公开(公告)号：US12002519B2

公开(公告)日：2024-06-04

申请号：US17534989

申请日：2021-11-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjin Yoo ,  Yunjung Lee ,  Heewon Lee ,  Kwangwoo Lee

IPC: G11C16/26 ,  G11C16/34 ,  G11C16/04

CPC classification number: G11C16/26 ,  G11C16/3495 ,  G11C16/0483

Abstract: Disclosed is an operation method of a controller which is configured to control a nonvolatile memory device. The method includes receiving cell counting data associated with selected memory cells included in the nonvolatile memory device from the nonvolatile memory device, adjusting operation parameters of the nonvolatile memory device based on the cell counting data, performing a valley search operation for the selected memory cells based on the adjusted operation parameters, and performing a read operation for the selected memory cells based on a result of the valley search operation.

公开(公告)号：US12242746B2

公开(公告)日：2025-03-04

申请号：US18196788

申请日：2023-05-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjin Yoo ,  Kwangwoo Lee ,  Heewon Lee ,  Byungchan Park ,  Hyojin Ahn ,  Dongcheul Jang

IPC: G06F3/06

Abstract: There is provided a storage device, which includes: a memory device that includes a plurality of memory blocks, and stores first meta data including first status data and a first parameter in a first memory block among the plurality of memory blocks; and a memory controller that stores second meta data including second status data and second parameters, determines final meta data among a plurality of pieces of meta data including the first meta data and the second status data by comparing a plurality of pieces of status data with the first status data and the second status data, performs parameter confirmation for storing the final meta data in the meta block, and controls the memory device based on a parameter stored in the meta block.

公开(公告)号：US20240427498A1

公开(公告)日：2024-12-26

申请号：US18421594

申请日：2024-01-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinwoo Hong ,  Kwangwoo Lee ,  Yunjung Lee

IPC: G06F3/06

Abstract: Provided are a storage device and an operating method of a memory controller. The storage device includes a non-volatile memory that outputs data from selected memory cells based on read voltage information, the read voltage information including a start read voltage, an end read voltage, and a read command. Moreover, the storage device includes a memory controller that determines whether a search region defined by the start read voltage and the end read voltage is within a multi-peak region of a threshold voltage distribution corresponding to a first state of the selected memory cells, based on the search region being within the multi-peak region, change the search region, and based on the search region not being within to the multi-peak region, determine a new read voltage using the search region.

公开(公告)号：US09497338B2

公开(公告)日：2016-11-15

申请号：US14048084

申请日：2013-10-08

Applicant: Samsung Electronics Co., Ltd

Inventor： Kwangwoo Lee ,  Dae-hyun Kim ,  Jin-hyung Kim

IPC: H04N1/00 ,  H04W4/00 ,  H04N1/32 ,  H04W88/06

CPC classification number: H04N1/32117 ,  H04M2250/04 ,  H04N1/00225 ,  H04N1/00307 ,  H04N1/00342 ,  H04N1/00411 ,  H04N1/00474 ,  H04N1/00482 ,  H04N1/00962 ,  H04N1/00973 ,  H04N1/32106 ,  H04N2201/001 ,  H04N2201/006 ,  H04N2201/0094 ,  H04N2201/3205 ,  H04N2201/3212 ,  H04N2201/3223 ,  H04N2201/3278 ,  H04W4/80 ,  H04W88/06

Abstract: An image forming apparatus supporting a near field communication (NFC) function and a method of performing setting an image job by using an NFC device. The method includes tagging an NFC device to receive setting information stored in the NFC device and performing an image job based on the received setting information.

Abstract translation: 一种支持近场通信（NFC）功能的图像形成装置和使用NFC装置执行图像作业的方法。 该方法包括标记NFC设备以接收存储在NFC设备中的设置信息，并且基于接收到的设置信息执行图像作业。

公开(公告)号：US11914892B2

公开(公告)日：2024-02-27

申请号：US17742030

申请日：2022-05-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwangwoo Lee ,  Sangjin Yoo ,  Yeonji Kim ,  Jeongkeun Park ,  Jeongwoo Lee

IPC: G06F3/06

CPC classification number: G06F3/0656 ,  G06F3/0604 ,  G06F3/0679

Abstract: A storage device includes a non-volatile memory including memory blocks, and a storage controller including a history buffer including plural history read level storage areas corresponding to the memory blocks. The storage controller dynamically adjusts a number of the history read level storage areas allocated to one or more of the plurality of memory blocks based on reliabilities of the memory blocks during runtime of the storage device. The storage controller increases a number of history read level storage areas allocated to a first memory block among the memory blocks that has a relatively low reliability with respect to the reliabilities of remaining ones of the memory blocks.

公开(公告)号：US11862261B2

公开(公告)日：2024-01-02

申请号：US17393797

申请日：2021-08-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangwoo Lee ,  Chanha Kim ,  Heewon Lee

IPC: G11C16/34 ,  G11C16/26 ,  G11C16/10

CPC classification number: G11C16/3495 ,  G11C16/102 ,  G11C16/26 ,  G11C16/3404

Abstract: In a method of writing data in a nonvolatile memory device, a write command, a write address and write data to be programmed are received. Offset information representing a verification level is received. The offset information is provided when the write data corresponds to a distribution deterioration pattern by checking an input/output (I/O) pattern of the write data. When the offset information is received, the write data is programmed based on the offset information such that at least one state among a plurality of states included in a distribution of threshold voltages of memory cells in which the write data is stored is changed.

公开(公告)号：US20230066982A1

公开(公告)日：2023-03-02

申请号：US17742030

申请日：2022-05-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwangwoo Lee ,  Sangjin Yoo ,  Yeonji Kim ,  Jeongkeun Park ,  Jeongwoo Lee

IPC: G06F3/06

Abstract: A storage device includes a non-volatile memory including memory blocks, and a storage controller including a history buffer including plural history read level storage areas corresponding to the memory blocks. The storage controller dynamically adjusts a number of the history read level storage areas allocated to one or more of the plurality of memory blocks based on reliabilities of the memory blocks during runtime of the storage device. The storage controller increases a number of history read level storage areas allocated to a first memory block among the memory blocks that has a relatively low reliability with respect to the reliabilities of remaining ones of the memory blocks.

公开(公告)号：US11508451B2

公开(公告)日：2022-11-22

申请号：US16996266

申请日：2020-08-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwangwoo Lee ,  Jinwoo Hong ,  Yunjung Lee

IPC: G11C16/34 ,  G11C16/08 ,  G11C16/16 ,  G06F12/0891 ,  G11C16/28 ,  G06N20/00 ,  G06F12/02 ,  G11C16/30

Abstract: A storage device includes a nonvolatile memory device that includes a first storage area and a second storage area. A controller of the storage device controls the nonvolatile memory device and performs a read reclaim operation of reading data stored in the first storage area of the nonvolatile memory device and writing the read data in the second storage area. In the read reclaim operation, the controller is further configured to allow the nonvolatile memory device to perform sample read operations on the first storage area and to determine locations of the second storage area, at which the data are to be written, based on results of the sample read operations.

公开(公告)号：US10802728B2

公开(公告)日：2020-10-13

申请号：US16416750

申请日：2019-05-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwangwoo Lee ,  Chanha Kim ,  Yunjung Lee ,  Jisoo Kim ,  Seungkyung Ro ,  Jinwook Lee ,  Heewon Lee

IPC: G06F3/06 ,  G06N20/00 ,  G06F11/10 ,  G11C16/04 ,  G11C16/26 ,  G11C29/52

Abstract: A storage device includes a nonvolatile memory device including a plurality of memory blocks, each including a plurality of memory cells connected to a plurality of word lines, and a controller configured to perform a first read operation on memory cells connected to a selected word line included in a selected memory block based on a request of an external host device. The controller is further configured to perform a check read operation that checks a reliability of the memory cells of the selected memory block after performing the first read operation. In the check read operation, the controller is further configured to select and perform one of an actual check and a machine learning-based check.

公开(公告)号：US20250104784A1

公开(公告)日：2025-03-27

申请号：US18762272

申请日：2024-07-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JunHo KIM ,  Sangjin Yoo ,  Kwangwoo Lee ,  Jeongwoo Lee ,  Heewon Lee

IPC: G11C16/34 ,  G11C16/26 ,  G11C29/52

Abstract: A data recover read (DRR) operation method of a nonvolatile memory system includes: performing a first read operation on adjacent memory cells, which are connected to an adjacent wordline adjacent to a target wordline, based on a first specific read level; obtaining a cell count value for the adjacent wordline; determining offset values for a normal read level of target memory cells, which are connected to the target wordline, based on the cell count value for the adjacent wordline; and performing a second read operation on the target memory cells, based on the determined offset values and a result of the first read operation.