公开(公告)号：US20250040279A1

公开(公告)日：2025-01-30

申请号：US18589834

申请日：2024-02-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minkwan KIM ,  Jongwoo HONG ,  Jonghyun GO ,  Haneul KIM ,  Chang Kyu LEE ,  Keun Yeong CHO ,  Joonhyuk HWANG

IPC: H01L27/146

Abstract: An image sensor includes a pixel array in which pixels having photoelectric conversion elements are arranged in a matrix, color filters corresponding to the pixels and configured to selectively transmit light of at least two different wavelength bands, and microlenses on the color filters. At least some of the microlenses may have different shapes depending on respective wavelength bands that respective corresponding color filters at least partially overlapping with the at least some microlenses are configured to selectively transmit, such that the at least some microlenses are configured to compensate for chromatic aberration between the lights passing through the respective corresponding color filters.

公开(公告)号：US20220199664A1

公开(公告)日：2022-06-23

申请号：US17693760

申请日：2022-03-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghyun GO ,  Jae-Kyu LEE

IPC: H01L27/146

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

公开(公告)号：US20250031476A1

公开(公告)日：2025-01-23

申请号：US18669876

申请日：2024-05-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minho JANG ,  Jonghyun GO ,  Doowon KWON ,  Changkyu LEE ,  Yongkun JO

IPC: H01L27/146 ,  H01L23/00 ,  H01L23/522 ,  H04N25/79

Abstract: An image sensor includes a first semiconductor chip including a first semiconductor substrate including a plurality of pixels and a first wiring structure having a first bonding pad; a second semiconductor chip including a second semiconductor substrate having pixel signal generator circuits, a second wiring structure on the second semiconductor substrate and having an upper bonding pad bonded to the first bonding pad, a back side insulating layer on a lower surface of the second semiconductor substrate and including a shielding metal pattern buried therein, and a conductive through-via penetrating the back side insulating layer and the first semiconductor substrate, and a third semiconductor chip including a bonding layer having a lower bonding pad connected to the conductive through via, a third semiconductor substrate including logic devices, and a third wiring structure having a third bonding pad bonded to the lower bonding pad.

公开(公告)号：US20240186344A1

公开(公告)日：2024-06-06

申请号：US18438908

申请日：2024-02-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghyun GO ,  Jae-Kyu LEE

IPC: H01L27/146

CPC classification number: H01L27/14612 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14683

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

公开(公告)号：US20240321911A1

公开(公告)日：2024-09-26

申请号：US18537644

申请日：2023-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minkwan KIM ,  Joonhyuk HWANG ,  Jonghyun GO ,  Changkyu LEE

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/14621 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14685

Abstract: An image sensor having a structure in which a light-blocking film having an excellent light-blocking effect is provided in a light-blocking region includes a first substrate including a first surface and a second surface, the first surface including a plurality of transistors, and the second surface being opposite to the first surface and configured to receive light, the first substrate comprising a pixel array region and a light-blocking region, an anti-reflection structure on the second surface of the first substrate in the pixel array region and the light-blocking region, and a light-blocking structure on the anti-reflection structure in the light-blocking region, wherein the light-blocking structure comprises a plurality of film that are sequentially stacked, the plurality of film including at least a first conductive film, a first insulating film, and a second conductive film.

公开(公告)号：US20240186345A1

公开(公告)日：2024-06-06

申请号：US18438951

申请日：2024-02-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghyun GO ,  Jae-Kyu LEE

IPC: H01L27/146

CPC classification number: H01L27/14612 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14683

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

公开(公告)号：US20180182794A1

公开(公告)日：2018-06-28

申请号：US15650102

申请日：2017-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghyun GO ,  Jae-Kyu Lee

IPC: H01L27/146

CPC classification number: H01L27/14612 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14683

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

公开(公告)号：US20220238570A1

公开(公告)日：2022-07-28

申请号：US17519750

申请日：2021-11-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jonghyun GO

IPC: H01L27/146 ,  H01L29/423

Abstract: Disclosed are a semiconductor device and an image sensor including the same. The semiconductor device includes a device isolation layer defining an active region on a semiconductor substrate, a gate electrode crossing the active region, a gate insulating pattern between the gate electrode and the semiconductor substrate, a first impurity region provided at a first side of the gate electrode in the active region, and a second impurity region provided at a second side of the gate electrode in the active region, and the gate insulating pattern includes a first edge portion adjacent to a first sidewall of the device isolation layer, a second edge portion adjacent to a second sidewall of the device isolation layer, and a center portion between the first and second edge portions, and the first edge portion has a first thickness, and the second edge portion has a second thickness smaller than the first thickness.

公开(公告)号：US20220190013A1

公开(公告)日：2022-06-16

申请号：US17686680

申请日：2022-03-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghyun GO ,  Jae-Kyu LEE

IPC: H01L27/146

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

公开(公告)号：US20200185438A1

公开(公告)日：2020-06-11

申请号：US16794864

申请日：2020-02-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghyun GO ,  Jae-Kyu Lee

IPC: H01L27/146

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.