公开(公告)号：US20240136398A1

公开(公告)日：2024-04-25

申请号：US18323715

申请日：2023-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junmo PARK ,  Wookhyun KWON ,  Yeonho PARK ,  Jongmin SHIN ,  Heonjong SHIN ,  Jongmin JUN ,  Kyubong CHOI

IPC: H01L29/06 ,  H01L29/24 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/0673 ,  H01L29/24 ,  H01L29/42364 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor device may include a substrate including an active pattern, a channel pattern on the active pattern, a source/drain pattern, a gate electrode, and an insulation pattern. The channel pattern may include semiconductor patterns that are spaced apart from each other and vertically stacked. A lowermost one of the semiconductor patterns may be a first semiconductor pattern. The source/drain pattern may be connected to the semiconductor patterns. The gate electrode may be on the semiconductor patterns and may include a plurality of inner electrodes below the semiconductor patterns except the first semiconductor pattern. The insulation pattern may be between the first semiconductor pattern and the active pattern. The insulation pattern may include a dielectric pattern and a protection layer. The protection layer may be between the dielectric pattern and the first semiconductor pattern. The protection layer may be between the dielectric pattern and the active pattern.

公开(公告)号：US20230014468A1

公开(公告)日：2023-01-19

申请号：US17691293

申请日：2022-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junmo PARK ,  Yeonho PARK ,  Kyubong CHOI ,  Eunsil PARK ,  Junseok LEE ,  Jinseok LEE

IPC: H01L27/088 ,  H01L21/8234 ,  H01L21/762

Abstract: A semiconductor device includes a substrate including a first active fin and a second active fin respectively extending in a first direction, the substrate having a recess between the first and second active fins, a device isolation film on the substrate, first and second gate structures on the first and second active fins, respectively, and extending in a second direction, and a field separation layer having a first portion between the first and second active fin and in the recess, and a second portion extending from both sides of the first portion in the second direction to an upper surface of the device isolation film. The recess has a bottom surface lower in a third direction intersecting the first direction and the second direction than the upper surface of the device isolation film, and a region of the upper surface of the device isolation film has a flat surface.

公开(公告)号：US20240234502A9

公开(公告)日：2024-07-11

申请号：US18323715

申请日：2023-05-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junmo PARK ,  Wookhyun KWON ,  Yeonho PARK ,  Jongmin SHIN ,  Heonjong SHIN ,  Jongmin JUN ,  Kyubong CHOI

IPC: H01L29/06 ,  H01L29/24 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/0673 ,  H01L29/24 ,  H01L29/42364 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor device may include a substrate including an active pattern, a channel pattern on the active pattern, a source/drain pattern, a gate electrode, and an insulation pattern. The channel pattern may include semiconductor patterns that are spaced apart from each other and vertically stacked. A lowermost one of the semiconductor patterns may be a first semiconductor pattern. The source/drain pattern may be connected to the semiconductor patterns. The gate electrode may be on the semiconductor patterns and may include a plurality of inner electrodes below the semiconductor patterns except the first semiconductor pattern. The insulation pattern may be between the first semiconductor pattern and the active pattern. The insulation pattern may include a dielectric pattern and a protection layer. The protection layer may be between the dielectric pattern and the first semiconductor pattern. The protection layer may be between the dielectric pattern and the active pattern.

公开(公告)号：US20240274679A1

公开(公告)日：2024-08-15

申请号：US18435168

申请日：2024-02-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongmin SHIN ,  Junmo PARK ,  Kyubong CHOI

IPC: H01L29/417 ,  H01L27/12 ,  H01L29/423 ,  H01L29/45 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/41733 ,  H01L27/124 ,  H01L27/1266 ,  H01L29/458 ,  H01L29/775 ,  H01L29/78696 ,  H01L29/42392

Abstract: An integrated circuit device may include a fin-type active structure elongated in a first horizontal direction, a nanosheet stack including nanosheets on the fin-type active structure, a gate structure extending between the nanosheets, a source/drain structure on the fin-type active structure at a position adjacent to the gate structure and facing the nanosheet stack in the first horizontal direction, a vertical separation layer including a silicon layer in contact with a silicide separation layer. The silicide separation layer may be between the source/drain structure and each of the nanosheet stack and the gate structure. The silicon separation layer may be between the silicide separation layer and each of the nanosheet stack and the gate structure. The source/drain structure may include a metal. The gate structure may include at least one sub-gate surrounding at least one nanosheet among the plurality of nanosheets on the fin-type active structure.

公开(公告)号：US20230066341A1

公开(公告)日：2023-03-02

申请号：US17704185

申请日：2022-03-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junmo PARK ,  Yeonho PARK ,  Wangseop LIM ,  Kyubong CHOI

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/51

Abstract: A semiconductor device includes a substrate including first and second active regions, first and second active patterns on the first and second active regions, and a gate electrode crossing the first and second active patterns. The gate electrode may include first and second electrode portions on the first and second active regions. The first electrode portion may include a first metal pattern and a second metal pattern on the first metal pattern. The second electrode portion may include a third metal pattern and a fourth metal pattern on the third metal pattern. The first metal pattern may include a first line portion and a first vertical portion extended from the first line portion, and the third metal pattern may include a second line portion and a second vertical portion extended from the second line portion. The first and second vertical portions may be in contact with each other.