公开(公告)号：US20210335877A1

公开(公告)日：2021-10-28

申请号：US17138112

申请日：2020-12-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Han Seok KIM ,  Byung Jun PARK ,  Jin Ju JEON ,  Hee Geun JEONG

IPC: H01L27/146

Abstract: An image sensor including: a substrate which includes a first surface and a second surface opposite each other; a plurality of pixels, each pixel including a photoelectric conversion layer in the substrate; a pixel separation pattern disposed in the substrate and separating the pixels; a surface insulating layer disposed on the first surface of the substrate; conductor contacts disposed in the surface insulating layer; and a grid pattern disposed on the surface insulating layer, wherein the pixel separation pattern includes a first portion and a second portion arranged in a direction parallel to the first surface of the substrate, and the conductor contacts are interposed between the first portion of the pixel separation pattern and the grid pattern and are not interposed between the second portion of the pixel separation pattern and the grid pattern.

公开(公告)号：US20230378206A1

公开(公告)日：2023-11-23

申请号：US18124973

申请日：2023-03-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Su PARK ,  Seung Joo NAH ,  Hoe Min JEONG ,  Hee Geun JEONG

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/1462 ,  H01L27/14645

Abstract: Disclosed is an image sensor including a substrate having a photoelectric conversion element disposed therein a passivation layer disposed on the substrate and extending in a first direction, a conductive pattern disposed on the passivation layer, and an adhesive layer deposited on the passivation layer and the conductive pattern, wherein the conductive pattern includes a first flat area disposed on the passivation layer and extending in the first direction, and an inclined area connected to the first flat area, wherein a first top face of the inclined area is bent from a second top face of the first flat area, wherein the first top face has a constant slope with respect to the second top face.

公开(公告)号：US20140362272A1

公开(公告)日：2014-12-11

申请号：US14286040

申请日：2014-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Chak AHN ,  Hee Geun JEONG

IPC: H04N5/374

CPC classification number: H04N5/3745 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14614 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/1464

Abstract: A method of generating a pixel array layout for an image sensor (wherein the image sensor includes a plurality of unit pixels, and each of the plurality of unit pixels includes a plurality of transistors) includes forming each unit pixel to include a shallow trench isolation (STI). The STI is between a deep trench isolation (DTI) area and one of a p-well region and source and drain regions of each transistor. The p-well region is below a gate of each of the transistors, and the DTI area is filled with at least two materials.

Abstract translation: 一种生成图像传感器的像素阵列布局的方法（其中图像传感器包括多个单位像素，并且多个单位像素中的每一个包括多个晶体管）包括形成每个单位像素以包括浅沟槽隔离（ STI）。 STI位于深沟槽隔离（DTI）区域和p阱区域之一以及每个晶体管的源极和漏极区域之间。 p阱区域在每个晶体管的栅极之下，并且DTI区域填充有至少两种材料。

公开(公告)号：US20240234472A1

公开(公告)日：2024-07-11

申请号：US18582945

申请日：2024-02-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Han Seok KIM ,  Byung Jun PARK ,  Jin Ju JEON ,  Hee Geun JEONG

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689

Abstract: An image sensor including: a substrate which includes a first surface and a second surface opposite each other; a plurality of pixels, each pixel including a photoelectric conversion layer in the substrate; a pixel separation pattern disposed in the substrate and separating the pixels; a surface insulating layer disposed on the first surface of the substrate; conductor contacts disposed in the surface insulating layer; and a grid pattern disposed on the surface insulating layer, wherein the pixel separation pattern includes a first portion and a second portion arranged in a direction parallel to the first surface of the substrate, and the conductor contacts are interposed between the first portion of the pixel separation pattern and the grid pattern and are not interposed between the second portion of the pixel separation pattern and the grid pattern.

公开(公告)号：US20140374868A1

公开(公告)日：2014-12-25

申请号：US14307620

申请日：2014-06-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae Hun LEE ,  Hee Geun JEONG ,  Byung Jun PARK ,  Eun Kyung PARK ,  Jung Chak AHN ,  Duck Hyung LEE ,  Gye Hun CHOI

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14687

Abstract: An image sensor includes a plurality of photo detectors and a plurality of trench isolations configured to isolate the photo detectors from each other. Each of the trench isolations includes a plurality of films in a multi-layer structure. A method of manufacturing an image sensor includes forming a plurality of trench isolations to isolate a plurality of photo detectors from each other, forming a first film in each of the trench isolations, and forming a second film that constructs a multi-layer structure together with the first film.

Abstract translation: 图像传感器包括多个光电检测器和多个沟槽隔离件，其被配置为将光电检测器彼此隔离。 每个沟槽隔离件包括多层结构的膜。 制造图像传感器的方法包括形成多个沟槽隔离以将多个光电检测器彼此隔离，在每个沟槽隔离中形成第一膜，并形成构造多层结构的第二膜以及 第一部电影

公开(公告)号：US20220020803A1

公开(公告)日：2022-01-20

申请号：US17190796

申请日：2021-03-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Han Seok KIM ,  Byung Jun PARK ,  Byoung Ho KIM ,  Hee Geun JEONG

IPC: H01L27/146

Abstract: A semiconductor device including: a first substrate including a first surface and a second surface; a first inter-wiring insulating film on the first substrate; a first wiring in the first inter-wiring insulating film; a landing via in the first inter-wiring insulating film, and spaced apart from the first wiring; a second substrate including a third surface and a fourth surface; a second inter-wiring insulating film on the second substrate; a second wiring in the second inter-wiring insulating film; and a through via structure penetrating the second substrate and the second inter-wiring insulating film, and electrically connecting the second wiring to the landing via, wherein with respect to the second surface of the first substrate, a top surface of the landing via is higher than a bottom surface of the first wiring, and a bottom surface of the landing via is lower than the bottom surface of the first wiring.

公开(公告)号：US20170229500A1

公开(公告)日：2017-08-10

申请号：US15581198

申请日：2017-04-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun Suk LEE ,  Jung Chak AHN ,  Hee Geun JEONG ,  Kyung Ho LEE

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/374

CPC classification number: H01L27/14605 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H04N5/3575 ,  H04N5/361 ,  H04N5/374 ,  H04N5/378

Abstract: An image sensor includes a first pixel that is in an active pixel region, a second pixel that is in a dummy region adjacent the active pixel region, and a first deep trench isolation (DTI) formed between the first pixel and the second pixel.

公开(公告)号：US20160099267A1

公开(公告)日：2016-04-07

申请号：US14872691

申请日：2015-10-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Wook LEE ,  Yi Tae KIM ,  Jong Eun PARK ,  Jung Chak AHN ,  Kyung Ho LEE ,  Tae Hun LEE ,  Hee Geun JEONG

IPC: H01L27/146 ,  H04N9/04 ,  H04N5/374

CPC classification number: H01L27/1463 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14689 ,  H04N5/374 ,  H04N9/045

Abstract: An image sensor such as a complementary metal-oxide-semiconductor (CMOS) image sensor and a method of manufacturing the same are provided. The CMOS image sensor includes: a semiconductor substrate including a first surface and a third surface formed by removing a part of the semiconductor substrate from a second surface opposite to the first surface; a plurality of active regions which are formed between the first surface and the third surface and each of which includes a photoelectric conversion element generating charges in response to light input through the third surface; and an isolation region vertically formed from either of the first and third surfaces to isolate the active regions from one another. When the CMOS image sensor is viewed from the above of the third surface, each of the active regions may have round corners and concave sides.

Abstract translation: 提供了诸如互补金属氧化物半导体（CMOS）图像传感器的图像传感器及其制造方法。 CMOS图像传感器包括：半导体衬底，其包括通过从与第一表面相对的第二表面去除半导体衬底的一部分而形成的第一表面和第三表面; 多个有源区，形成在第一表面和第三表面之间，每个有源区包括响应于通过第三表面输入的光而产生电荷的光电转换元件; 以及从所述第一表面和所述第三表面中的任一个垂直地形成的隔离区域，以将所述活性区域彼此隔离。 当从第三表面的上方观察CMOS图像传感器时，每个有源区域可以具有圆角和凹面。