公开(公告)号：US12256465B2

公开(公告)日：2025-03-18

申请号：US17841826

申请日：2022-06-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donghyun Cho ,  Hanjae Jeong ,  Hyunchool Chung ,  Seungjoo Na ,  Youcheol Moon ,  Junwoo Park ,  Jisun Lee ,  Sangyoung Ju

IPC: H04W88/02 ,  H04W8/18 ,  H04W8/24 ,  H04W12/06 ,  H04W12/71 ,  H04W12/72

Abstract: An electronic device according to an embodiment of the disclosure may include a communication module, a subscriber identification module, and at least one processor. The at least one processor may identify identification information of the subscriber identification module stored in the subscriber identification module when the subscriber identification module is identified as being first inserted, may configure a network service provider based on the identified identification information, may generate a signature by using lock information of the subscriber identification module, may identify network lock information when the signature is identified as being valid, and may set up a network lock function of the communication module based on the identified network lock information.

公开(公告)号：US20250101145A1

公开(公告)日：2025-03-27

申请号：US18824037

申请日：2024-09-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhyeon An ,  Yeonsik Jung ,  Yemin Park ,  Jeehyun Hong ,  Youngseog Kang ,  Changmin Park ,  Kwangsub Yoon ,  Jisun Lee

IPC: C08F8/32 ,  C08F293/00 ,  H01L21/027 ,  H01L21/308

Abstract: A block copolymer is described, such as one including a first polymer block and a second polymer block that have different structures, wherein the first polymer block includes a first unit derived from an acrylic acid ester, and the second polymer block includes an inorganic material-containing random block, in which a second unit including an inorganic material-containing group and a third unit that is devoid of an inorganic material-containing group are connected to each other to provide a concentration gradient. Also described are methods of manufacturing an integrated circuit device that include forming, on a feature layer, a block copolymer layer including the block copolymer as set forth above; phase-separating the block copolymer layer to form a structure that includes a plurality of first domains that each include the first polymer block, and at least one second domain including the second polymer block; removing the plurality of first domains; and etching the feature layer using the at least one second domain as an etch mask.

公开(公告)号：US20210335601A1

公开(公告)日：2021-10-28

申请号：US17229478

申请日：2021-04-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jisun Lee ,  Seokwoo Jeon ,  Sanghyun Nam

IPC: H01L21/027 ,  H01L21/02 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786 ,  H01L29/66 ,  G03F1/26

Abstract: A method for fabricating a nano-structure includes: providing a phase mask having an uneven lattice structure to contact a photoresist film; exposing the photoresist film to a light through the phase mask such that the light is obliquely incident on a surface of the photoresist film; and developing the photoresist film to form a nano-structure.

公开(公告)号：US11837470B2

公开(公告)日：2023-12-05

申请号：US17229478

申请日：2021-04-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jisun Lee ,  Seokwoo Jeon ,  Sanghyun Nam

IPC: H01L21/027 ,  G03F1/26 ,  G03F7/20 ,  H01L21/02 ,  H01L29/06 ,  H01L29/775 ,  H01L29/786 ,  H01L29/66 ,  H01L29/423

CPC classification number: H01L21/0275 ,  G03F1/26 ,  G03F7/201 ,  H01L21/02603 ,  H01L21/02642 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/775 ,  H01L29/78696

Abstract: A method for fabricating a nano-structure includes: providing a phase mask having an uneven lattice structure to contact a photoresist film; exposing the photoresist film to a light through the phase mask such that the light is obliquely incident on a surface of the photoresist film; and developing the photoresist film to form a nano-structure.