公开(公告)号：US20250107282A1

公开(公告)日：2025-03-27

申请号：US18897838

申请日：2024-09-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nakhyun Kim ,  Junhee Choi ,  Joohun Han

IPC: H01L33/20 ,  H01L25/16 ,  H01L33/00 ,  H01L33/32 ,  H01L33/50

Abstract: A nanorod light-emitting device includes an n-type semiconductor layer, an active layer on the n-type semiconductor layer, and a p-type semiconductor layer on the active layer, and the n-type semiconductor layer includes a core rod, a plurality of nano pores opened in an outward direction from the core rod, and a plurality of quantum dots dispersed in the plurality of nano pores.

公开(公告)号：US12249671B2

公开(公告)日：2025-03-11

申请号：US17582172

申请日：2022-01-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Nakhyun Kim ,  Joosung Kim ,  Eunsung Lee ,  Joohun Han ,  Kiho Kong ,  Junghun Park

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/20 ,  H01L33/44 ,  H01L25/075

Abstract: Provided is a substrate structure including a substrate, a buffer layer disposed on the substrate, a porous semiconductor layer disposed on the buffer layer, the porous semiconductor layer having a plurality of voids, a plurality of semiconductor light emitting structures disposed on the porous semiconductor layer, the plurality of semiconductor light emitting structures having a nanorod shape extending vertically, and a passivation film disposed on a side wall of each of the plurality of semiconductor light emitting structures, the passivation film having an insulation property.

公开(公告)号：US12034032B2

公开(公告)日：2024-07-09

申请号：US18308895

申请日：2023-04-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joohun Han ,  Junhee Choi ,  Kiho Kong ,  Jinjoo Park ,  Nakhyun Kim ,  Junghun Park

IPC: H01L33/00 ,  H01L27/15

CPC classification number: H01L27/156 ,  H01L33/0093 ,  H01L33/0095 ,  H01L33/007

Abstract: A micro light emitting diode (LED) device and a method of manufacturing the same are provided. A micro LED device includes a light emitting layer that is provided on a support substrate, a bonding layer, and a driver layer. The light emitting layer includes a stacked structure including a first semiconductor layer, an active layer, and a second semiconductor layer; first and second electrodes provided on a first side and a second side of the stacked structure; and a plurality of light emitting regions. The bonding layer is positioned between the support substrate and the light emitting layer. The drive layer includes a drive element electrically connected to the light emitting layer and is positioned on the light emitting layer to apply power to the plurality of light emitting regions of the light emitting layer.

公开(公告)号：US11776988B2

公开(公告)日：2023-10-03

申请号：US17227981

申请日：2021-04-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Kiho Kong ,  Nakhyun Kim ,  Dongho Kim ,  Junghun Park ,  Jinjoo Park ,  Eunsung Lee ,  Joohun Han

IPC: H01L27/15

CPC classification number: H01L27/156

Abstract: A micro light-emitting display apparatus and a method of manufacturing the same are disclosed The micro light-emitting display apparatus includes a first semiconductor layer, an isolation structure provided on the first semiconductor layer and configured to define a plurality of sub-pixels each configured to emit light, a first light-emitting unit including a first active layer provided in a first sub-pixel among the plurality of sub-pixels, and a second semiconductor layer provided on the first active layer, and a second light-emitting unit including a rod semiconductor layer provided in a second sub-pixel among the plurality of sub-pixels, a second active layer provided on the rod semiconductor layer, and a third semiconductor layer provided on the second active layer. The first active layer is configured to emit blue light and the second active layer is configured to emit green light.

公开(公告)号：US11688827B2

公开(公告)日：2023-06-27

申请号：US17106515

申请日：2020-11-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nakhyun Kim ,  Junhee Choi ,  Jinjoo Park ,  Joohun Han

IPC: H01L33/24 ,  H01L25/16 ,  H01L29/06 ,  H01L33/32 ,  H01L25/075 ,  H01L33/44

CPC classification number: H01L33/24 ,  H01L25/0753 ,  H01L25/167 ,  H01L29/0676 ,  H01L33/32 ,  H01L33/44

Abstract: A nanorod semiconductor layer having a flat upper surface, a micro-LED including the nanorod semiconductor layer, a pixel plate including the micro-LED, a display device including the pixel plate, and an electronic device including the pixel plate are provided. The nanorod semiconductor layer includes: a main body; and an upper end formed from the main body, wherein the upper end includes: a first inclined surface; a second inclined surface facing the first inclined surface; and a flat upper surface between the first inclined surface and the second inclined surface, and a width of the upper end becomes narrower in an upward direction, and when a length of the upper end protruded from the main body (a thickness of the upper end) is L1, an inclination angle between a surface extending parallel to a surface selected from the first and second inclined surfaces and the flat upper surface is β, and a width of the main body is D, a width D1 of the flat upper surface satisfies Equation 1.

D1=D−(2×L1×tan β)  

公开(公告)号：US20210399173A1

公开(公告)日：2021-12-23

申请号：US17112346

申请日：2020-12-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee CHOI ,  Nakhyun Kim ,  Jinjoo Park ,  Joohun Han

IPC: H01L33/24 ,  H01L33/06 ,  H01L33/14 ,  H01L33/30 ,  H01L33/40 ,  H01L33/00 ,  H01L27/15

Abstract: Provided is a nanorod light-emitting device including a first semiconductor layer doped with a first conductive type impurity, an emission layer disposed above the first semiconductor layer, a second semiconductor layer disposed above the emission layer and doped with a second conductive type impurity that is electrically opposite to the first conductive type impurity, a conductive layer disposed between at least one of a center portion of a lower surface of the emission layer and the first semiconductor layer and a center portion of an upper surface of the emission layer and the second semiconductor layer, and a current blocking layer surrounding a sidewall of the conductive layer.

公开(公告)号：US20250169244A1

公开(公告)日：2025-05-22

申请号：US18955332

申请日：2024-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joohun HAN ,  Joosung Kim ,  Junhee Choi ,  Nakhyun Kim ,  Eunsung Lee

IPC: H01L33/44 ,  H01L25/075 ,  H01L25/16 ,  H01L33/00 ,  H01L33/62

Abstract: A semiconductor light-emitting device includes: a light-emitting stack structure including a first semiconductor layer, an active layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the active layer; and a first passivation layer disposed on a side surface of the light-emitting stack structure.

公开(公告)号：US12237365B2

公开(公告)日：2025-02-25

申请号：US18456069

申请日：2023-08-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Kiho Kong ,  Nakhyun Kim ,  Dongho Kim ,  Junghun Park ,  Jinjoo Park ,  Eunsung Lee ,  Joohun Han

IPC: H01L27/15

Abstract: A micro light-emitting display apparatus and a method of manufacturing the same are disclosed The micro light-emitting display apparatus includes a first semiconductor layer, an isolation structure provided on the first semiconductor layer and configured to define a plurality of sub-pixels each configured to emit light, a first light-emitting unit including a first active layer provided in a first sub-pixel among the plurality of sub-pixels, and a second semiconductor layer provided on the first active layer, and a second light-emitting unit including a rod semiconductor layer provided in a second sub-pixel among the plurality of sub-pixels, a second active layer provided on the rod semiconductor layer, and a third semiconductor layer provided on the second active layer. The first active layer is configured to emit blue light and the second active layer is configured to emit green light.

公开(公告)号：US12095005B2

公开(公告)日：2024-09-17

申请号：US18200399

申请日：2023-05-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nakhyun Kim ,  Junhee Choi ,  Jinjoo Park ,  Joohun Han

IPC: H01L33/24 ,  H01L25/075 ,  H01L25/16 ,  H01L29/06 ,  H01L33/32 ,  H01L33/44

CPC classification number: H01L33/24 ,  H01L25/0753 ,  H01L25/167 ,  H01L29/0676 ,  H01L33/32 ,  H01L33/44

Abstract: A nanorod semiconductor layer having a flat upper surface, a micro-LED including the nanorod semiconductor layer, a pixel plate including the micro-LED , a display device including the pixel plate, and an electronic device including the pixel plate are provided. The nanorod semiconductor layer includes: a main body; and an upper end formed from the main body, wherein the upper end includes: a first inclined surface; a second inclined surface facing the first inclined surface; and a flat upper surface between the first inclined surface and the second inclined surface, and a width of the upper end becomes narrower in an upward direction, and when a length of the upper end protruded from the main body (a thickness of the upper end) is L1, an inclination angle between a surface extending parallel to a surface selected from the first and second inclined surfaces and the flat upper surface is β, and a width of the main body is D, a width D1 of the flat upper surface satisfies Equation 1.

D1=D−(2×L1×tanβ)   

公开(公告)号：US11777056B2

公开(公告)日：2023-10-03

申请号：US17112346

申请日：2020-12-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Nakhyun Kim ,  Jinjoo Park ,  Joohun Han

IPC: H01L33/06 ,  H01L33/24 ,  H01L27/15 ,  H01L33/00 ,  H01L33/14 ,  H01L33/30 ,  H01L33/40

CPC classification number: H01L33/24 ,  H01L27/156 ,  H01L33/0025 ,  H01L33/0062 ,  H01L33/06 ,  H01L33/145 ,  H01L33/30 ,  H01L33/40

Abstract: Provided is a nanorod light-emitting device including a first semiconductor layer doped with a first conductive type impurity, an emission layer disposed above the first semiconductor layer, a second semiconductor layer disposed above the emission layer and doped with a second conductive type impurity that is electrically opposite to the first conductive type impurity, a conductive layer disposed between at least one of a center portion of a lower surface of the emission layer and the first semiconductor layer and a center portion of an upper surface of the emission layer and the second semiconductor layer, and a current blocking layer surrounding a sidewall of the conductive layer.