SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号:US20170069828A1

    公开(公告)日:2017-03-09

    申请号:US15227953

    申请日:2016-08-03

    Abstract: In one embodiment, a semiconductor device comprising, a substrate comprising a wiring layer, a first conductive shielding layer disposed on the substrate and electrically isolated from the wiring layer, the first conductive shielding layer comprising a first bonding surface and a first end surface extending from the first bonding surface, a semiconductor chip disposed on the first conductive shielding layer, a molding member disposed over the first conductive shielding layer to cover the semiconductor chip, a second conductive shielding layer disposed over the first conductive shielding layer and the molding member, the second conductive shielding layer comprising a second bonding surface and a second end surface extending from the second bonding surface, and a bonding portion disposed between the first and second bonding surfaces, the bonding portion comprising a top surface and a bottom surface opposite to the top surface. The bottom surface of the bonding portion contacts the first bonding surface to form a first contact surface. The top surface of the bonding portion contacts the second bonding surface to form a second contact surface. An area of the second contact surface is larger than an area of the second end surface.

    Abstract translation: 在一个实施例中,一种半导体器件,包括:衬底,其包括布线层,设置在衬底上并与布线层电隔离的第一导电屏蔽层,第一导电屏蔽层包括第一接合表面和第一端面, 所述第一接合表面,设置在所述第一导电屏蔽层上的半导体芯片,设置在所述第一导电屏蔽层上以覆盖所述半导体芯片的成型构件,设置在所述第一导电屏蔽层和所述模制构件上方的第二导电屏蔽层, 第二导电屏蔽层,包括从第二接合表面延伸的第二接合表面和第二端表面,以及设置在第一和第二接合表面之间的接合部分,接合部分包括顶表面和与顶表面相对的底表面 。 接合部分的底表面接触第一接合表面以形成第一接触表面。 接合部分的顶表面接触第二接合表面以形成第二接触表面。 第二接触面的面积大于第二端面的面积。

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