公开(公告)号：US20190079816A1

公开(公告)日：2019-03-14

申请号：US15961918

申请日：2018-04-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KWANGKYU BANG ,  YOUNG-SEOP SHIM ,  HEEYOUB KANG ,  KYUNGDUK LEE

IPC: G06F11/00 ,  G06F3/06 ,  G06F11/07

CPC classification number: G06F11/006 ,  G06F3/0653 ,  G06F11/073 ,  G06F11/0772 ,  G06F11/0787

Abstract: An operating method of a memory controller to control a nonvolatile memory device includes receiving information about operation failure from the nonvolatile memory device, receiving lock-out status information from the nonvolatile memory device, determining whether a lock-out signal is output based on the lock-out status information, and determining a failure block corresponding to the information about the operation failure as a normal block or a bad block depending on the determination result.

公开(公告)号：US20230402120A1

公开(公告)日：2023-12-14

申请号：US18132472

申请日：2023-04-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KYUNGDUK LEE ,  Ho-Sung Ahn ,  Youn-Soo Cheon

IPC: G11C29/02 ,  G11C29/52

CPC classification number: G11C29/022 ,  G11C29/52

Abstract: A data storage device including: a memory device including a plurality of memory blocks; and a memory controller configured to control the memory device, wherein the plurality of memory blocks are connected with row lines, wherein the row lines include word lines, wherein the memory controller is further configured to: check whether a resistive defect occurs at the row lines except for the word lines; and set a program operation time of a memory block corresponding to a row line, at which the resistive defect occurs, to be longer than a program operation time of the other memory blocks.

公开(公告)号：US20180286492A1

公开(公告)日：2018-10-04

申请号：US15837841

申请日：2017-12-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KYUNGDUK LEE ,  YOUNG-SEOP SHIM

IPC: G11C29/38 ,  G11C29/44

CPC classification number: G11C29/44 ,  G11C29/38 ,  G11C29/789

Abstract: A storage device includes a nonvolatile memory device that detects loop counts of state pass loops of at least one target state of a plurality of target states, and generates state loop count information (SLCI) indicative of whether a program operation is successful based on the detected loop count of the state pass loops, during a program operation of selected memory cells; and a storage controller that makes a request to the nonvolatile memory device for the state loop count information in response to detection of an operation condition or an external command, and assigns a memory block in which the selected memory cells are included as a bad block based on the state loop count information from the nonvolatile memory device.

公开(公告)号：US20230176788A1

公开(公告)日：2023-06-08

申请号：US17932073

申请日：2022-09-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KYUNGDUK LEE ,  Younsoo CHEON

IPC: G06F3/06

CPC classification number: G06F3/0659 ,  G06F3/0658 ,  G06F3/0679 ,  G06F3/0607

Abstract: A storage device includes nonvolatile memories each including an internal temperature sensor; a memory controller configured having a plurality of operation commands defined for different temperature and an external temperature sensor. The memory controller obtains an external temperature value from the external temperature sensor in a first cycle, obtains an internal temperature value of the internal temperature sensor in a second cycle different from the first cycle, determines a temperature range of a target nonvolatile memory based on the external temperature value when a difference between the external temperature value and the internal temperature value is equal to or less than a first threshold value, to determine the temperature range based on the internal temperature value when the difference exceeds the first threshold, and to provide an operation command corresponding to the temperature range to the target nonvolatile memory.

公开(公告)号：US20220199162A1

公开(公告)日：2022-06-23

申请号：US17378202

申请日：2021-07-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： YOUHWAN KIM ,  KYUNGDUK LEE

IPC: G11C16/08 ,  G11C16/04 ,  G11C16/32 ,  G11C16/26 ,  G06F12/02

Abstract: An operating method of a storage device includes monitoring a temperature of a nonvolatile memory device including a plurality of memory blocks, receiving a first request from a host, in response to the first request, transmitting a first command to the nonvolatile memory device when a first memory block corresponding to the first request is exposed at a temperature of a threshold temperature or higher for a first time period that is equal to or greater than a threshold time period and a second command to the nonvolatile memory device when the first memory block is exposed at a temperature lower than the threshold temperature for the threshold time period, charging word lines of the first memory block with a driving voltage in response to the first command, and performing a first operation corresponding to the first request in response to the first command or the second command.

公开(公告)号：US20210109856A1

公开(公告)日：2021-04-15

申请号：US16930429

申请日：2020-07-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KYUNGDUK LEE ,  YOUNG-SEOP SHIM

IPC: G06F12/02 ,  G06F12/0882 ,  G06F12/0873 ,  G06F11/30

Abstract: A memory management method of a storage device including: programming write-requested data in a memory block; counting an elapse time from a time when a last page of the memory block was programmed with the write-requested data; triggering a garbage collection of the storage device when the elapse time exceeds a threshold value; and programming valid data collected by the garbage collection at a first clean page of the memory block.