公开(公告)号：US10557198B2

公开(公告)日：2020-02-11

申请号：US16190558

申请日：2018-11-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heon Bok Lee ,  Dae Yong Kim ,  Dong Woo Kim ,  Jun Ki Park ,  Sang Yub Ie ,  Sang Jin Hyun

IPC: H01L21/285 ,  C23C16/455

Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a substrate chuck, a shower head structure over the substrate chuck, and a gas distribution apparatus connected to the shower head structure. The gas distribution apparatus includes a dispersion container including a first dispersion space and a gas inlet section on the dispersion container. The gas inlet section includes a first inlet pipe including a first inlet path fluidly connected to the first dispersion space and a second inlet pipe including a second inlet path fluidly connected to the first dispersion space. The second inlet pipe surrounds at least a portion of a sidewall of the first inlet pipe.

公开(公告)号：US20240234525A9

公开(公告)日：2024-07-11

申请号：US18234596

申请日：2023-08-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun Ki Park ,  Sung Hwan Kim ,  Wan Don Kim ,  Heung Seok Ryu

IPC: H01L29/417 ,  H01L21/285 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/45 ,  H01L29/66 ,  H01L29/775

CPC classification number: H01L29/41733 ,  H01L21/28518 ,  H01L29/0673 ,  H01L29/401 ,  H01L29/42392 ,  H01L29/45 ,  H01L29/66439 ,  H01L29/775

Abstract: A semiconductor device includes an active pattern extending in a first direction, a plurality of gate structures on the active pattern spaced in the first direction, and including a gate electrode extending in a second direction, a source/drain pattern between adjacent gate structures, a silicide mask pattern on the source/drain pattern, an upper surface of the silicide mask pattern being lower than an upper surface of the gate electrode, a source/drain contact on the source/drain pattern connected to the source/drain pattern, and a contact silicide film between the source/drain contact and the source/drain pattern in contact with a bottom surface of the silicide mask pattern, wherein a height from a lowermost part of the source/drain pattern to a lowermost part of the source/drain contact is smaller than a height from the lowermost part of the source/drain pattern to the bottom surface of the silicide mask pattern.

公开(公告)号：US20240136416A1

公开(公告)日：2024-04-25

申请号：US18234596

申请日：2023-08-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun Ki Park ,  Sung Hwan Kim ,  Wan Don Kim ,  Heung Seok Ryu

IPC: H01L29/417 ,  H01L21/285 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/45 ,  H01L29/66 ,  H01L29/775

CPC classification number: H01L29/41733 ,  H01L21/28518 ,  H01L29/0673 ,  H01L29/401 ,  H01L29/42392 ,  H01L29/45 ,  H01L29/66439 ,  H01L29/775

Abstract: A semiconductor device includes an active pattern extending in a first direction, a plurality of gate structures on the active pattern spaced in the first direction, and including a gate electrode extending in a second direction, a source/drain pattern between adjacent gate structures, a silicide mask pattern on the source/drain pattern, an upper surface of the silicide mask pattern being lower than an upper surface of the gate electrode, a source/drain contact on the source/drain pattern connected to the source/drain pattern, and a contact silicide film between the source/drain contact and the source/drain pattern in contact with a bottom surface of the silicide mask pattern, wherein a height from a lowermost part of the source/drain pattern to a lowermost part of the source/drain contact is smaller than a height from the lowermost part of the source/drain pattern to the bottom surface of the silicide mask pattern.

公开(公告)号：US20190292664A1

公开(公告)日：2019-09-26

申请号：US16190558

申请日：2018-11-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heon Bok Lee ,  Dae Yong Kim ,  Dong Woo Kim ,  Jun Ki Park ,  Sang Yub Ie ,  Sang Jin Hyun

IPC: C23C16/455 ,  H01L21/285

Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a substrate chuck, a shower head structure over the substrate chuck, and a gas distribution apparatus connected to the shower head structure. The gas distribution apparatus includes a dispersion container including a first dispersion space and a gas inlet section on the dispersion container. The gas inlet section includes a first inlet pipe including a first inlet path fluidly connected to the first dispersion space and a second inlet pipe including a second inlet path fluidly connected to the first dispersion space. The second inlet pipe surrounds at least a portion of a sidewall of the first inlet pipe.

公开(公告)号：US11923426B2

公开(公告)日：2024-03-05

申请号：US17367988

申请日：2021-07-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Won Kang ,  Tae-Yeol Kim ,  Jeong Ik Kim ,  Rak Hwan Kim ,  Jun Ki Park ,  Chung Hwan Shin

IPC: H01L29/417 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L29/06 ,  H01L29/423 ,  H01L29/78

CPC classification number: H01L29/41775 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53266 ,  H01L29/0665 ,  H01L29/41733 ,  H01L29/41791 ,  H01L29/42392 ,  H01L29/7851

Abstract: A semiconductor device capable of improving a device performance and a reliability is provided. The semiconductor device comprising a gate structure including a gate electrode on a substrate, a source/drain pattern on a side face of the gate electrode, on the substrate and, a source/drain contact connected to the source/drain pattern, on the source/drain pattern, a gate contact connected to the gate electrode, on the gate electrode, and a wiring structure connected to the source/drain contact and the gate contact, on the source/drain contact and the gate contact, wherein the wiring structure includes a first via plug, a second via plug, and a wiring line connected to the first via plug and the second via plug, the first via plug has a single conductive film structure, and the second via plug includes a lower via filling film, and an upper via filling film on the lower via filling film.