,  Dong Ki MIN ,  Sang Chul SUL ,  Tae Seok OH ,  Kwang Hyun LEE ,  Tae Yon LEE ,  Jung Hoon JUNG ,  Young Gu JIN

    IPC: H04N5/374

    CPC classification number: H04N5/374 ,  H01L27/14627 ,  H01L27/14634

    Abstract: An image sensor chip includes a first wafer and a second wafer. The first wafer includes an image sensor having a plurality of sub-pixels, each of which is configured to detect at least one photon and output a sub-pixel signal according to a result of the detection. The image processor is configured to process sub-pixel signals for each sub-pixel and generate image data. The first wafer and the second wafer are formed in a wafer stack structure.

    Abstract translation: 图像传感器芯片包括第一晶片和第二晶片。 第一晶片包括具有多个子像素的图像传感器，每个子像素被配置为检测至少一个光子并根据检测结果输出子像素信号。 图像处理器被配置为处理每个子像素的子像素信号并生成图像数据。 第一晶片和第二晶片形成为晶片堆叠结构。

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