公开(公告)号：US20160049429A1

公开(公告)日：2016-02-18

申请号：US14819715

申请日：2015-08-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun Suk LEE ,  Young Chan KIM ,  Jung Chak AHN ,  Young Woo JUNG

IPC: H01L27/146

CPC classification number: H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14638 ,  H01L27/14643 ,  H01L27/14656 ,  H04N5/37452

Abstract: A global shutter image sensor according to an exemplary embodiment of the present inventive concepts includes a semiconductor substrate including a first surface and a second surface, a photo-electric conversion region formed in the semiconductor substrate, a storage diode formed in a vicinity of the photo-electric conversion region in the semiconductor substrate, a drain region formed above the photo-electric conversion region in the semiconductor substrate, a floating diffusion region formed above the storage diode in the semiconductor substrate, an overflow gate transferring first charges from the photo-electric conversion region to the drain region, a storage gate transferring second charges from the photo-electric conversion region to the storage diode, and a transfer gate transferring the second charges from the storage diode to the floating diffusion region. The overflow gate, the photo-electric conversion region, the storage gate, the storage diode, the transfer gate, and the floating diffusion region are formed in a row.

Abstract translation: 根据本发明构思的示例性实施例的全局快门图像传感器包括：半导体衬底，包括第一表面和第二表面;形成在半导体衬底中的光电转换区域;形成在照片附近的存储二极管 半导体衬底中的光电转换区域上形成的漏极区域，形成在半导体衬底中的存储二极管上方的浮动扩散区域;溢流栅极，从光电转换区域 转换区域到漏极区域，存储栅极将第二电荷从光电转换区域转移到存储二极管;以及传输栅极，将第二电荷从存储二极管转移到浮动扩散区域。 溢流栅，光电转换区，存储栅极，存储二极管，传输栅极和浮置扩散区域形成一行。

公开(公告)号：US20170229500A1

公开(公告)日：2017-08-10

申请号：US15581198

申请日：2017-04-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun Suk LEE ,  Jung Chak AHN ,  Hee Geun JEONG ,  Kyung Ho LEE

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/374

CPC classification number: H01L27/14605 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H04N5/3575 ,  H04N5/361 ,  H04N5/374 ,  H04N5/378

Abstract: An image sensor includes a first pixel that is in an active pixel region, a second pixel that is in a dummy region adjacent the active pixel region, and a first deep trench isolation (DTI) formed between the first pixel and the second pixel.