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    DEVICE FOR ELECTROSTATIC DISCHARGE PROTECTION USING SILICON-CONTROLLED RECTIFIER
    1.
    发明申请
    DEVICE FOR ELECTROSTATIC DISCHARGE PROTECTION USING SILICON-CONTROLLED RECTIFIER 有权

    公开(公告)号：US20240413631A1

    公开(公告)日：2024-12-12

    申请号：US18733208

    申请日：2024-06-04

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kyoungil DO ,  Chanhee JEON ,  Jooyoung SONG ,  Jinwoo JUNG

    IPC: H02H9/04 ,  H01L27/02 ,  H03K17/60 ,  H03K17/687

    Abstract: A device includes: a first silicon-controlled rectifier comprising a first PNP bipolar junction transistor (BJT) and a first NPN BJT in which bases and collectors are cross-coupled; and a field effect transistor (FET) configured to, based on an electrostatic discharge occurring between an anode of the first silicon-controlled rectifier and a cathode of the first silicon-controlled rectifier, trigger the first silicon-controlled rectifier. An emitter of the first PNP BJT corresponds to a plurality of first p+ regions being spaced apart from each other in a first direction. The FET is connected to the first silicon-controlled rectifier through at least one first n+ region disposed between the plurality of first p+ regions.

    ELECTROSTATIC DISCHARGE PROTECTION DEVICE
    2.
    发明公开
    ELECTROSTATIC DISCHARGE PROTECTION DEVICE 审中-公开

    公开(公告)号：US20240312985A1

    公开(公告)日：2024-09-19

    申请号：US18515524

    申请日：2023-11-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： JONGKYU SONG ,  JIN HEO ,  Minho KIM ,  Jooyoung SONG ,  EUNSUK LEE ,  CHANHEE JEON

    IPC: H01L27/06 ,  H01L27/08

    CPC classification number: H01L27/067 ,  H01L27/0817

    Abstract: Disclosed is an electrostatic discharge protection device which includes a substrate including a first well having a first conductivity type and a second well surrounding the first well, first to fifth diffusion regions formed on the first well, and sixth and seventh diffusion regions formed on the second well. The second diffusion region surrounds the first diffusion region, the fourth diffusion region surrounds the fifth diffusion region, and the fifth diffusion region surrounds the second diffusion region and the fourth diffusion region. The sixth diffusion region surrounds the fifth diffusion region, and the seventh diffusion region surrounds the sixth diffusion region. The sixth and seventh diffusion regions are connected to an anode electrode, and the first to fifth diffusion regions are connected a cathode electrode.

    ELECTRO-STATIC DISCHARGE PROTECTION DEVICE
    3.
    发明公开
    ELECTRO-STATIC DISCHARGE PROTECTION DEVICE 审中-公开

    公开(公告)号：US20240105711A1

    公开(公告)日：2024-03-28

    申请号：US18361892

    申请日：2023-07-30

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： JONGKYU SONG ,  Minho KIM ,  JIN HEO ,  Kyoungil DO ,  Jooyoung SONG ,  CHANHEE JEON

    IPC: H01L27/02 ,  H02H9/04

    CPC classification number: H01L27/0262 ,  H01L27/0255 ,  H01L27/0292 ,  H02H9/046

    Abstract: An electro-static discharge protection device includes a substrate that includes a first well that has a first conductive type and a second well that has a second conductive type, and first to eighth diffusion regions formed on the first well and the second well. At least a portion of the diffusion regions formed in the first well are connected to a first electrode, and at least a portion of diffusion regions formed in a second well are connected to a second electrode. The contact between one of diffusion regions formed in the first well and an N well forms a trigger diode. A junction between one of diffusion regions formed in a second well and a P well forms a trigger diode. The trigger diodes are electrically connected to each other.

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