公开(公告)号：US10096476B2

公开(公告)日：2018-10-09

申请号：US15682852

申请日：2017-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Park ,  Hyun-woo Kim ,  Myeong-koo Kim

IPC: H01L21/311 ,  H01L21/033 ,  H01L21/027 ,  G03F7/11 ,  C09D179/08

Abstract: A composition for manufacturing a semiconductor device includes at least one carbon-based compound that includes at least one of an alkyne group and an azide group, and a solvent. A method of manufacturing a semiconductor device includes forming a feature layer on a substrate, coating the feature layer with a composition including alkyne and azide, forming a carbon-containing layer including a triazole compound by performing a heat treatment on the coated composition, forming a photoresist film on the carbon-containing layer, forming photoresist patterns by exposing and developing the photoresist film, and patterning the carbon-containing layer and the feature layer using the photoresist patterns.

公开(公告)号：US09773673B2

公开(公告)日：2017-09-26

申请号：US15148622

申请日：2016-05-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Park ,  Hyun-woo Kim ,  Myeong-koo Kim

IPC: H01L51/00 ,  H01L21/033 ,  G03F7/11 ,  C09D179/08 ,  H01L21/027

CPC classification number: H01L21/0337 ,  C08G73/08 ,  C08G73/1042 ,  C08G73/1067 ,  C09D179/08 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  H01L21/0276 ,  H01L21/0332

Abstract: A composition for manufacturing a semiconductor device includes at least one carbon-based compound that includes at least one of an alkyne group and an azide group, and a solvent. A method of manufacturing a semiconductor device includes forming a feature layer on a substrate, coating the feature layer with a composition including alkyne and azide, forming a carbon-containing layer including a triazole compound by performing a heat treatment on the coated composition, forming a photoresist film on the carbon-containing layer, forming photoresist patterns by exposing and developing the photoresist film, and patterning the carbon-containing layer and the feature layer using the photoresist patterns.