公开(公告)号：US20140374868A1

公开(公告)日：2014-12-25

申请号：US14307620

申请日：2014-06-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae Hun LEE ,  Hee Geun JEONG ,  Byung Jun PARK ,  Eun Kyung PARK ,  Jung Chak AHN ,  Duck Hyung LEE ,  Gye Hun CHOI

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14687

Abstract: An image sensor includes a plurality of photo detectors and a plurality of trench isolations configured to isolate the photo detectors from each other. Each of the trench isolations includes a plurality of films in a multi-layer structure. A method of manufacturing an image sensor includes forming a plurality of trench isolations to isolate a plurality of photo detectors from each other, forming a first film in each of the trench isolations, and forming a second film that constructs a multi-layer structure together with the first film.

Abstract translation: 图像传感器包括多个光电检测器和多个沟槽隔离件，其被配置为将光电检测器彼此隔离。 每个沟槽隔离件包括多层结构的膜。 制造图像传感器的方法包括形成多个沟槽隔离以将多个光电检测器彼此隔离，在每个沟槽隔离中形成第一膜，并形成构造多层结构的第二膜以及 第一部电影

公开(公告)号：US20170229500A1

公开(公告)日：2017-08-10

申请号：US15581198

申请日：2017-04-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun Suk LEE ,  Jung Chak AHN ,  Hee Geun JEONG ,  Kyung Ho LEE

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/374

CPC classification number: H01L27/14605 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H04N5/3575 ,  H04N5/361 ,  H04N5/374 ,  H04N5/378

Abstract: An image sensor includes a first pixel that is in an active pixel region, a second pixel that is in a dummy region adjacent the active pixel region, and a first deep trench isolation (DTI) formed between the first pixel and the second pixel.

公开(公告)号：US20160099267A1

公开(公告)日：2016-04-07

申请号：US14872691

申请日：2015-10-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Wook LEE ,  Yi Tae KIM ,  Jong Eun PARK ,  Jung Chak AHN ,  Kyung Ho LEE ,  Tae Hun LEE ,  Hee Geun JEONG

IPC: H01L27/146 ,  H04N9/04 ,  H04N5/374

CPC classification number: H01L27/1463 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14689 ,  H04N5/374 ,  H04N9/045

Abstract: An image sensor such as a complementary metal-oxide-semiconductor (CMOS) image sensor and a method of manufacturing the same are provided. The CMOS image sensor includes: a semiconductor substrate including a first surface and a third surface formed by removing a part of the semiconductor substrate from a second surface opposite to the first surface; a plurality of active regions which are formed between the first surface and the third surface and each of which includes a photoelectric conversion element generating charges in response to light input through the third surface; and an isolation region vertically formed from either of the first and third surfaces to isolate the active regions from one another. When the CMOS image sensor is viewed from the above of the third surface, each of the active regions may have round corners and concave sides.

Abstract translation: 提供了诸如互补金属氧化物半导体（CMOS）图像传感器的图像传感器及其制造方法。 CMOS图像传感器包括：半导体衬底，其包括通过从与第一表面相对的第二表面去除半导体衬底的一部分而形成的第一表面和第三表面; 多个有源区，形成在第一表面和第三表面之间，每个有源区包括响应于通过第三表面输入的光而产生电荷的光电转换元件; 以及从所述第一表面和所述第三表面中的任一个垂直地形成的隔离区域，以将所述活性区域彼此隔离。 当从第三表面的上方观察CMOS图像传感器时，每个有源区域可以具有圆角和凹面。

公开(公告)号：US20230275041A1

公开(公告)日：2023-08-31

申请号：US17973702

申请日：2022-10-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Gu JIN ,  Jung Chak AHN ,  Young Sun OH

IPC: H01L23/60 ,  H01L27/146

CPC classification number: H01L23/60 ,  H01L27/14645 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683

Abstract: An image sensor includes a substrate having a first surface and a second surface opposing to the first surface, first pixel separation patterns defining a plurality of unit pixels, which include photoelectric conversion regions in the substrate, each of the first pixel separation patterns including a first conductive film and a second conductive film on the first conductive film, and microlenses on the second surface of the substrate, wherein the first conductive film extends along sidewalls of the second conductive film to separate the second conductive film from the substrate, the first conductive film has a greater reflectance than the second conductive film for a predetermined wavelength range, and the second conductive film has a greater step coverage than the first conductive film.

公开(公告)号：US20130077090A1

公开(公告)日：2013-03-28

申请号：US13628586

申请日：2012-09-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Chak AHN

IPC: G01J1/00

CPC classification number: G01J1/0488 ,  H01L27/14621

Abstract: An image sensor may include a plurality of filters; and an air gap region positioned between the plurality of filters, an index of refraction of each of the filters is greater than an index of refraction of the air gap region.

Abstract translation: 图像传感器可以包括多个滤光器; 以及位于多个滤光片之间的气隙区域，每个滤光器的折射率大于气隙区域的折射率。

公开(公告)号：US20230143634A1

公开(公告)日：2023-05-11

申请号：US17857082

申请日：2022-07-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Gu JIN ,  Jung Chak AHN ,  Won Seok LEE

IPC: H01L27/146

CPC classification number: H01L27/14612

Abstract: Disclosed is a semiconductor device including a substrate, a gate structure on the substrate, and including first and second sides extended in parallel with a first direction and spaced apart from each other in a second direction, and a third side extended in parallel with the second direction, and a plurality of source/drain areas including first and second source/drain areas spaced apart from each other in the second direction and a third source/drain area spaced apart from at least one of the first or second source/drain area in the first direction, the first and second source/drain areas overlap the first and second sides, respectively, the third source/drain area overlaps one of the first side or the third side, and a voltage applied to the first and second source/drain areas and a voltage applied to the third source/drain area operate based on their respective values different from each other.

公开(公告)号：US20160049429A1

公开(公告)日：2016-02-18

申请号：US14819715

申请日：2015-08-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun Suk LEE ,  Young Chan KIM ,  Jung Chak AHN ,  Young Woo JUNG

IPC: H01L27/146

CPC classification number: H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14638 ,  H01L27/14643 ,  H01L27/14656 ,  H04N5/37452

Abstract: A global shutter image sensor according to an exemplary embodiment of the present inventive concepts includes a semiconductor substrate including a first surface and a second surface, a photo-electric conversion region formed in the semiconductor substrate, a storage diode formed in a vicinity of the photo-electric conversion region in the semiconductor substrate, a drain region formed above the photo-electric conversion region in the semiconductor substrate, a floating diffusion region formed above the storage diode in the semiconductor substrate, an overflow gate transferring first charges from the photo-electric conversion region to the drain region, a storage gate transferring second charges from the photo-electric conversion region to the storage diode, and a transfer gate transferring the second charges from the storage diode to the floating diffusion region. The overflow gate, the photo-electric conversion region, the storage gate, the storage diode, the transfer gate, and the floating diffusion region are formed in a row.

Abstract translation: 根据本发明构思的示例性实施例的全局快门图像传感器包括：半导体衬底，包括第一表面和第二表面;形成在半导体衬底中的光电转换区域;形成在照片附近的存储二极管 半导体衬底中的光电转换区域上形成的漏极区域，形成在半导体衬底中的存储二极管上方的浮动扩散区域;溢流栅极，从光电转换区域 转换区域到漏极区域，存储栅极将第二电荷从光电转换区域转移到存储二极管;以及传输栅极，将第二电荷从存储二极管转移到浮动扩散区域。 溢流栅，光电转换区，存储栅极，存储二极管，传输栅极和浮置扩散区域形成一行。

公开(公告)号：US20140362272A1

公开(公告)日：2014-12-11

申请号：US14286040

申请日：2014-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Chak AHN ,  Hee Geun JEONG

IPC: H04N5/374

CPC classification number: H04N5/3745 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14614 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/1464

Abstract: A method of generating a pixel array layout for an image sensor (wherein the image sensor includes a plurality of unit pixels, and each of the plurality of unit pixels includes a plurality of transistors) includes forming each unit pixel to include a shallow trench isolation (STI). The STI is between a deep trench isolation (DTI) area and one of a p-well region and source and drain regions of each transistor. The p-well region is below a gate of each of the transistors, and the DTI area is filled with at least two materials.

Abstract translation: 一种生成图像传感器的像素阵列布局的方法（其中图像传感器包括多个单位像素，并且多个单位像素中的每一个包括多个晶体管）包括形成每个单位像素以包括浅沟槽隔离（ STI）。 STI位于深沟槽隔离（DTI）区域和p阱区域之一以及每个晶体管的源极和漏极区域之间。 p阱区域在每个晶体管的栅极之下，并且DTI区域填充有至少两种材料。

公开(公告)号：US20170040364A1

公开(公告)日：2017-02-09

申请号：US15229549

申请日：2016-08-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Sun OH ,  Jung Chak AHN ,  Young Woo JUNG

IPC: H01L27/146 ,  H04N5/374

CPC classification number: H01L27/14614 ,  H01L27/14605 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

Abstract: Image sensors and image processing devices including the image sensors are provided. The image sensors may include a semiconductor substrate including a plurality of pixel areas, a photodiode provided in the semiconductor substrate in one of the plurality of pixel areas and a transfer transistor having a transfer gate electrode. A portion of the transfer gate electrode may be in the semiconductor substrate and may extend toward the photodiode. The image sensors may also include a floating diffusion configured to accumulate charges transferred from the photodiode by the transfer transistor, and the floating diffusion may include a first area and a second area disposed on different sides of the transfer gate electrode.

Abstract translation: 提供了包括图像传感器的图像传感器和图像处理装置。 图像传感器可以包括包括多个像素区域的半导体衬底，设置在多个像素区域中的一个像素区域中的半导体衬底中的光电二极管和具有传输栅电极的传输晶体管。 传输栅电极的一部分可以在半导体衬底中并且可以朝着光电二极管延伸。 图像传感器还可以包括浮置扩散，其被配置为累积由传输晶体管从光电二极管传送的电荷，并且浮动扩散可以包括设置在传输栅电极的不同侧上的第​​一区域和第二区域。

公开(公告)号：US20130320479A1

公开(公告)日：2013-12-05

申请号：US13836226

申请日：2013-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Chak AHN ,  Kyung Ho LEE ,  Sang Jun CHOI

IPC: H01L31/02 ,  H01L31/18

CPC classification number: H01L31/02 ,  H01L27/14609 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14645 ,  H01L31/18

Abstract: An image sensor includes a photodetector formed in an epitaxial layer, and trench isolations each formed in a direction from a back side of the epitaxial layer to a front side of the epitaxial layer. Each of the trench isolations is filled with at least one insulator, and the insulator is a negative charge material.

Abstract translation: 图像传感器包括形成在外延层中的光电检测器和沟槽隔离，每个沟槽隔离件沿从外延层的背面到外延层的前侧的方向形成。 每个沟槽隔离物填充有至少一个绝缘体，绝缘体是负电荷材料。