公开(公告)号：US10651236B2

公开(公告)日：2020-05-12

申请号：US16392969

申请日：2019-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kil-ho Lee ,  Yoon-jong Song ,  Gwan-hyeob Koh

IPC: H01L27/22 ,  H01L43/08 ,  G11C11/16 ,  H01L43/02 ,  H01L43/12

Abstract: A semiconductor device includes a substrate including a memory cell region and a logic region; a variable resistance memory device on the memory cell region; a logic device on the logic region; a first horizontal bit line extending in a horizontal direction on a surface of the substrate on the memory cell region and electrically connected to the variable resistance memory device; a second horizontal bit line extending in a horizontal direction on the surface of the substrate on the logic region and electrically connected to the logic device; and a vertical bit line electrically connected to the first horizontal bit line and the second horizontal bit line and extending perpendicular to the surface of the substrate.

公开(公告)号：US20180350876A1

公开(公告)日：2018-12-06

申请号：US15858349

申请日：2017-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kil-ho Lee ,  Yoon-jong Song ,  Gwan-hyeob Koh

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/02 ,  G11C11/16

CPC classification number: H01L27/228 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A semiconductor device includes a substrate including a memory cell region and a logic region; a variable resistance memory device on the memory cell region; a logic device on the logic region; a first horizontal bit line extending in a horizontal direction on a surface of the substrate on the memory cell region and electrically connected to the variable resistance memory device; a second horizontal bit line extending in a horizontal direction on the surface of the substrate on the logic region and electrically connected to the logic device; and a vertical bit line electrically connected to the first horizontal bit line and the second horizontal bit line and extending perpendicular to the surface of the substrate.

公开(公告)号：US20190252463A1

公开(公告)日：2019-08-15

申请号：US16392969

申请日：2019-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kil-ho Lee ,  Yoon-jong Song ,  Gwan-hyeob Koh

IPC: H01L27/22 ,  H01L43/02 ,  G11C11/16

CPC classification number: H01L27/228 ,  G11C11/161 ,  G11C11/1655 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A semiconductor device includes a substrate including a memory cell region and a logic region; a variable resistance memory device on the memory cell region; a logic device on the logic region; a first horizontal bit line extending in a horizontal direction on a surface of the substrate on the memory cell region and electrically connected to the variable resistance memory device; a second horizontal bit line extending in a horizontal direction on the surface of the substrate on the logic region and electrically connected to the logic device; and a vertical bit line electrically connected to the first horizontal bit line and the second horizontal bit line and extending perpendicular to the surface of the substrate.

公开(公告)号：US10319784B2

公开(公告)日：2019-06-11

申请号：US15858349

申请日：2017-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kil-ho Lee ,  Yoon-jong Song ,  Gwan-hyeob Koh

IPC: H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  G11C11/16 ,  H01L43/12

Abstract: A semiconductor device includes a substrate including a memory cell region and a logic region; a variable resistance memory device on the memory cell region; a logic device on the logic region; a first horizontal bit line extending in a horizontal direction on a surface of the substrate on the memory cell region and electrically connected to the variable resistance memory device; a second horizontal bit line extending in a horizontal direction on the surface of the substrate on the logic region and electrically connected to the logic device; and a vertical bit line electrically connected to the first horizontal bit line and the second horizontal bit line and extending perpendicular to the surface of the substrate.