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    Plasma processing system
    1.
    发明授权
    Plasma processing system 有权

    公开(公告)号：US12112920B2

    公开(公告)日：2024-10-08

    申请号：US17715453

    申请日：2022-04-07

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jaewon Jeong ,  Daebeom Lee ,  Juho Lee ,  Junghyun Cho

    IPC: H01J37/32 ,  H01L21/3065

    CPC classification number: H01J37/32183 ,  H01J37/32568 ,  H01L21/3065

    Abstract: A plasma processing system includes a radio-frequency (RF) power source unit configured to generate three RF powers; a process chamber to which a process gas supplied and to which the RF powers are applied to generate a plasma; and an impedance matcher between the RF power source unit and the process chamber, the impedance matcher configured to adjust an impedance. The RF power source unit may include a first RF power source connected to a first electrode located in a lower portion of the process chamber to apply a first RF power having a first frequency, a second RF power source connected to the first electrode and to apply a second RF power having a second frequency, and a third RF power source connected to a second electrode located in an upper portion of the process chamber and to apply a third RF power having a third frequency.

    PLASMA GENERATION CIRCUIT AND SUBSTRATE PROCESSING DEVICE INCLUDING THE SAME
    3.
    发明申请
    PLASMA GENERATION CIRCUIT AND SUBSTRATE PROCESSING DEVICE INCLUDING THE SAME 有权

    公开(公告)号：US20250149293A1

    公开(公告)日：2025-05-08

    申请号：US18747933

    申请日：2024-06-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jaewon Jeong ,  Dongchan Jeon ,  Kyungsun Kim ,  Sungyeol Kim ,  Yongwon Cho

    IPC: H01J37/32

    Abstract: A plasma generation circuit includes a high frequency power source configured to generate a first high frequency current; a current divider comprising a first capacitor and a variable capacitor and configured to divide the first high frequency current into a second high frequency current and a third high frequency current; an antenna assembly comprising a center antenna connected to the current divider and through which the second high frequency current is configured to flow, and an edge antenna connected in to the current divider and through which the third high frequency current is configured to flow, the antenna assembly being configured to induce generation of an inductively coupled plasma; a first coil coupled inductor configured to allow the second high frequency current to flow therethrough; and a second coil coupled inductor configured to allow the third high frequency current to flow therethrough and adjacent to the first coil coupled inductor.

    PRESSURE MEASURING APPARATUS
    4.
    发明申请
    PRESSURE MEASURING APPARATUS 审中-公开

    公开(公告)号：US20200370982A1

    公开(公告)日：2020-11-26

    申请号：US16711550

    申请日：2019-12-12

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Inho Won ,  Minseok Moon ,  Byoungkon Park ,  Sangho Lee ,  Jaewon Jeong

    IPC: G01L9/06 ,  G01L19/00 ,  G01B17/04

    Abstract: A pressure measuring apparatus for measuring a jetting pressure of a liquid jetted from a nozzle includes a plate including: a first surface facing the nozzle; and a second surface opposite to the first surface; a pressure sensor configured to detect a discharge position and the discharge pressure at the discharge position of the liquid and generate a signal based on the discharge pressure; and electrical components including a controller configured to receive the signal and collect data regarding the discharge pressure. The pressure sensor is provided on the first surface of the plate and the electrical components are provided on the second surface of the plate.

    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20250169174A1

    公开(公告)日：2025-05-22

    申请号：US18790772

    申请日：2024-07-31

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kyuman Hwang ,  Jinho Bae ,  Jaewon Jeong ,  Sungil Park

    IPC: H01L27/092 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

    Abstract: A semiconductor device includes a lower transistor and an upper transistor located at a higher vertical level than the lower transistor. The lower transistor includes a lower source/drain region, and a lower gate structure and a lower isolation insulating layer that are in contact with a side surface of the lower source/drain region. The upper transistor includes an upper source/drain region, and an upper gate structure and an upper isolation insulating layer that are in contact with a side surface of the upper source/drain region. A bottom surface of the lower isolation insulating layer is located at a same vertical level as a bottom surface of the lower gate structure.

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